Temperature control system for semiconductor process chamber
First Claim
1. An apparatus capable of processing a substrate, the apparatus comprising:
- (a) a process chamber having an external surface, the chamber comprising a support capable of holding the substrate in the chamber, a gas distributor capable of distributing process gas in the chamber, a plasma generator capable of forming a plasma from the process gas capable of processing the substrate, and an exhaust capable of exhausting spent process gas from the chamber; and
(b) a vapor chamber surrounding the external surface of the process chamber, the vapor chamber comprising a fluid distributor adapted to apply a fluid film over the external surface of the process chamber to control the temperature of the external surface.
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Accused Products
Abstract
A temperature control system 10 is used to control the temperature of a chamber surface 15, such as a convoluted external surface, of a process chamber 25 that is used to process a semiconductor substrate 30. The temperature control system 10 comprises a vapor chamber 100 that forms an enclosure adjoining or surrounding the process chamber surface 15. A fluid distributor 115 in the vapor chamber 100 applies a fluid film 130 onto the process chamber surface 15. Vaporization of the fluid film 130 from the chamber surface 15 controls the temperature of the chamber surface. Optionally, a vent 165 in the vapor chamber 100 can be used to adjust the vaporization temperature of the fluid in the vapor chamber.
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Citations
13 Claims
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1. An apparatus capable of processing a substrate, the apparatus comprising:
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(a) a process chamber having an external surface, the chamber comprising a support capable of holding the substrate in the chamber, a gas distributor capable of distributing process gas in the chamber, a plasma generator capable of forming a plasma from the process gas capable of processing the substrate, and an exhaust capable of exhausting spent process gas from the chamber; and (b) a vapor chamber surrounding the external surface of the process chamber, the vapor chamber comprising a fluid distributor adapted to apply a fluid film over the external surface of the process chamber to control the temperature of the external surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9)
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8. The plasma processing apparatus capable of processing a substrate in a plasma, the apparatus comprising:
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(a) a process chamber having an inductor antenna abutting a dielectric wall; and (b) a vapor chamber adapted to contain a vapor, the vapor chamber adjoining the dielectric wall, and the vapor chamber comprising a fluid distributor adapted to apply a fluid film on the dielectric wall. - View Dependent Claims (10, 11, 12, 13)
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Specification