Temperature control system for semiconductor process chamber

• US 6,015,465 A
• Filed: 04/08/1998
• Issued: 01/18/2000
• Est. Priority Date: 04/08/1998
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Quiles, Efrain, Shendon, Maya, Kholodenko, Arnold, Lee, Ke Ling
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): Lee, Paul J.
• Application Number:
  US09/057,097
• Time in Patent Office: 650 Days
• Field of Search: 118/712, 118/715, 118/723 I, 118/723 IR, 118/723 AN, 118/663, 118/666, 118/692, 118/64, 118/719 E, 156/345 MT, 156/345 P, 156/345 C, 204/298.25, 204/298.35
• US Class Current: 118/719
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01L 21/67023 for general liquid treatment, e.g. etching followed by cleaning
• CPC Class Codes: H01L 21/67248 Temperature monitoring

Abstract

A temperature control system 10 is used to control the temperature of a chamber surface 15, such as a convoluted external surface, of a process chamber 25 that is used to process a semiconductor substrate 30. The temperature control system 10 comprises a vapor chamber 100 that forms an enclosure adjoining or surrounding the process chamber surface 15. A fluid distributor 115 in the vapor chamber 100 applies a fluid film 130 onto the process chamber surface 15. Vaporization of the fluid film 130 from the chamber surface 15 controls the temperature of the chamber surface. Optionally, a vent 165 in the vapor chamber 100 can be used to adjust the vaporization temperature of the fluid in the vapor chamber.

Claims

1. An apparatus capable of processing a substrate, the apparatus comprising:

(a) a process chamber having an external surface, the chamber comprising a support capable of holding the substrate in the chamber, a gas distributor capable of distributing process gas in the chamber, a plasma generator capable of forming a plasma from the process gas capable of processing the substrate, and an exhaust capable of exhausting spent process gas from the chamber; and

(b) a vapor chamber surrounding the external surface of the process chamber, the vapor chamber comprising a fluid distributor adapted to apply a fluid film over the external surface of the process chamber to control the temperature of the external surface.

2. The apparatus of claim 1 wherein the fluid distributor comprises one or more nozzles capable of applying a substantially continuous fluid film over at least a portion of the external surface.

3. The apparatus of claim 1 further comprising:

(1) a pressure sensor capable of measuring a vapor pressure in the vapor chamber and generating a pressure signal; and

(2) a temperature regulator capable of regulating the temperature of the fluid in relation to the pressure signal, prior to application of the fluid film on the external surface.

4. The apparatus of claim 1 wherein the vapor chamber further comprises a vent capable of venting vapor to adjust the vaporization temperature of the fluid applied on the external surface.

5. The apparatus of claim 1 wherein the vapor chamber further comprises:

(i) a condenser capable of condensing the vapor in the vapor chamber to form condensate at a location other than the external surface;

(ii) a reservoir capable of collecting the condensate; and

(iii) a pump capable of pumping the condensate from the reservoir to the fluid distributor.

6. The apparatus of claim 1 wherein the external surface comprises a dielectric material.

7. The apparatus of claim 1 wherein the process chamber comprises one of an etching chamber, chemical vapor deposition chamber, physical vapor deposition chamber, or evaporator chamber.

9. The plasma processing apparatus of claim 1 wherein the dielectric wall comprises a ceiling.

8. The plasma processing apparatus capable of processing a substrate in a plasma, the apparatus comprising:

(a) a process chamber having an inductor antenna abutting a dielectric wall; and

(b) a vapor chamber adapted to contain a vapor, the vapor chamber adjoining the dielectric wall, and the vapor chamber comprising a fluid distributor adapted to apply a fluid film on the dielectric wall.

10. The plasma processing apparatus of claim 8 wherein the fluid distributor comprises one or more nozzles capable of applying a substantially continuous fluid film over at least a portion of the dielectric wall.

11. The plasma processing apparatus of claim 8 further comprising:

(1) a pressure sensor capable of measuring a vapor pressure in the vapor chamber and generating a pressure signal; and

(2) a temperature regulator capable of regulating the temperature of a fluid in relation to the pressure signal, prior to applying the fluid as the fluid film on the dielectric wall.

12. The plasma processing apparatus of claim 8 wherein the vapor chamber further comprises a vent capable of venting a vapor in the vapor chamber.

13. The plasma processing apparatus of claim 8 wherein the vapor chamber further comprises:

(i) a condenser capable of condensing the vapor in the vapor chamber to form condensate at a location other than the dielectric wall.

(ii) a reservoir capable of collecting the condensate; and

(iii) a pump capable of pumping the condensate from the reservoir to the fluid distributor.