×

Temperature control system for semiconductor process chamber

  • US 6,015,465 A
  • Filed: 04/08/1998
  • Issued: 01/18/2000
  • Est. Priority Date: 04/08/1998
  • Status: Expired due to Fees
First Claim
Patent Images

1. An apparatus capable of processing a substrate, the apparatus comprising:

  • (a) a process chamber having an external surface, the chamber comprising a support capable of holding the substrate in the chamber, a gas distributor capable of distributing process gas in the chamber, a plasma generator capable of forming a plasma from the process gas capable of processing the substrate, and an exhaust capable of exhausting spent process gas from the chamber; and

    (b) a vapor chamber surrounding the external surface of the process chamber, the vapor chamber comprising a fluid distributor adapted to apply a fluid film over the external surface of the process chamber to control the temperature of the external surface.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×