Production method of a vertical type MOSFET

• US 6,015,737 A
• Filed: 08/15/1995
• Issued: 01/18/2000
• Est. Priority Date: 07/26/1991
• Status: Expired due to Term

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Yamamoto, Tsuyoshi, Tokura, Norihito, Takahashi, Shigeki, Kataoka, Mitsuhiro
• Primary Examiner(s): Trinh, Michael
• Application Number:
  US08/515,176
• Time in Patent Office: 1,617 Days
• Field of Search: 437/40 DM, 437/41 DM, 437/29, 437/68, 437/913, 148/DIG. 115, 148/DIG. 126, 438/270, 438/271, 438/444, 438/589, 438/268, 438/138
• US Class Current: 438/270
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A vertical type power MOSFET remarkably reduces its ON-resistance per area. A substantial groove formation in which a gate structure is constituted is performed beforehand utilizing the LOCOS method before the formation of a p-type base layer and an n⁺ -type source layer. The p-type base layer and the n⁺ -type source layer are then formed by double diffusion in a manner of self-alignment with respect to a LOCOS oxide film, simultaneously with which channels are set at sidewall portions of the LOCOS oxide film. Thereafter the LOCOS oxide film is removed to provide a U-groove so as to constitute the gate structure. Namely, the channels are set by the double diffusion of the manner of self-alignment with respect to the LOCOS oxide film, so that the channels, which are set at the sidewall portions at both sides of the groove, provide a structure of exact bilateral symmetry, there is no positional deviation of the U-groove with respect to the base layer end, and the length of the bottom face of the U-groove can be made minimally short. Therefore, the unit cell size is greatly reduced, and the ON-resistance per area is greatly decreased.

Claims

1. A production method of a vertical type MOSFET comprising steps of:

preparing a semiconductor substrate;

forming a semiconductor layer of a first conductivity type at one main face side of said semiconductor substrate, said semiconductor layer having an impurity concentration lower than that of said semiconductor substrate and having a main surface oriented in a first crystal orientation;

local oxidizing a region of said main surface of said semiconductor layer to form a local oxide film eroding said main surface of said semiconductor layer by a depth in said region, wherein a condition of said step of local oxidizing is adjusted such that said local oxide film contacts inclined surfaces of said semiconductor layer by side surfaces thereof and all of said inclined surfaces contacting said side surfaces of said local oxide film are oriented in the same crystal orientation of a second crystal orientation;

forming channels on said respective inclined surfaces of said semiconductor layer each contacting said side surface of said local oxide film by doubly-diffusing impurities of a second conductivity type and the first conductivity type from said main surface successively in a manner of self-alignment with respect to said local oxide film, whereby a length of each of said channels is determined by the double diffusion and a base layer of the second conductivity type and a source layer of the first conductivity type are formed with respect to each of said inclined surfaces of said semiconductor layer;

removing said local oxide film after the double diffusion to form a groove structure having said depth, whereby said inclined surfaces each oriented in said second crystal orientation is exposed in an inner wall of said groove structure;

oxidizing said inner wall of said groove structure including a portion to become said channel to provide a gate oxide film;

forming a gate electrode on said gate oxide film;

forming a source electrode electrically connecting to both said source layer and said base layer; and

forming a drain electrode electrically connecting to another main face side of said semiconductor substrate.

2. A production method of a vertical type MOSFET according to claim 1, wherein said step of forming a semiconductor layer includes forming a silicon layer, said first crystal orientation of which is (1 1 1).

3. A production method of a vertical type MOSFET according to claim 2, wherein said step of local oxidizing includes adjusting said condition such that said second crystal orientation is (1 0 0).

4. A production method of a vertical type MOSFET according to claim 3, wherein said step of local oxidizing includes making a surface pattern shape of said local oxide film an equilateral triangle shape such that one side of said equilateral triangle shape is along a <

2 1 1>

crystal axis.

5. A production method of a vertical type MOSFET according to claim 1, wherein said step of local oxidizing includes steps of:

forming an oxidation resistant mask on said main surface of said semiconductor layer;

patterning said oxidation resistant mask to have an opening pattern, an opening side of which is set to be along a particular crystal axis in association with said opening pattern; and

oxidizing an exposed surface of said semiconductor layer to form said local oxide film having a shape corresponding to said opening pattern of said oxidation resistant mask, whereby said exposed surface is eroded by said local oxide film and said inclined surfaces each oriented in said second crystal orientation are formed.

6. A production method of a vertical type MOSFET according to claim 5, wherein said local oxide film has said side surfaces which makes said inclined surfaces of said semiconductor layer inclined at a particular angle with respect to said main surface of said semiconductor layer.

7. A production method of a vertical type MOSFET according to claim 6, wherein said step of forming a semiconductor layer includes forming a silicon layer, said first crystal orientation of which is (1 1 1).

8. A production method of a vertical type MOSFET according to claim 7, wherein said opening side of said opening pattern of said oxidation resistant mask is set to be along said particular crystal axis of <

2 1 1>

, and said particular angle of said inclined surface of said semiconductor layer to said main surface of said semiconductor layer is controlled to be 54.7°

, thereby adjusting said second crystal orientation to (1 0

     0).

9. A production method of a vertical type MOSFET according to claim 1, wherein said step of local oxidizing includes steps of:

forming an oxidation resistant mask on said main surface of said semiconductor layer;

patterning said oxidation resistant mask to have an opening pattern, an opening side of which is set to be along a particular crystal axis in association with said opening pattern;

etching said semiconductor layer to form an initial groove in said main surface of said semiconductor layer using said patterned oxidation resistant mask as a mask; and

oxidizing an etched surface of said semiconductor layer to form said local oxide film having a shape corresponding to said opening pattern of said oxidation resistant mask, whereby said etched surface is eroded by said local oxide film and said inclined surfaces each oriented in said second crystal orientation are formed.

10. A production method of a vertical type MOSFET according to claim 9, wherein said local oxide film has said side surfaces which makes said inclined surfaces of said semiconductor layer inclined at a particular angle with respect to said main surface of said semiconductor layer.

11. A production method of a vertical type MOSFET according to claim 10, wherein said step of forming a semiconductor layer includes forming a silicon layer, said first crystal orientation of which is (1 1 1).

12. A production method of a vertical type MOSFET according to claim 11, wherein said opening side of said opening pattern of said oxidation resistant mask is set to be along said particular crystal axis of <

2 1 1>

, and said particular angle of said inclined surface of said semiconductor layer to said main surface of said semiconductor layer is controlled to be 54.7°

, thereby adjusting said second crystal orientation to (1 0

     0).

13. A production method of a vertical type MOSFET according to claim 1, wherein said step of local oxidizing includes adjusting said condition, said adjusting said condition including:

optimizing a surface pattern shape of said local oxide film in correspondence with said first crystal orientation;

determining a direction of a side of said surface pattern shape of said local oxide film with respect to said first crystal orientation of said main surface of said semiconductor layer; and

optimizing an inclination angle of said side surface of said local oxide film with respect to said main surface of said semiconductor layer.

14. A production method of a vertical type MOSFET according to claim 13, further comprising a step of etching said semiconductor layer to form an initial groove in said main surface of said semiconductor layer prior to said step of local oxidizing.

15. A production method of a vertical type MOSFET comprising steps of:

preparing a semiconductor substrate having a first concentration of an impurity;

forming a semiconductor layer on a first face of said semiconductor substrate, said semiconductor layer having a surface oriented in a (1 1

     1) crystal plane, having a first conductivity type, and having a second concentration of an impurity lower than said first concentration of an impurity;

forming a local oxide film on a region of said semiconductor layer, said local oxide film eroding said semiconductor layer at said region and contacting said semiconductor layer at a plurality of surfaces each oriented in a (1 0

     0) crystal plane;

forming a base layer by diffusing impurities of a second conductivity type in said semiconductor layer in a manner of self-alignment with respect to said local oxide film;

forming a source layer by diffusing impurities of said first conductivity type in said semiconductor layer in a manner of self-alignment with respect to said local oxide film;

forming a groove structure including a channel by removing said local oxide film;

forming a gate oxide film by oxidizing an inner wall of said groove;

forming a gate electrode on said gate oxide film;

forming a source electrode in electrical contact with said source layer and said base layer; and

forming a drain electrode in electrical contact with a second face of said semiconductor substrate.

16. A production method of a vertical type MOSFET according to claim 15, wherein said step of preparing said semiconductor substrate includes selecting said semiconductor substrate of said first conductivity type.

17. A production method of a vertical type MOSFET according to claim 15, further comprising a step of etching said semiconductor layer to form an initial groove in said surface of said semiconductor layer prior to said step of forming said local oxide film.

18. A production method of a vertical type MOSFET according to claim 15, wherein said step of forming a local oxide film includes making a surface pattern shape of said local oxide film an equilateral triangle shape such that one side of said equilateral triangle shape is along a <

2 1 1>

crystal axis.

19. A production method of a vertical type MOSFET comprising steps of:

forming a mask having an opening part within a region on a main surface of a first conductivity type semiconductor layer disposed on a semiconductor substrate;

forming on said semiconductor layer a first groove having an inlet part wider than said opening part of said mask, a bottom part roughly parallel to said main surface of said semiconductor layer and a plurality of side parts connecting to said inlet part and said bottom part by applying etching to said semiconductor layer through said opening part of said mask;

forming a local oxide film to a specified thickness from said main surface within said semiconductor layer within said region by local oxidizing a region including said first groove, whereby a plurality of inclined surfaces of said semiconductor layer contacting side surfaces of said local oxide film are formed so as to be in correspondence with said plurality of side parts of said first groove and all of said inclined surfaces of said semiconductor layer are oriented in the same crystal orientation;

forming a second conductivity type base layer within said semiconductor layer by introducing second conductivity type impurities from said main surface so as to include said inclined surfaces of said semiconductor layer,

forming a first conductivity type source layer within said base layer by introducing first conductivity type impurities from said main surface, whereby channel regions are defined on said respective inclined surfaces;

forming a second groove to a depth which is deeper than a depth of said first groove by removing said local oxide film; and

forming a gate electrode at least on a side surface of said second groove corresponding to each of said inclined surfaces between said source layer and said semiconductor layer with a gate insulating film interposed therebetween, forming a source electrode electrically connecting to said source layer and said base layer and forming a drain electrode electrically connecting to said semiconductor substrate.

20. A production method of a vertical type MOSFET according to claim 19, wherein an index of plane of said main surface of said semiconductor layer is set to (1 0 0), and said step of forming a mask includes forming said mask patterned to have said opening part extending at least along a <

0 1 1>

crystal axis of said semiconductor layer.

21. A production method of a vertical type MOSFET according to claim 20, wherein said step of forming a second groove includes adjusting an index of plane of said side surface of said second groove to (1 1 1).

22. A production method of a vertical type MOSFET according to claim 20, wherein said mask is patterned such that said opening part includes a first opening part extending along said <

0 1 1>

crystal axis and a second opening part extending along a direction perpendicular to said <

0 1 1>

crystal axis.

23. A production method of a vertical type MOSFET according to claim 22, wherein said step of forming a second groove includes adjusting an index of plane of said side surface of said second groove to (1 1 1).

24. A production method of a vertical type MOSFET according to claim 19, wherein an index of plane of said main surface of said semiconductor layer is set to (1 0 0), and said step of forming a mask includes forming said mask patterned to have said opening part extending at least along a <

0 0 1>

crystal axis of said semiconductor layer.

25. A production method of a vertical type MOSFET according to claim 24, wherein said step of forming a second groove includes adjusting an index of plane of said side surface of said second groove to (1 1 0).

26. A production method of a vertical type MOSFET according to claim 24, wherein said mask is patterned such that said opening part includes a first opening part extending along said <

0 0 1>

crystal axis and a second opening part extending along a direction perpendicular to said <

0 0 1>

crystal axis.

27. A production method of a vertical type MOSFET according to claim 26, wherein said step of forming a second groove includes adjusting an index of plane of said side surface of said second groove to (1 1 0).