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Method of metal/polysilicon gate formation in a field effect transistor

  • US 6,015,747 A
  • Filed: 12/07/1998
  • Issued: 01/18/2000
  • Est. Priority Date: 12/07/1998
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a field effect transistor, the method comprising the steps of:

  • forming source and drain regions in a semiconductor substrate;

    depositing polysilicon on a surface of the semiconductor substrate between the source and drain regions;

    forming first and second oxide spacers adjacent the polysilicon on the surface of the semiconductor substrate;

    forming a masking layer covering substantially all the semiconductor substrate;

    selectively removing portions of the masking layer to expose at least selected portions of the polysilicon;

    removing a part of the selected portions of the polysilicon to an etch depth to define a trench between the first and second oxide spacers, the trench exposing a deposition surface of the polysilicon for forming the metallpolysilicon layer; and

    selectively depositing electroless metal to form a metal/polysilicon gate in the trench at the selected portions of the polysilicon.

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