Nitride-based semiconductor element and method for manufacturing the same
First Claim
1. A nitride-based semiconductor element comprising:
- a first layer;
a mask formed on said first layer, said mask having a plurality of opening portions;
a nitride-based compound semiconductor layer formed on said mask, said nitride-based semiconductor layer including;
a first region which has threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent opening portions of said plurality of opening portions in said mask, a plurality of dislocations extend vertically to a surface of said mask; and
a second region which comprises portions other than said middle portions and free from said dislocations; and
a desired element structure formed above said mask having said plurality of opening portions.
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Abstract
Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.
308 Citations
18 Claims
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1. A nitride-based semiconductor element comprising:
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a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based compound semiconductor layer formed on said mask, said nitride-based semiconductor layer including; a first region which has threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent opening portions of said plurality of opening portions in said mask, a plurality of dislocations extend vertically to a surface of said mask; and a second region which comprises portions other than said middle portions and free from said dislocations; and a desired element structure formed above said mask having said plurality of opening portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 18)
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12. A nitride-based light emitting element comprising:
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a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based compound semiconductor layer formed on said mask, said nitride-based semiconductor layer including; a first region which has threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent opening portions of said plurality of opening portions in said mask, a plurality of dislocations extend vertically to a surface of said mask; and a second region which comprises portions other than said middle portions and free from said dislocations; and a light-emitting layer formed above said mask having said plurality of opening portions, said light-emitting layer being sandwiched between current injection layers. - View Dependent Claims (13, 14, 15, 16)
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17. A nitride-based semiconductor element comprising:
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a first layer; a mask formed on said first layer, said mask having a plurality of opening portions; a nitride-based flattening semiconductor layer formed on said mask; and a desired element structure formed on said mask with said nitride-based flattening semiconductor layer interposed therebetween.
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Specification