Method and apparatus for a dual-inlaid damascene contact to sensor

• US 6,016,011 A
• Filed: 04/27/1999
• Issued: 01/18/2000
• Est. Priority Date: 04/27/1999
• Status: Expired due to Term

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Cao, Min, Ray, Gary W, Theil, Jeremy A, Vook, Dietrich W
• Primary Examiner(s): Saadat, Mahshid
• Assistant Examiner(s): CLARK, JASMINE JHIHAN B
• Application Number:
  US09/300,812
• Time in Patent Office: 266 Days
• Field of Search: 257/773, 257/750, 257/758, 257/774, 438/622-626, 438/629
• US Class Current: 257/773
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/1055 the devices comprising amorphous materials of Group IV of the Periodic Table

Abstract

A dual-inlaid damascene contact having a polished surface for directly communicating an electrically conductive layer to a semiconductor layer. A dielectric layer is formed on the electrically conductive layer. A dual-inlaid cavity is formed by etching a via cavity and a contact cavity into the dielectric layer. A damascene contact is formed by depositing tungsten into the dual-inlaid cavity. Chemical-mechanical polishing is used to planarize and smooth a surface of the damascene contact until the surface is coplanar with the dielectric layer. A semiconductor layer is then deposited on the damascene contact. The semiconductor layer can be the node of an amorphous silicon P-I-N photodiode. Electrical interconnection between the node of the photodiode and the electrically conductive layer is accomplished without using an intermediate electrode, and the smooth damascene contact improves surface adhesion, reduces contact resistance, and provides a discrete connection to the semiconductor layer. The damascene contact may be polished to provide a light reflective surface finish for reflecting light incident on the damascene contact back into the semiconductor layer to improve the quantum efficiency of the P-I-N photodiode.

Claims

1. A dual-inlaid damascene contact comprising:

an electrically conductive layer;

a dielectric layer formed on the electrically conductive layer, the dielectric layer having a dual-inlaid cavity formed therein, the dual-inlaid cavity comprising a contact cavity formed in a portion of the dielectric layer, the contact cavity having a bottom surface, first sidewall surfaces, and an opening adjacent to a surface of the dielectric layer, and

a via cavity formed in a portion of the dielectric layer, the via cavity having second sidewall surfaces that extend the contact cavity to the electrically conductive layer, the electrically conductive layer having a via surface defined by an exposed portion of the electrically conductive layer adjacent to the via cavity;

a damascene contact disposed in the dual-inlaid cavity and in electrical communication with the electrically conductive layer, the damascene contact extending from the via surface to a contact surface adjacent to the opening of the contact cavity; and

a semiconductor layer formed on the surface of the dielectric layer and positioned over a portion of the contact surface and in electrical communication with the contact surface, whereby the damascene contact forms an interconnect structure between the electrically conductive layer and the semiconductor layer.

2. The dual-inlaid damascene contact of claim 1, wherein the dielectric layer is formed of a first dielectric layer and a second dielectric layer, the contact cavity is formed in the second dielectric layer and the via cavity is formed in the first dielectric layer.

3. The dual-inlaid damascene contact of claim 1, wherein the dielectric layer is formed of a first dielectric layer, a second dielectric layer, and a third dielectric layer, the contact cavity is formed in the third dielectric layer and the via cavity is formed in the second and the first dielectric layers.

4. The dual-inlaid damascene contact of claim 1, wherein the electrically conductive layer comprises a metal selected from the group consisting of tungsten, copper, and aluminum.

5. The dual-inlaid damascene contact of claim 1, wherein the electrically conductive layer comprises an aluminum copper alloy containing about 1.5% copper.

6. The dual-inlaid damascene contact of claim 1, wherein the damascene contact comprises an electrically conductive material selected from the group consisting of tungsten, aluminum, and copper.

7. The dual-inlaid damascene contact of claim 1, wherein the contact surface is polished and is substantially coplanar with the surface of the dielectric layer.

8. The dual-inlaid damascene contact of claim 1, wherein the semiconductor layer is a material selected from the group consisting of amorphous silicon, microcrystalline silicon, silicon carbide, amorphous silicon germanium, and amorphous germanium.

9. The dual-inlaid damascene contact of claim 1 further comprising an intermediate layer disposed on the first sidewall surfaces, the bottom surface, the second sidewall surfaces, and the via surface and positioned between the damascene contact and the dielectric layer.

10. The dual-inlaid damascene contact of claim 7, wherein the contact surface has a surface finish that reflects light.

11. The dual-inlaid damascene contact of claim 8, wherein the semiconductor layer is doped amorphous silicon and the semiconductor layer is a node of an intrinsic amorphous silicon P-I-N Photodiode.

12. The dual-inlaid damascene contact of claim 10, wherein the intermediate layer is selected from the group consisting of titanium, titanium nitride, titanium tungsten, and tantalum nitride.