Automated washing method

• US 6,017,397 A
• Filed: 03/05/1993
• Issued: 01/25/2000
• Est. Priority Date: 03/05/1993
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Hyundai Electronics America Incorporated (SK Hynix Inc.)
• Inventors: Doran, Daniel B.
• Primary Examiner(s): VINCENT, SEAN E
• Application Number:
  US08/026,669
• Time in Patent Office: 2,517 Days
• Field of Search: 134/1, 134/10, 134/26, 134/30, 134/34, 134/36, 134/37, 134/1.1, 134/1.2, 134/1.3, 437/649, 216/48, 430/256
• US Class Current: 134/1
• CPC Class Codes: B08B 7/0057 by ultraviolet radiation
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A system and a method for washing objects, such as cassettes and carriers used to hold and transport silicon wafers during manufacture of semiconductor chips. The method employs the steps of exposing to ultraviolet radiation the objects in a process chamber, spraying of developer fluid onto the objects, rinsing the objects, spraying of surfactant solution on the objects, rinsing the objects and drying the objects using heated, ionized ULPA filtered air. Apparatus for accomplishing the above is disclosed.

Claims

1. A method for automated washing of objects, comprising the following steps:

(a) placing the objects to be washed in a chamber;

(b) exposing the objects to ultraviolet radiation;

(c) applying resist developer fluid to the objects;

(d) rinsing the resist developer;

(e) applying surfactant solution to the objects;

(f) rinsing the surfactant solution from the objects; and

blowing air into the chamber to dry the objects.

2. A method for automated washing of objects, comprising the following steps:

(a) placing the objects to be washed in a chamber;

(b) exposing the objects to ultraviolet radiation in said chamber to insure complete exposure of any resist contamination;

(c) applying resist developer fluid to the objects in said chamber;

(d) rinsing the resist developer residue from the objects in said chamber;

(e) applying surfactant solution to the objects in said chamber;

(f) rinsing the surfactant solution from the objects in said chamber; and

blowing air into the chamber to dry the objects.

3. The method of claim 2, in which the applying of resist developer fluid in step (c) is done by spraying said fluid onto said objects.

4. The method of claim 2, in which the applying of surfactant solution to the objects in step (e) is done by spraying said solution onto said objects.

5. The method of claim 2, in which step (e) includes the sub-step of mixing surfactant with water.

6. The method of claim 2, in which the rinsing operations in steps (d) and (f) are done by spraying ultra-pure water onto the objects.

7. The method of claim 2, in which the air which is blown in step (g) is heated, ionized and filtered to an ultra-low particulate state.

8. The method of claim 2, also including the additional step of applying nitrogen gas to the chamber to aid in drying of the objects.

9. The method of claim 2, also including the additional step of recycling the resist developer fluid.

10. A method for automated washing of objects employed in the manufacture of semiconductor chips, comprising the following steps:

(a) loading contaminated objects into a process chamber;

(b) applying ultraviolet radiation to the objects for a limited time in said process chamber to insure complete exposure of any resist contamination;

(c) spraying resist developer fluid onto the objects in said process chamber;

(d) flushing developer residue from the objects using ultra-pure water in said process chamber;

(e) spraying a solution of surfactant and ultra-pure water onto the objects in said process chamber;

(f) rinsing the objects and said process chamber with hot ultra-pure water; and

(g) blowing heated ionized air into said process chamber to dry the objects which have been washed.

11. The method of claim 10, in which the flushing operation of step (d) is done by spraying the ultra-pure water onto said objects.

12. The method of claim 10, in which the rinsing operation of step (f) is a spraying operation.

13. The method of claim 10, also including the additional step of recycling the resist developer fluid from the process chamber by pumping it through a filter and returning it for further use.

14. The method of claim 10, also including the additional step of applying nitrogen gas to the process chamber during the drying of the objects.

15. The method of claim 10, in which step (e) includes the sub-step of mixing surfactant from a reservoir with ultra-pure water.

16. The method of claim 10, in which step (g) includes the sub-steps of heating, filtering ionizing and blowing air drawn from a room air source.