Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers

• US 6,017,414 A
• Filed: 03/31/1997
• Issued: 01/25/2000
• Est. Priority Date: 03/31/1997
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Koemtzopoulos, C. Robert, Kozakevich, Felix
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): OLSEN, ALLAN W
• Application Number:
  US08/829,674
• Time in Patent Office: 1,030 Days
• Field of Search: 118/712, 134/1.1, 134/1.2, 134/21, 156/345, 216/59, 216/61, 216/67, 438/5, 438/10, 438/11, 438/12, 438/13, 438/14, 438/17, 438/710, 438/905
• US Class Current: 156/345.25
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: Y10S 156/916 Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Abstract

The end of a cleaning process of a vacuum workpiece processing chamber evacuated to a constant pressure vacuum condition is controlled. The chamber is cleaned by exciting a cleaning gas to a plasma state by a field including an electric component. The process is terminated in response to detection of a substantial decrease in the time rate of change of pressure in a foreline of a vacuum pump evacuating the chamber after the plasma electrical impedance has been stabilized. The substantial decrease signals that the chamber is clean. A horn in the chamber that excites the gas to a plasma is indicated as being clean when the plasma electrical impedance is stable. The indication of plasma impedance stabilization is derived by monitoring horn DC bias voltage, or one or both variable reactances of a matching network connected between the horn and an r.f. excitation source for the horn.

Claims

1. A method of ending a cleaning process of a vacuum workpiece processing chamber evacuated to a vacuum condition comprising terminating the cleaning process in response to detecting a substantial change in flow rate of gas evacuated from the chamber.

2. The method of claim 1 wherein the flow rate is detected by detecting pressure in a foreline of a vacuum pump evacuating the chamber while the chamber is maintained at approximately constant pressure.

3. A method of ending a cleaning process of a vacuum workpiece processing chamber evacuated to a vacuum condition, the chamber being cleaned by exciting a cleaning gas to a plasma state by a field including an electric component, the method comprising terminating the cleaning process in response to detecting a substantial change in the flow rate of gas evacuated from the chamber after the plasma electrical impedance has been stabilized.

4. The method of claim 3 wherein the flow rate is detected by detecting pressure in a foreline of a vacuum pump evacuating the chamber while the chamber is maintained at approximately constant pressure.

5. The method of claim 3 wherein the plasma is excited by AC electromagnetic energy derived by an electrode in the chamber.

6. The method of claim 5 wherein an indication of plasma impedance stabilization is derived by monitoring a DC bias voltage associated with the electrode.

7. The method of claim 5 wherein the plasma impedance is indicated as being stabilized in response to the electrode DC bias voltage having a local peak value.

8. The method of claim 5 wherein the plasma impedance is indicated as being stabilized in response to the electrode DC bias voltage having a local peak value following a substantial increase in the time rate of change of the electrode DC bias voltage.

9. The method of claim 5 wherein the plasma impedance is indicated as being stabilized in response to the electrode DC bias voltage having a local peak value following a substantial increase in the time rate of change of electrode DC bias voltage and followed by a slight decrease in the time rate of change of electrode DC bias voltage.

10. The method of claim 6 wherein the indication of plasma impedance stabilization is also derived by monitoring the value of a variable reactance in a matching network connected between an excitation source for the electrode and the electrode.

11. The method of claim 6 wherein the indication of plasma impedance stabilization is also derived by monitoring the values of two variable reactances in a matching network connected between an excitation source for the electrode and the electrode.

12. The method of claim 5 wherein an indication of plasma electrical impedance stabilization is derived by monitoring the value of a variable reactance in a matching network connected between the electrode and an excitation source for the electrode.

13. The method of claim 12 wherein the plasma impedance is indicated as being stabilized in response to the value of the variable reactance being substantially constant for more than a predetermined interval.

14. The method of claim 5 wherein an indication of plasma electrical impedance stabilization is derived by monitoring the values of two variable reactances in a matching network connected between the electrode and an excitation source for the electrode.

15. The method of claim 14 wherein the plasma impedance is indicated as being stabilized in response to the values of both variable reactances being substantially constant for more than a predetermined interval.

16. The method of claim 3 wherein the plasma is excited by AC energy emitted by an electrical impedance, and stabilization of the plasma electrical impedance is detected by monitoring an electrical parameter associated with the plasma electrical impedance.

17. The method of claim 16 wherein the electrical parameter includes a value of a variable reactance in a matching network connected between the electrical impedance and an excitation source for the electrical impedance.

18. The method of claim 16 wherein the electrical parameter includes the values of two variable reactances in a matching network connected between the electrical impedance and an excitation source for the electrical impedance.

19. The method of claim 16 wherein the electrical parameter includes DC bias voltage between the impedance and plasma, the impedance being in the chamber.

20. Apparatus for controlling cleaning of a vacuum workpiece processing chamber evacuated to a vacuum condition, the chamber being cleaned by exciting a cleaning gas to a plasma state by a field including an electric component, the apparatus comprising a sensor for the flow rate of gas evacuated from the chamber, and a controller responsive to the sensor and at least one electrical parameter associated with the plasma impedance for controlling the flow of the cleaning gas to the chamber and the power to the electrode.

21. The apparatus of claim 20 wherein the sensor is a pressure sensor in a foreline of a vacuum pump connected to the chamber.

22. The apparatus of claim 20 wherein the plasma is excited by AC electromagnetic energy derived by an electrode.

23. The apparatus of claim 22 wherein the electrical parameter includes electrode DC bias voltage.

24. The apparatus of claim 22 wherein the electrical parameter includes a value of a variable reactance in a matching network connected between the electrode and an excitation source for the electrode.

25. The apparatus of claim 22 wherein the electrical parameter includes the values of two variable reactances in a matching network connected between the electrode and an excitation source for the electrode and electrode DC bias voltage.

26. The apparatus of claim 25 wherein the electrical parameter includes electrode DC bias voltage.

27. The apparatus of claim 20 wherein the plasma is excited by electric energy emitted by an electrical impedance.

28. The apparatus of claim 27 wherein the electrical parameter is a value of a variable reactance in a matching network connected between the electrical impedance and an excitation source for the electrical impedance.

29. The apparatus of claim 27 wherein the electrical parameter is a value of two variable reactances in a matching network connected between the electrical impedance and an excitation source for the electrical impedance.

30. Apparatus for controlling cleaning of a vacuum workpiece processing chamber evacuated to a vacuum condition comprising a sensor for the flow rate of gas evacuated from the chamber, and a controller responsive to the sensor for controlling the power to the electrode and the flow of an etching cleaning agent to the evacuated chamber, the controller turning off power to the electrode and causing the etching cleaning agent to stop flowing to the chamber in response to a substantial change in the flow rate detected by the sensor.

31. The apparatus of claim 30 wherein the sensor is a pressure sensor in a foreline of a vacuum pump connected to the chamber.

32. A method of detecting when a cleaning process of a vacuum workpiece processing chamber evacuated to a vacuum condition has been completed, comprising detecting a substantial change in the flow rate of gas evacuated from the chamber while an etching cleaning agent is being applied to the chamber and the chamber is being evacuated.

33. The method of claim 32 wherein the cleaning process is performed by electrically exciting a cleaning gas to a plasma, the cleaning process being indicated as being completed only after an electric parameter associated with exciting the cleaning gas is detected as being stabilized, followed by the detected change in the of the gas glow rate.

34. The method of claim 32 wherein the flow rate is detected by detecting pressure in a foreline of a vacuum pump evacuating the chamber while the chamber is maintained at approximately constant pressure.

35. Apparatus for detecting when a cleaning process of a vacuum workpiece processing chamber evacuated to a vacuum condition has been completed, comprising a sensor for the flow rate of gas evacuated from the chamber, and a monitor responsive to the sensor for detecting a substantial change in the flow rate sensed by the sensor while an etching cleaning agent is being applied to the chamber and the chamber is being evacuated.

36. The apparatus of claim 35 wherein the cleaning process is performed by exciting a cleaning gas to a plasma, the excited cleaning gas being the cleaning agent, the monitor being further responsive to an electric parameter associated with exciting the cleaning gas to a plasma being stabilized.

37. The apparatus of claim 35 wherein the sensor is a pressure sensor in a foreline of a vacuum pump connected to the chamber.

38. A computer storage medium for activating a computer for controlling ending of a cleaning process of a vacuum workpiece processing chamber evacuated to a vacuum condition, the computer being responsive to a signal indicative of a function of flow rate of gas evacuated from the chamber, the storage medium comprising stored signals for commanding the computer to terminate the cleaning process in response to the signal indicating to the computer that there is a substantial change in the flow rate of gas evacuated from the chamber.

39. The computer storage medium of claim 38 wherein the cleaning gas in the processing chamber is activated to a plasma state during the cleaning process, and the signals are for commanding the computer to terminate the cleaning process in response to an indication of the plasma having a stabilized impedance.