Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck

• US 6,017,485 A
• Filed: 03/28/1996
• Issued: 01/25/2000
• Est. Priority Date: 03/28/1996
• Status: Expired due to Fees

• Current Assignee: Carborundum Universal Investment Limited (Compagnie de Saint-Gobain SA)
• Original Assignee: Carborundum Universal Investment Limited (Compagnie de Saint-Gobain SA)
• Inventors: Youngman, Robert A., Enck, Rudolph C., Nemecek, Thomas S., Harris, Jonathan H.
• Primary Examiner(s): DERRINGTON, JAMES H
• Application Number:
  US08/622,994
• Time in Patent Office: 1,398 Days
• Field of Search: 264/647, 264/653, 264/662, 264/663, 264/664, 264/666, 264/614, 264/618, 264/676
• US Class Current: 264/618
• CPC Class Codes: C04B 35/581 based on aluminium nitride
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A controlled dielectric loss, sintered aluminum nitride body having a density of greater than about 95% theoretical, a thermal conductivity of greater than about 100 W/m-K, and a dissipation factor measured at room temperature at about 1 KHz selected from:

(a) less than or equal to about 0.001; and

(b) greater than or equal to about 0.01.

A process for producing a controlled dielectric loss, sintered aluminum nitride body, comprising heat treating an aluminum nitride body at sintering temperatures, including providing a heat treatment atmosphere which effects a selected nitrogen vacancy population in the aluminum nitride body at the sintering temperatures, and cooling the aluminum nitride body from sintering temperatures at a controlled rate and in a cooling atmosphere effective to control the selected nitrogen vacancy population.

Claims

1. A process for making a high purity aluminum nitride electrostatic chuck, comprising the steps of:

a) providing a sintered body comprising polycrystalline aluminum nitride having an electrode embedded therein, said body being at a temperature of greater than about 850°

C., and

b) cooling the sintered body in a nitrogen-deficient atmosphere to cause transport of nitrogen out of the polycrystalline aluminum nitride and to effect a selected nitrogen vacancy population in the polycrystalline aluminum nitride.

2. The process of claim 1 wherein the sintered body further comprises yttria.

3. The process of claim 1 wherein the sintered body is obtained by sintering a raw AlN powder produced by carbothermal reduction.

4. The process of claim 1 wherein the cooling rate of step b) is carried out at a rate of at least 5°

C./minute.

5. The process of claim 1 wherein the nitrogen-deficient atmosphere comprises no more than 0.1% nitrogen.

6. The process of claim 1 wherein the nitrogen-deficient atmosphere consists essentially of argon.

7. The process of claim 1 wherein step a) comprises the step of sintering a raw AlN powder at a sintering temperature to produce the sintered body, and the temperature at which cooling of the sintered body begins in step b) is the temperature of the sintering step.

8. The process of claim 1 wherein step a) comprises:

i) providing an already sintered body having a first nitrogen vacancy population, the body being at a first temperature which is insufficient to produce transport of nitrogen out of the polycrystalline aluminum nitride, followed by,

ii) raising the temperature of the sintered body to a temperature sufficient to produce transport of nitrogen out of the polycrystalline aluminum nitride, and wherein

the cooling in step b) produces a sintered body having a second nitrogen vacancy population which is larger than the first nitrogen vacancy population.

9. The process of claim 1 wherein the sintered body consists essentially of polycrystalline aluminum nitride.

10. A process for making a high purity aluminum nitride electrostatic chuck, comprising the steps of:

a) providing a mixture comprising;

i) a raw powder comprising aluminum nitride, and

ii) an electrode embedded in the raw powder,

b) sintering the mixture to produce a polycrystalline sintered aluminum nitride body having an electrode embedded therein, and

c) cooling the sintered body in a nitrogen deficient atmosphere to cause transport of nitrogen out of the polycrystalline aluminum nitride and to effect a selected nitrogen vacancy population in the polycrystalline aluminum nitride.