Three-dimensional microstructures and methods for making three-dimensional microstructures
First Claim
1. A method for fabricating a microstructure in a radiation-sensitive resist having a relaxed conformation, wherein the microstructure comprises a selected pattern having at least one feature with at least one non-vertical edge, said method comprising the steps of:
- (a) reversibly deforming the resist into a three-dimensional conformation that differs from the relaxed conformation of the resist;
(b) selectively exposing portions of the deformed resist to radiation to which the resist is sensitive;
(c) returning the resist to the relaxed conformation; and
(d) developing the resist either to selectively remove the radiation-exposed portions of the resist, or to selectively remove the unexposed portions of the resist;
whereby a pattern is formed in the resist having at least one feature with at least one non-vertical edge.
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Abstract
Methods are disclosed for making microstructures. In one method, the resist layer is reversibly deformed during exposure. When the resist is flattened and developed after exposure, non-vertical features result that are not obtainable through other existing means. One application of this method is to make nested cones suitable for use as a highly efficient x-ray lens. In another disclosed method, "halftone" lithography is used to generate microstructures having features whose height may vary continuously. One application of this method is to make a novel telescope array, a thin film having telescopic magnification properties.
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Citations
31 Claims
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1. A method for fabricating a microstructure in a radiation-sensitive resist having a relaxed conformation, wherein the microstructure comprises a selected pattern having at least one feature with at least one non-vertical edge, said method comprising the steps of:
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(a) reversibly deforming the resist into a three-dimensional conformation that differs from the relaxed conformation of the resist; (b) selectively exposing portions of the deformed resist to radiation to which the resist is sensitive; (c) returning the resist to the relaxed conformation; and (d) developing the resist either to selectively remove the radiation-exposed portions of the resist, or to selectively remove the unexposed portions of the resist; whereby a pattern is formed in the resist having at least one feature with at least one non-vertical edge. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a microstructure in a radiation-sensitive resist, wherein the microstructure comprises a selected pattern having at least one three-dimensional feature with a continuously variable height, said method comprising the steps of:
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(a) exposing the resist to radiation to which the resist is sensitive through a mask comprising pixels of discrete absorbers of the radiation, wherein the size of the absorber in each pixel corresponds to the height of the corresponding part of the pattern; and (b) developing the resist to selectively remove resist to a depth corresponding to the amount of radiation received by each location of the resist; wherein said exposing step or said developing step is performed with sufficient blurring that the fine structure of the absorbers is not apparent in the developed pattern;
whereby a pattern is formed in the resist having at least one feature with a continuously variable height. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method for fabricating a microstructure comprising a security mark in a radiation-sensitive resist, said method comprising the steps of:
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(a) exposing the resist to radiation to which the resist is sensitive through a mask comprising pixels of discrete absorbers of the radiation, wherein the size of the absorber in each pixel corresponds to the features of the security mark; and (b) developing the resist to selectively remove resist at locations that were exposed to the radiation, or to selectively remove resist at locations that were not exposed to the radiation; wherein the size of one pixel, as imaged on the resist, is less than 700 nm across;
whereby a security mark is formed in the resist. - View Dependent Claims (30)
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31. A microstructure comprising a selected three-dimensional pattern having at least one three-dimensional feature with a continuously variable height in accordance with the selected pattern.
Specification