Lid assembly for high temperature processing chamber
First Claim
1. A lid assembly for a vapor deposition apparatus of the type having an enclosure housing a processing chamber, the lid assembly comprising:
- a base plate having a gas inlet for receiving one or more gases;
a gas distribution plate including a plurality of gas distribution holes fluidly coupled to the gas inlet for dispersing the gases into the chamber; and
a bypass passage coupled to the gas inlet and the processing chamber, the bypass passage offering less resistance to fluid flow than the gas distribution holes for allowing at least a portion of the gases to bypass the gas distribution holes into the chamber.
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Accused Products
Abstract
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
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Citations
13 Claims
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1. A lid assembly for a vapor deposition apparatus of the type having an enclosure housing a processing chamber, the lid assembly comprising:
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a base plate having a gas inlet for receiving one or more gases;
a gas distribution plate including a plurality of gas distribution holes fluidly coupled to the gas inlet for dispersing the gases into the chamber; anda bypass passage coupled to the gas inlet and the processing chamber, the bypass passage offering less resistance to fluid flow than the gas distribution holes for allowing at least a portion of the gases to bypass the gas distribution holes into the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An apparatus for fabricating an integrated circuit device comprising:
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an enclosure housing a processing chamber a gas mixing block attached to the enclosure and having an outlet coupled to the processing chamber and first and second gas inlets; a source of cleaning gas fluidly coupled to the gas mixing block; a source of process gas fluidly coupled to the gas mixing block; a valve coupled to the gas mixing block for selectively fluidly coupling the source of cleaning gas and the source of process gas with the gas mixing block to selectively allow cleaning gases or process gases into the processing chamber; a base plate having a gas inlet coupled to the gas mixing block; a gas distribution plate including a plurality of gas distribution holes fluidly coupled to the gas inlet for dispersing the gases into the chamber; and a bypass passage coupled to the gas inlet and the processing chamber, the bypass passage offering less resistance to fluid flow than the gas distribution holes for allowing at least a portion of the gases to bypass the gas distribution holes into the chamber. - View Dependent Claims (10, 11, 12, 13)
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Specification