Semiconductor devices with CSP packages and method for making them
First Claim
1. A method for making semiconductor devices, comprising the steps of:
- (a) fabricating an array of electrical components at a top side of a substrate, the electrical components including an insulating overcoat layer at the top side, the overcoat layer having holes for electrical connections, the electrical components additionally including bonding pads at the top side;
(b) connecting the electrical components to a cover;
(c) thinning a bottom side of the substrate except for a substrate residue;
(d) etching the substrate residue in a multistage etching process to produce scribe line regions between the electrical components and to produce terminal posts which extend to the bonding pads and which have bottom ends with a predetermined pattern, the terminal posts being insulated from the remainder of the substrate material, the multistage etching process employing a plurality of masking layers and producing steep-sloped sides on the terminal posts;
(e) metallizing the terminal posts; and
(f) dicing the electrical components at the scribe line regions.
3 Assignments
0 Petitions
Accused Products
Abstract
The invention relates to a semiconductor device which includes a packaged electrical component such as an IC chip, wherein terminal posts are realized within the chip area without additional wafer surface being required beyond the chip edge. A direct feedthrough of the individual electrical connections by way of downwardly extending terminal posts that are connected to bonding pads at the top of the chip results in a small lead length and thus lesser parasitic influences, which in turn results in optimum conditions for use at super-high frequencies. Furthermore, a process for making the semiconductor device offers the option of forming deep vertical trenches on the chip edge and to thus implement separation etching for dicing. During this process, the coverage of the side surface with encapsulating material effects a passivation on the chip edge without further outlay. Expensive rewiring of the connections on the bottom side of the chip is not necessarily due to the terminal posts.
114 Citations
26 Claims
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1. A method for making semiconductor devices, comprising the steps of:
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(a) fabricating an array of electrical components at a top side of a substrate, the electrical components including an insulating overcoat layer at the top side, the overcoat layer having holes for electrical connections, the electrical components additionally including bonding pads at the top side; (b) connecting the electrical components to a cover; (c) thinning a bottom side of the substrate except for a substrate residue; (d) etching the substrate residue in a multistage etching process to produce scribe line regions between the electrical components and to produce terminal posts which extend to the bonding pads and which have bottom ends with a predetermined pattern, the terminal posts being insulated from the remainder of the substrate material, the multistage etching process employing a plurality of masking layers and producing steep-sloped sides on the terminal posts; (e) metallizing the terminal posts; and (f) dicing the electrical components at the scribe line regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for making semiconductor devices, comprising the steps of:
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(a) fabricating an array of electrical components at a top side of a substrate, the electrical components including an insulating overcoat layer at the top side, the overcoat layer having holes for electrical connections, the electrical components additionally including bonding pads at the top side; (b) connecting the electrical components to a cover; (c) thinning a bottom side of the substrate except for a substrate residue; (d) etching the substrate residue in a multistage etching process to produce scribe line regions between the electrical components and to produce terminal posts which extend to the bonding pads and which have bottom ends with a predetermined pattern, the terminal posts being insulated from the remainder of the substrate material, the multistage etching process employing a plurality of masking layers and producing steep-sloped sides on the terminal posts; (e) coating the entire bottom side of the etched substrate residue with an encapsulating compound; (f) etching the encapsulating compound off where the terminal posts are located; and (g) metallizing the terminal posts. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification