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Dose monitor for plasma doping system

  • US 6,020,592 A
  • Filed: 08/03/1998
  • Issued: 02/01/2000
  • Est. Priority Date: 08/03/1998
  • Status: Expired due to Term
First Claim
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1. Plasma doping apparatus comprising:

  • a plasma doping chamber;

    a platen mounted in said plasma doping chamber for supporting a workpiece, said workpiece constituting a cathode;

    a source of ionizable gas coupled to said chamber, said ionizable gas containing a desired dopant for implantation into the workpiece;

    an anode spaced from said platen;

    a pulse source for applying high voltage pulses between said platen and said anode for producing a plasma having a plasma sheath in the vicinity of said workpiece, said plasma containing positive ions of said ionizable gas, said high voltage pulses accelerating said positive ions across the plasma sheath toward said platen for implantation into the workpiece; and

    a Faraday cup positioned adjacent to said platen for collecting a sample of said positive ions accelerated across said plasma sheath, said sample being representative of the number of positive ions implanted into the workpiece.

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