Kilowatt power transistor

• US 6,020,636 A
• Filed: 10/24/1997
• Issued: 02/01/2000
• Est. Priority Date: 10/24/1997
• Status: Expired due to Term

• Current Assignee: MKS Instruments Incorporated
• Original Assignee: ENI Technology, Inc.
• Inventors: Adishian, Gary C.
• Primary Examiner(s): GUAY, JOHN FRANCIS
• Application Number:
  US08/957,100
• Time in Patent Office: 830 Days
• Field of Search: 257/578, 257/584, 257/723, 257/724, 257/725, 257/732, 257/728
• US Class Current: 257/728
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49051 Connectors having different shapes
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

A high-power high-voltage transistor has four or more semiconductor dies mounted in thermal contact on a metal flange. Each die has a flat lower surface with a drain (collector) region formed over at least 80 percent of its lower surface. A gate (base) region and a source (emitter) region are formed respectively on upper surfaces of the die. The drain region is seated in direct electrical and thermal contact with the flange, so that the flange serves as a drain lead for the transistor die. The die has a drain-source breakdown voltage or collector-emitter breakdown voltage) on the order of one kilovolt or higher and an area of one hundred thousand square mils or larger. Molybdenum tabs between the drain (collector) region and the flange protect the die from thermally-induced stresses. The dies can be MOSFET power transistors, bipolar junction transistors or other solid-state devices. An oval lead frame can be employed for connecting to the source regions. A carousel arrangement carries an array of chips on a circular flange. The transistor can be implemented as a DC grounded drain, RF common source amplifier circuit. The gate-source input can float, allowing the drain to be DC and thermally grounded. The RF current path is conventional common source (emitter).

Claims

1. High-power high-voltage large chip transistor comprising a thermally and electrically conductive flange having a flat upper surface;

a semiconductor die having a flat lower surface with an electrode terminal 3 region formed over a majority of said lower surface, an electrode terminal 1 region and an electrode terminal 2 region formed respectively on portions of said die away from said flat lower surface;

a terminal 2 lead isolated from said flange and electrically connected to said electrode terminal 2 region;

a terminal 1 lead isolated from said flange and electrically connected to said electrode terminal 1 region; and

means for seating said electrode terminal 3 region in direct electrical and thermal contact with said flange, said means for seating including means for protecting said semiconductor die from thermal stresses, said flange serving as a terminal 3 lead for said die;

wherein said die has a breakdown voltage between the terminal 2 and terminal 3 regions on the order of one kilovolt or higher;

wherein said lower flat surface of said die has an area of approximately one hundred thousand square mils or larger; and

wherein said electrode terminal 3 region is metallized over substantially the entire surface thereof.

2. High-power high-voltage large chip transistor comprising a thermally and electrically conductive flange having a flat upper surface;

a semiconductor die having a flat lower surface with an electrode terminal 3 region formed over a majority of said lower surface, an electrode terminal 1 region and an electrode terminal 2 region formed respectively on portions of said die away from said flat lower surface;

a terminal 2 lead isolated from said flange and electrically connected to said electrode terminal 2 region;

a terminal 1 lead isolated from said flange and electrically connected to said electrode terminal 1 region; and

means for seating said electrode terminal 3 region in direct electrical and thermal contact with said flange, said flange serving as a terminal 3 lead for said die;

wherein said die has a breakdown voltage between the terminal 2 and terminal 3 regions on the order of one kilovolt or higher;

wherein said lower flat surface of said die has an area of approximately one hundred thousand square mils or larger; and

wherein said electrode terminal 3 region is metallized over substantially the entire surface thereof, wherein said means for seating said electrode terminal 3 region includes a molybdenum tab soldered between said electrode terminal 3 region and said flange.

3. High-power high-voltage large chip transistor comprising a thermally and electrically conductive flange having a flat upper surface;

a multi-chip array formed of a plurality of semiconductor dies, each having a flat lower surface with an electrode terminal 3 region formed over a majority of said lower surface, an electrode terminal 1 region and an electrode terminal 2 region formed respectively on portions of said die away from said flat lower surface;

a plurality of terminal 2 leads isolated from said flange and electrically connected to the electrode terminal 2 regions of respective ones of said dies;

a plurality of terminal 1 leads isolated from said flange and electrically connected to the electrode terminal 1 regions of respective ones of said dies; and

means for seating the electrode terminal 3 regions of said dies in direct electrical and thermal contact with said flange, said means for seating including means for protecting said semiconductor die from thermal stresses, said flange serving as a terminal 3 lead for said dies;

wherein each said die has a breakdown voltage between the respective terminal 2 and terminal 3 regions on the order of one kilovolt or higher;

wherein the lower flat surface of said die has an area of approximately one hundred thousand square mils or larger; and

wherein each said drain region is metallized over substantially the entire surface thereof.

4. High-power transistor according to claim 3 wherein there are at least four of said dies positioned on said flange.

5. High-power high-voltage large chip transistor according to claim 3, wherein said dies are MOSFET transistor dies, and said electrode terminal 1, 2, and 3 regions respectively are gate, source, and drain regions.

6. A high-power grounded drain common source RF amplifier circuit comprising an input terminal, a supply of DC voltage, a load device, and a high-power high-voltage large chip transistor which includes a thermally and electrically conductive flange having a flat upper surface;

a semiconductor die having a flat lower surface with a drain region formed over a majority of said lower surface, a gate region and a source region formed respectively on portions of said die away from said flat lower surface;

a source lead isolated from said flange and electrically connecting said supply of DC voltage and said load device to said source region;

a gate lead isolated from said flange and electrically coupling said input terminal to said gate region; and

means for seating said drain region in direct electrical and thermal contact with said flange, said means for seating including means for protecting said semiconductor die from thermal stresses, said flange serving as a drain lead for said die;

wherein said die has a drain-source breakdown voltage on the order of one kilovolt or higher;

wherein said lower flat surface of said die has an area of approximately one hundred thousand square mils or larger; and

wherein said drain region is metallized over substantially the entire surface thereof; and

a heat sink on which said flange is mounted for drawing heat from said transistor.

7. The high-power grounded drain common source RF amplifier according to claim 6 further comprising a DC isolating stage between said input terminal and said gate electrode so that the input signal applied thereto is floating with respect to said drain region.

8. The high-power grounded drain common source RF amplifier according to claim 6 wherein said supply provides said DC power to said source at substantially -160 volts or more.

9. High-power high-voltage large chip transistor comprising a thermally and electrically conductive flange having a flat upper surface;

a semiconductor die having a flat lower surface with an electrode terminal 3 region formed over a majority of said lower surface, an electrode terminal 1 region and an electrode terminal 2 region formed respectively on portions of said die away from said flat lower surface;

means for seating said electrode terminal 3 region in direct electrical and thermal contact with said flange, said flange serving as a terminal 3 lead for said die;

wherein said die has a breakdown voltage between the terminal 2 and terminal 3 regions on the order of one kilovolt or higher;

wherein said lower flat surface of said die has an area of approximately one hundred thousand square mils or larger; and

wherein said electrode terminal 3 region is metallized over substantially the entire surface thereof; and

a lead frame arrangement seated on said flange, including an insulator body, a metal surround on said body centered on said die and having an opening therein to accommodate said die, said opening continuing centered thereon through said insulator body, a terminal 2 lead on said body in intimate electrical contact with said surround, a terminal 1 lead on said body isolated from said surround, wire bond means electrically connecting the surround to said electrode terminal 2 region of said die, and wire bond means electically connecting the terminal 1 lead to said electrode terminal 1 region on said die.

10. High-power high-voltage large chip transistor comprising a thermally and electrically conductive flange in the form of a disk having a flat upper surface;

a multi-chip array formed of a plurality of semiconductor dies arranged circumferentially at angular intervals on the flange, each die having a flat lower surface with an electrode terminal 3 region formed over a majority of said lower surface, an electrode terminal 1 region and an electrode terminal 2 region formed respectively on portions of said die away from said flat lower surface;

an annular terminal 2 lead frame having an insulator layer and a metal layer isolated from said flange, means electrically connecting the metal layer of said annular terminal 2 lead to the electrode terminal 2 regions of respective ones of said dies;

terminal 1 means connected to the electrode terminal 1 regions of said respective dies;

said flange serving as a terminal 3 lead for said dies;

wherein each said die has a breakdown voltage between the respective terminal 2 and terminal 3 regions on the order of one kilovolt or higher;

wherein the lower flat surface of said die has an area of approximately one hundred thousand square mils or larger; and

wherein each said electrode terminal 3 region is metallized over substantially the entire surface thereof.

11. High-power high-voltage large chip transistor comprising a thermally and electrically conductive flange having a flat upper surface;

a multi-chip array formed of a plurality of semiconductor dies, each having a flat lower surface with an electrode terminal 3 region formed over a majority of said lower surface, an electrode terminal 1 region and an electrode terminal 2 region formed respectively on portions of said die away from said flat lower surface;

a plurality of terminal 2 leads isolated from said flange and electrically connected to the electrode terminal 2 regions of respective ones of said dies;

said flange serving as a terminal 3 lead for said dies;

wherein each said die has a breakdown voltage between the respective terminal 2 and terminal 3 regions on the order of one kilovolt or higher;

wherein the lower flat surface of said die has an area of approximately one hundred thousand square mils or larger; and

wherein each said drain region is metallized over substantially the entire surface thereof; and

a lead frame arrangement seated on said flange, including an insulator body, a plurality of metal surrounds on said body, each being centered on a respective one of said dies and having an opening therein to accommodate the associated die, said openings continuing centered thereon through said insulator body, a plurality of terminal 2 leads on said body in intimate electrical contact with a respective one of said surrounds, a plurality of terminal 1 lead on said body isolated from said surrounds, wire bond means electrically connecting the surround to said electrode terminal 2 region of the associated die, and wire bond means electically connecting the terminal 1 lead to said electrode terminal 1 region on the associated die.