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Transmission gate including body effect compensation circuit

  • US 6,020,778 A
  • Filed: 04/23/1998
  • Issued: 02/01/2000
  • Est. Priority Date: 04/24/1997
  • Status: Expired due to Term
First Claim
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1. A transmission gate comprising:

  • first and second terminals;

    a first transistor of a first conductivity type which has a drain and source connected between said first and second terminals, and is rendered conductive by a first signal;

    a second transistor of a second conductivity type which has a drain and source connected between said first and second terminals, and is rendered conductive by a second signal corresponding to an inverted signal of said first signal;

    a first body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said first transistor when said first transistor is ON; and

    a second body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said second transistor when said second transistor is ON,said first body effect compensation circuit including a third transistor of the second conductivity type having a drain and source connected between the back gate of said first transistor and said first terminal, andsaid second body effect compensation circuit including a fourth transistor of the first conductivity type having a drain and source connected between the back gate of said second transistor and said first terminal,wherein a back gate of said third transistor is connected to the back gate of said second transistor, and a back gate of said fourth transistor is connected to the back gate of said first transistor.

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