Transmission gate including body effect compensation circuit

• US 6,020,778 A
• Filed: 04/23/1998
• Issued: 02/01/2000
• Est. Priority Date: 04/24/1997
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Shigehara, Hiroshi, Kinugasa, Masanori, Hisamoto, Toshinobu
• Primary Examiner(s): ZWEIZIG, JEFFERY SHAWN
• Application Number:
  US09/064,814
• Time in Patent Office: 649 Days
• Field of Search: 327/365, 327/403, 327/404, 327/427, 327/534
• US Class Current: 327/534
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 17/162 without feedback from the output circuit to the control circuit
• CPC Class Codes: H03K 17/6872 using complementary field-effect transistors
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET

Abstract

Two terminals of each of transistors (P1, N1) are connected between two terminals (A, B). A body effect compensation circuit (COMP-P1) for the transistor (P1) and a body effect compensation circuit (COMP-N1) for the transistor (N1) are arranged. The back gates of transistors (P1P, P2P) in the circuit (COMP-P1) and transistors (P1N, P2N) in the circuit (COMP-N1) are commonly connected to the back gate of the transistor (P1). The back gates of transistors (N1N, N2N) in the circuit (COMP-N1) and transistors (N1P, N2P) in the circuit (COMP-P1) are commonly connected to the back gate of the transistor (N1). With this structure, in transferring a signal from one terminal (A or B) to the other terminal (B or A) or vice verse, the signal potential is transferred to the back gates of the transistors (P1, N1) at a high speed to increase the signal transfer speed.

Claims

1. A transmission gate comprising:

first and second terminals;

a first transistor of a first conductivity type which has a drain and source connected between said first and second terminals, and is rendered conductive by a first signal;

a second transistor of a second conductivity type which has a drain and source connected between said first and second terminals, and is rendered conductive by a second signal corresponding to an inverted signal of said first signal;

a first body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said first transistor when said first transistor is ON; and

a second body effect compensation circuit for reducing the difference between a potential of a back gate and a potential of the source of said second transistor when said second transistor is ON,

said first body effect compensation circuit including a third transistor of the second conductivity type having a drain and source connected between the back gate of said first transistor and said first terminal, and

said second body effect compensation circuit including a fourth transistor of the first conductivity type having a drain and source connected between the back gate of said second transistor and said first terminal,

wherein a back gate of said third transistor is connected to the back gate of said second transistor, and a back gate of said fourth transistor is connected to the back gate of said first transistor.

2. A gate according to claim 1, wherein said third transistor is rendered conductive by the second signal, and said fourth transistor is rendered conductive by the first signal.

3. A gate according to claim 1, wherein said first body effect compensation circuit connects the back gate of said first transistor to a first potential terminal when said first transistor is OFF, and

said second body effect compensation circuit connects the back gate of said second transistor to a second potential terminal when said second transistor is OFF.

4. A gate according to claim 3, wherein said first body effect compensation circuit further comprises a fifth transistor of the first conductivity type which has a drain and source connected between said first terminal and the back gate of said first transistor and receives the first signal at a gate, and a sixth transistor of the first conductivity type which has a drain and source connected between the back gate of said first transistor and said first potential terminal and receives the second signal at a gate,

said second body effect compensation circuit further comprises a seventh transistor of the second conductivity type which has a drain and source connected between said first terminal and the back gate of said second transistor and receives the second signal at a gate, and an eighth transistor of the second conductivity type which has a drain and source connected between the back gate of said second transistor and said second potential terminal and receives the first signal at a gate, and

a back gate of said fifth transistor is connected to the back gate of said first transistor, a back gate of said sixth transistor is connected to said first potential terminal, a back gate of said seventh transistor is connected to the back gate of said second transistor, and a back gate of said eighth transistor is connected to said second potential terminal.