System and method for controlling pressure

• US 6,022,483 A
• Filed: 03/10/1998
• Issued: 02/08/2000
• Est. Priority Date: 03/10/1998
• Status: Expired due to Term

• Current Assignee: Wind River Systems Incorporated (Aptiv PLC)
• Original Assignee: Integrated Systems Incorporated (Aptiv PLC)
• Inventors: Aral, Gurcan
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): MCGUTHRY BANKS, TIMA MICHELE
• Application Number:
  US09/037,769
• Time in Patent Office: 700 Days
• Field of Search: 118/663, 118/692, 156/345, 156/345 MT, 216/59, 438/706, 137/487.5, 137/14
• US Class Current: 216/59
• CPC Class Codes: B01J 19/0006 Controlling or regulating processes controlling or regulating in general G05
• CPC Class Codes: B01J 2219/00162 controlling the pressure
• CPC Class Codes: B01J 3/006 Processes utilising sub-atmospheric pressure; Apparatus therefor
• CPC Class Codes: G05D 16/202 actuated by an electric motor
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

A system for controlling the pressure in a chamber with a computer controlled exhaust throttle valve. A characterization relationship describes the static properties of the valve geometry, valve actuation mechanism and gas flow properties. This characterization relationship can comprise a theoretical or empirical function which associates a sufficient number of valve positions with the corresponding pressure, and may be parameterized by other auxiliary variables such as inlet gas flow values, gas types and compositions. An inverse relationship between the current measurable variables of the process, such as pressure, inlet flows and other auxiliary parameters is defined. A linearization method uses the inverse relationship to modify the effect of the valve positioning on the corresponding value of pressure in such a way that the combined behavior of the process and the linearization method yields a linear relationship between a new control variable and the pressure. A linear feedback control method then controls the modified, linearized system.

Claims

1. A method of controlling pressure in a chamber, the chamber having an exhaust valve having an associated position, the method comprising the steps of:

(a) defining a pressure setpoint;

(b) measuring the pressure in the chamber;

(c) computing, as a linear function of the measured pressure and the pressure setpoint, a control variable representing a desired exhaust gas flow from the chamber;

(d) computing, as a function of the control variable and the measured pressure, a desired valve position using an inverse conductance curve function;

(e) adjusting the position of the exhaust valve based on the desired valve position so as to establish a chamber pressure associated with the pressure setpoint.

2. The method of claim 1, wherein

the control variable computed in step (c) smoothly varies over time from a starting control value to an end control value;

the desired valve position computed in step (d) smoothly varies over time from a starting position to an end position in conjunction with changes in the value of the control variable.

3. The method of claim 1, wherein the function for computing the control variable includes a direct pressure feedback term MVp, wherein M is a tuning parameter, V represents an effective chamber volume for the chamber, and p is the measured pressure.

4. The method of claim 1 wherein the desired exhaust gas flow is equal to (proportional_-- gain*pressure_-- error)+(proportional_-- gain*integral_-- gain*INTEGRAL) (pressure_-- error))+integral_-- gain*VOLUME*pressure.

5. The method of claim 4 wherein the inverse conductance curve function describes the relationship between valve position and exhaust gas flow and pressure.

6. The method of claim 5 wherein the desired valve position is computed using a lookup table.

7. The method of claim 6 further comprising the step of characterizing the valve to define a static relationship between exhaust gas flow, valve position and chamber pressure over a range of valve positions.

8. The method of claim 6 further comprising the step of characterizing the pressure response over a range of K and M values to define K and M for optimum performance.

9. The method of claim 1 wherein Z_out =K(1+(M/s))(p-r)+MVp, where Z_out is the control variable representing the desired exhaust gas flow, K and M are tuning parameters, s is the Laplacian operator, p is the measured pressure, r is the pressure setpoint, and V represents an effective chamber volume for the chamber.

10. The method of claim 7 wherein the measured pressure responds to a change in the pressure setpoint over time in a manner that depends on the value of K, and is independent of the value of M.

11. The method of claim 10 wherein a change in inlet gas flow into the chamber causes a change in pressure in the chamber over time that depends on the value of K and the value of M.

12. The method of claim 11 wherein said chamber is a semiconductor etch chamber.

13. A method of controlling pressure in a chamber, the chamber having an exhaust valve having an associated position, the method comprising the steps of:

(a) defining a pressure setpoint;

(b) measuring the pressure in the chamber;

(c) computing a desired valve position as a function of (A) a difference between the pressure setpoint and the measured pressure value and (B) a feedback term, MVp, wherein M is a tuning parameter, V represents an effective volume of the chamber, and p is the measured chamber pressure,

(d) adjusting the position of the exhaust valve based on the desired valve position so as to establish a chamber pressure associated with the pressure setpoint.

14. The method of claim 13 wherein said chamber is a semiconductor etch chamber.

15. A system for controlling the pressure in a chamber comprising:

an inflow valve in said chamber, said inflow valve for providing gases to said chamber;

a pressure sensor coupled to said chamber for measuring the pressure in said chamber;

an exhaust valve, having an associated position, in said chamber;

a valve actuator coupled to said exhaust valve for adjusting the position of said exhaust valve;

an exhaust valve controller coupled to said valve actuator, wherein said valve controller computes a control variable representing a desired exhaust gas flow as a linear function of a pressure setpoint and the measured pressure, computes a desired valve position by applying an inverse conductance curve function to the control variable, and adjusts the position of the exhaust valve based on the desired valve position so as to establish a chamber pressure associated with the pressure setpoint.

16. The system of claim 15 wherein said chamber is a semiconductor etch chamber.

17. The system of claim 15, wherein the control variable smoothly varies over time from a starting control value to an end control value;

the desired valve position smoothly varies over time from a starting position to an end position in conjunction with changes in the value of the control variable.

18. The system of claim 15, wherein the linear function for computing the control variable includes a direct pressure feedback term MVp, wherein M is a tuning parameter, V represents an effective chamber volume for the chamber, and p is the measured pressure.

19. The system of claim 15 wherein the desired exhaust gas flow is equal to (proportional_-- gain*pressure_-- error)+(proportional_-- gain*integral_-- gain*INTEGRAL) (pressure_-- error))+integral_-- gain*VOLUME*pressure.

20. The system of claim 15 wherein Z_out =K(1+(M/s))(p-r)+MVp, where Z_out is the control variable representing the desired exhaust gas flow, K and M are tuning parameters, s is the Laplacian operator, p is the measured pressure, r is the pressure setpoint, and V represents an effective chamber volume for the chamber.