Chemical vapor deposition manifold
First Claim
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1. An inlet manifold for use in a chemical vapor deposition process, comprising:
- a plate defining at least a central plurality of holes which bound an upstream to downstream gas flow path, wherein one or more of the holes have an inlet at an upstream face of the manifold, an outlet at a downstream face of the manifold and an intermediate region between the inlet and the outlet of the hole, which intermediate region has a cross-sectional area smaller than cross-sectional areas of the inlet and outlet and the inlet has a cross-sectional area smaller than the cross-sectional area of the outlet.
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Abstract
A manifold for use in a chemical vapor deposition reactor, optimized for providing effective deposition on a substrate of a specific diameter. The manifold has upstream and downstream faces and is of substantially circular shape, with a central region of the downstream face being perforated by a plurality of upstream-directed bores. The central region is substantially larger than a circle of the specific wafer diameter for which the reactor is optimized. A centrally located plurality of the bores are through-bores or holes to the upstream face of the manifold that define a gas flow path from an upstream gas source to the wafer.
515 Citations
27 Claims
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1. An inlet manifold for use in a chemical vapor deposition process, comprising:
a plate defining at least a central plurality of holes which bound an upstream to downstream gas flow path, wherein one or more of the holes have an inlet at an upstream face of the manifold, an outlet at a downstream face of the manifold and an intermediate region between the inlet and the outlet of the hole, which intermediate region has a cross-sectional area smaller than cross-sectional areas of the inlet and outlet and the inlet has a cross-sectional area smaller than the cross-sectional area of the outlet. - View Dependent Claims (2, 3, 4, 5, 6, 7, 26)
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8. An inlet manifold for use in a chemical vapor deposition reactor, comprising;
upstream and downstream faces with at least a central plurality of channels extending therebetween and bounding a gas flow path through the channels, one or more of the channels having a non-uniform co-axial circular section, wherein a first region of the channels immediately adjacent the downstream face is of uniform section and joins an upstream second region immediately adjacent the upstream face having a smaller diameter than the diameter of the first region and having an intermediate region between the first and second regions smaller than the first and second regions. - View Dependent Claims (9, 10, 11, 12)
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13. An inlet manifold for use in a chemical vapor deposition process, comprising:
a unitary metal plate having upstream and downstream faces and a generally flat central section, and having; at least a central plurality of channels which bound an upstream to downstream gas flow path, one or more of the channels having an inlet at the upstream face of the manifold and an outlet at the downstream face of the manifold; and a plurality of blind bores extending from the downstream face of the manifold and terminating prior to reaching the upstream face of the manifold. - View Dependent Claims (14)
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15. A manifold for use in chemical vapor deposition, configured for providing deposition on a wafer, comprising:
upstream and downstream faces of substantially circular shape, a region of the downstream face being perforated by a plurality of upstream-directed bores, and wherein the perforated region is substantially larger than a projected perimeter of a wafer to be processed. - View Dependent Claims (16, 17, 18, 19, 20, 27)
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21. An inlet manifold for use in a chemical vapor deposition reactor, comprising:
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upstream and downstream faces with at least a central plurality of channels extending therebetween and bounding a gas flow path through the channels; and means for reducing aluminum fluoride deposits on the downstream face of the manifold, wherein the reducing means are located at least in part at a radial distance from a central axis of the manifold greater than a radius of a substrate on which a film will be deposited by the reactor.
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22. A chemical vapor deposition reactor, comprising:
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a reactor chamber; a gas delivery system coupled to the chamber; a substrate holder disposed in the chamber; a heater coupled to the substrate holder; and a face plate, comprising;
an upper face and a lower face, the lower face in substantially parallel facing relation to an upper face of the substrate holder, a region of the lower face being perforated by a plurality of upward-directed bores, and wherein the perforated region is larger than a projected perimeter of a wafer to be processed. - View Dependent Claims (23, 24, 25)
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Specification