Method and apparatus for monitoring plasma chamber condition by observing plasma stability

• US 6,024,831 A
• Filed: 08/20/1997
• Issued: 02/15/2000
• Est. Priority Date: 08/20/1997
• Status: Expired due to Fees

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Vanguard International Semiconductor Corporation
• Inventors: Chao, Ying-Chen, Hwang, Yuan-Ko
• Primary Examiner(s): Wong, Don
• Assistant Examiner(s): Lee, Wilson
• Application Number:
  US08/915,212
• Time in Patent Office: 909 Days
• Field of Search: 156/626, 156/627.1, 156/345, 315/134, 395/23, 395/22, 395/11
• US Class Current: 216/59
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis

Abstract

A method and apparatus for monitoring condition of the plasma of a plasma process during processing is disclosed. A spectrum detector (12) detects the intensity of a predetermined wavelength of radiation produced by the plasma process. The output of the spectrum detector is sampled, filtered, and normalized. A parameter calculator (20) calculates a parameter such as velocity or acceleration of the intensity. The calculated parameter is compared to a predetermined threshold. If the parameter exceeds the predetermined threshold, an error condition is indicated.

Claims

1. A method of monitoring plasma chamber condition of a plasma process, the method comprising:

detecting an intensity of a predetermined wavelength of radiation produced by the plasma process to electrically generate an output signal;

generating a parameter representing a change rate of the output signal;

comparing the parameter to a predetermined threshold, said parameter comprising a velocity value representing the change rate of the output signal and an acceleration value representing a change rate of the velocity value; and

indicating an abnormal condition when the parameter exceeds the predetermined threshold.

2. The method according to claim 1, wherein the intensity of the predetermined wavelength of radiation is detected by a spectrum detector.

3. The method according to claim 1, further comprising sampling the output signal to generate a digital signal.

4. The method according to claim 3, wherein the sampling is performed by an analog-to-digital converter.

5. The method according to claim 3, further comprising filtering the digital signal to reduce noise and generate a filtered signal.

6. The method according to claim 5, wherein the filtering includes averaging the digital signal.

7. The method according to claim 5, further comprising normalizing the filtered signal to reduce signal decay, thereby generating a normalized signal.

8. The method according to claim 1, further comprising:

sampling the output signal to generate a digital signal;

averaging the digital signal to reduce noise and generate a filtered signal; and

normalizing the filtered signal to reduce decay, thereby generating a normalized signal.

9. A method of monitoring chamber condition of a plasma process, the method comprising:

detecting an intensity of a predetermined wavelength of radiation produced by the plasma process to electrically generate an output signal;

sampling the output signal to generate a digital signal representing the output signal;

filtering the digital signal to reduce noise, thereby generating a filtered signal;

normalizing the filtered signal to reduce signal decade, thereby generating a normalized signal;

generating a parameter representing a change rate of the normalized signal, said parameter comprising a velocity value representing the change rate of the normalized signal and an acceleration value representing the change rate of the velocity value;

comparing said parameter to a predetermined threshold; and

indicating an abnormal condition when the parameter exceeds the predetermined threshold.

10. The method according to claim 9, wherein the filtering step comprises averaging the digital signal.

11. An apparatus for monitoring chamber condition of a plasma process, the apparatus comprising:

a plasma chamber for performing the plasma process, the plasma process producing radiation having an intensity and a predetermined wavelength;

means for detecting the intensity of the predetermined wavelength of radiation and for electrically generating an output signal;

means for generating a parameter representing a change rate of the output signal;

means for comparing the parameter with a predetermined threshold, said parameter comprising a velocity value representing the change rate of the output signal and an acceleration value representing the change rate of the velocity value; and

an indicator that indicates an abnormal condition when the parameter exceeds the predetermined threshold.

12. The apparatus according to claim 11, further comprising means for sampling the output signal to generate a digital signal representing the output signal.

13. The apparatus according to claim 12, further comprising means for filtering the digital signal to reduce noise, thereby generating a filtered signal.

14. The apparatus according to claim 13, further comprising means for normalizing the filtered signal to reduce signal decade, thereby generating a normalized signal.

15. The apparatus according to claim 11, wherein the means for filtering is further configured to average the digital signal.

16. An apparatus for monitoring plasma chamber condition of a plasma process, the apparatus comprising:

a plasma chamber for performing the plasma process, the plasma process producing radiation having an intensity and a predetermined wavelength;

a spectrum detector coupled to the plasma chamber, the spectrum detector detecting the intensity of the predetermined wavelength of radiation and electrically generating an output signal;

an analog-to-digital converter coupled to receive the output signal, the analog-to-digital converter generating a digital signal representing the output signal;

a filter coupled to the analog-to-digital converter, the filter filtering the digital signal to reduce noise, the filter generating a filtered signal;

a normalizer coupled to the filter, the normalizer normalizing the filtered signal to reduce signal decay, the normalizer generating a normalized signal;

a parameter calculator coupled to the normalizer, the parameter calculator generating a parameter representing a change rate of the normalized signal, said parameter comprising a velocity value representing the change rate of the output signal and an acceleration value representing the change rate of the velocity value; and

a comparator coupled to the parameter calculator, the comparator comparing the parameter to a predetermined threshold, an abnormal condition being determined when the parameter exceeds the predetermined threshold.

17. The apparatus according to claim 16, wherein the filter is configured to filter the digital signal by averaging.

18. A method of monitoring plasma chamber condition of a plasma process, the method comprising:

detecting an intensity of a predetermined wavelength of radiation produced by the plasma process to electrically generate an output signal;

sampling the output signal to generate a digital signal;

filtering the digital signal to reduce noise and generate a filtered signal by averaging the digital signal;

generating a parameter representing a change rate of the output signal;

comparing the parameter to a predetermined threshold; and

indicating an abnormal condition when the parameter exceeds the predetermined threshold.

19. The method according to claim 18, wherein the intensity of the predetermined wavelength of radiation is detected by a spectrum detector.

20. The method according to claim 18, further comprising normalizing the filtered signal to reduce signal decay, thereby generating a normalized signal.