Spacer-based antifuse structure for low capacitance and high reliability and method of fabrication thereof

• US 6,025,637 A
• Filed: 02/10/1998
• Issued: 02/15/2000
• Est. Priority Date: 11/07/1994
• Status: Expired due to Fees

• Current Assignee: Lattice Semiconductor Corporation
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Mehta, Sunil D.
• Primary Examiner(s): CARROLL, JAMES J
• Application Number:
  US09/023,669
• Time in Patent Office: 735 Days
• Field of Search: 257/530, 257/50, 257/773
• US Class Current: 257/530
• CPC Class Codes: H01L 23/5252 comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present antifuse includes a base having a first electrode thereon which defines a top surface and a side surface. Antifuse material is disposed on the first electrode on at least a portion of the top surface and at least a portion of the side surface, with a second electrode on the antifuse material. Due to this configuration, defect problems in etching oxide as part of the antifuse structure are avoided, and meanwhile capacitance of the device is very low.

Claims

1. An antifuse structure comprising:

a base;

a first electrode formed on said base, said first electrode having above said base a top surface and a pair of side surfaces, said top surface having a width;

antifuse material formed over said first electrode and disposed over the top surface of said first electrode and said side surfaces of said first electrode, so that at least a portion of the functioning antifuse material lies along a first one of the side surfaces of said first electrode;

a second electrode laterally offset from said first and spaced from said first electrode by said antifuse material, said second electrode laterally overlapping only a portion of said top surface of said first electrode by a predetermined amount less than the width of the top surface of said first electrode, and a portion of the second electrode is disposed alone but spaced from at least a portion of the first side surface; and

said first electrode has a contact contacting said top surface through said antifuse material and said second electrode has a separate contact laterally offset from and not overlapping said first electrode.

2. The antifuse structure of claim 1 wherein said base is substantially planar and said antifuse material is formed over said first electrode and onto said base.

3. The antifuse structure of claim 2 wherein said second electrode overlaps said portion of said first electrode top surface over said first side surface portion having said antifuse material disposed thereover.

4. The antifuse structure of claim 1 wherein said second electrode is formed from a plurality of metal layers.

5. The antifuse structure of claim 1 wherein a portion of said antifuse material is in contact with said base.

6. The antifuse structure of claim 1 wherein a portion of the second electrode is disposed along but spaced from at least a portion of the top surface of the first electrode, so as to laterally overlap by said predetermined amount said first electrode.