Apparatus for equalizing signal parameters in flip chip redistribution layers
First Claim
1. A redistribution layer having a patterned metallization layer for use in a flip chip integrated circuit device, comprising:
- a plurality of slot pads arranged along a periphery of the redistribution layer, the plurality of slot pads being formed from the patterned metallization layer;
an array of bump pads being arranged in an inner portion of the redistribution layer such that the plurality of slot pads surround the array of bump pads, and the array of bump pads being formed from the patterned metallization layer, wherein each bump pad of the array of bump pads has a surface area that is selected to substantially equalize a capacitance parameter associated with an interconnection between a first selected one of the plurality of slot pads and a first bump pad of the array of bump pads; and
a plurality of traces formed from the patterned metallization layer being configured to interconnect the plurality of slot pads to the array of bump pads, such that each of the traces has a width that is selected to substantially equalize a resistance parameter associated with each of the plurality of traces.
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Accused Products
Abstract
Disclosed is a redistribution layer having a patterned metallization layer for use in a flip chip integrated circuit device and a method for making the same. The redistribution layer includes a plurality of slot pads arranged along a periphery of the redistribution layer. The plurality of slot pads are formed from the patterned metallization layer. An array of bump pads are arranged in an inner portion of the redistribution layer such that the plurality of slot pads surround the array of bump pads, and the array of bump pads are formed from the patterned metallization layer. The redistribution layer further includes a plurality of traces that are formed from the patterned metallization layer and are configured to interconnect the plurality of slot pads to the array of bump pads. Each of the traces has a width that is selected to substantially equalize a resistance parameter associated with each of the plurality of traces. Additionally, each trace may include a bump pad area and possibly capacitance extending stubs that may be custom sized to substantially equalize a capacitance parameter associated with each of the plurality of traces.
55 Citations
30 Claims
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1. A redistribution layer having a patterned metallization layer for use in a flip chip integrated circuit device, comprising:
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a plurality of slot pads arranged along a periphery of the redistribution layer, the plurality of slot pads being formed from the patterned metallization layer; an array of bump pads being arranged in an inner portion of the redistribution layer such that the plurality of slot pads surround the array of bump pads, and the array of bump pads being formed from the patterned metallization layer, wherein each bump pad of the array of bump pads has a surface area that is selected to substantially equalize a capacitance parameter associated with an interconnection between a first selected one of the plurality of slot pads and a first bump pad of the array of bump pads; and a plurality of traces formed from the patterned metallization layer being configured to interconnect the plurality of slot pads to the array of bump pads, such that each of the traces has a width that is selected to substantially equalize a resistance parameter associated with each of the plurality of traces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A redistribution layer formed from a patterned metallization layer, comprising:
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a plurality of slot pads arranged along a periphery of the redistribution layer, the plurality of slot pads being formed from the patterned metallization layer, wherein a first slot pad has a first slot pad capacitance value and a second slot pad has a second slot pad capacitance value; an array of bump pads being arranged in an inner portion of the redistribution layer such that the plurality of slot pads surround the array of bump pads, and the array of bump pads being formed from the patterned metallization layer, wherein a first bump pad of the array of bump pads has a first surface area having a first bump pad capacitance value and a second bump pad of the array of bump pads has a second surface area having a second bump pad capacitance value; a plurality of traces having a plurality of widths formed from the patterned metallization layer being configured to interconnect the plurality of slot pads to the array of bump pads, wherein a first trace that electrically connects the first bump pad to the first slot pad has a first trace capacitance and a first length, and a second trace that electrically connects the second bump pad to the second slot pad has a second trace capacitance value and a second length, the first length being different than the second length, and wherein the first surface area of the first bump pad is sized such that the first bump pad capacitance value, plus the first trace capacitance value, plus the first slot pad capacitance value substantially equals the second bump pad capacitance value, plus the second trace capacitance value, plus the second slot pad capacitance value. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A redistribution layer formed from a patterned metallization layer, comprising:
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a plurality of slot pads arranged along a periphery of the redistribution layer, the plurality of slot pads being formed from the patterned metallization layer, wherein a first slot pad has a first slot pad capacitance value and a second slot pad has a second slot pad capacitance value; an array of bump pads being arranged in an inner portion of the redistribution layer such that the plurality of slot pads surround the array of bump pads, and the array of bump pads being formed from the patterned metallization layer, wherein a first bump pad of the array of bump pads has a first surface area having a first bump pad capacitance value and a second bump pad of the array of bump pads has a second surface area having a second bump pad capacitance value; a plurality of traces having a plurality of widths formed from the patterned metallization layer being configured to interconnect the plurality of slot pads to the array of bump pads, wherein a first trace that electrically connects the first bump pad to the first slot pad has a first trace capacitance and a first length, and a second trace that electrically connects the second bump pad to the second slot pad has a second trace capacitance value and a second length, the first length being different than the second length; and a capacitance extending stub located on the first trace, and wherein an area of the capacitance extending stub and the first surface area of the first bump pad are sized such that the first bump pad capacitance value, plus the first trace capacitance value, plus the first slot pad capacitance value substantially equals the second bump pad capacitance value, plus the second trace capacitance value, plus the second slot pad capacitance value. - View Dependent Claims (30)
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Specification