Transferred flexible integrated circuit

• US 6,027,958 A
• Filed: 07/11/1996
• Issued: 02/22/2000
• Est. Priority Date: 07/11/1996
• Status: Expired due to Term

• Current Assignee: Callahan Cellular LLC (Intellectual Ventures LLC)
• Original Assignee: Kopin Corporation
• Inventors: Vu, Duy-Phach, Dingle, Brenda, Cheong, Ngwe K.
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US08/680,210
• Time in Patent Office: 1,321 Days
• Field of Search: 438/110, 438/113, 438/455, 438/457, 438/459, 438/577, 257/679
• US Class Current: 438/110
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 23/5387 Flexible insulating substrates H01L23/5388 takes precedence
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 25/0652 the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H05K 1/0393 Flexible materials H05K1/038 takes precedence; specific organic compositions are classified in H05K1/0313 and subgroups
• CPC Class Codes: H05K 1/16 incorporating printed electric components, e.g. printed resistor, capacitor, inductor
• CPC Class Codes: H05K 3/20 by affixing prefabricated conductor pattern H05K1/187, H05K3/046, H05K3/4658, H05K3/4682 takes precedence

Abstract

Integrated circuits for use in electronic devices requiring high density packaging are fabricated to provide highly flexible and ultra-thin devices having a variety of applications. The flexible circuits have dimensions up to several centimeters in surface area and thicknesses of a few microns. These circuits are fabricated using transfer techniques which include the removal of VLSI circuits from silicon wafers and mounting of the circuits on application specific substrates.

Claims

1. A method of fabricating a flexible circuit device comprising:

providing a silicon-on-insulator structure including a silicon device layer or an insulating layer that extends over a semiconductor substrate;

fabricating an integrated circuit with the device layer; and

transferring the integrated circuit from the semiconductor substrate to a flexible material, the integrated circuit having a plurality of spaced interconnected semiconductor regions that form a flexible integrated circuit.

2. The method of claim 1 further comprising sealing the flexible integrated circuit with a sealant.

3. The method of claim 1 further comprising forming an active matrix liquid crystal display with the flexible integrated circuit.

4. The method of claim 1 wherein the transferring step further comprises adhering the integrated circuit to a second substrate with an adhesive layer, removing a portion of the semiconductor substrate and releasing the second substrate from the integrated circuit.

5. The method of claim 1 wherein the silicon-on-insulator structure comprises a single crystal silicon layer on a silicon dioxide layer that extends over a silicon substrate.

6. The method of claim 1 wherein the flexible material comprises a polymeric material.

7. The method of claim 1 wherein the step of the integrated circuit further comprises device processing on an exposed second side of the integrate circuit.

8. A method of fabricating a thin flexible circuit device comprising:

providing a first substrate having a semiconductor material on an insulating layer that extends over the first substrate;

fabricating an integrated circuit with the semiconductor material;

providing a second substrate having an adhesive layer that is separated from the first substrate with a separation layer;

transferring the integrated circuit and insulating layer from the first substrate to the second substrate such that the integrated circuit adheres to the adhesive layer;

removing portions of the adhesive layer to expose the integrated circuit therein; and

removing the second substrate at the separation layer to provide a flexible integrated circuit.

9. The method of claim 8 further comprising forming a separation layer including copper.

10. The method of claim 8 the forming step includes forming a copper layer that is less than 700 angstroms in thickness.

11. The method of claim 8 further comprising forming the adhesive layer that is less than 15 microns in thickness.

12. The method of claim 8 further comprising forming the flexible integrated circuit with less than 4 microns in thickness.

13. The method of claim 8 further comprising forming the flexible integrated circuit with less than 20 microns in thickness.

14. The method of claim 8 wherein the second substrate is glass.

15. A method of fabricating a thin film flexible circuit device comprising:

providing a semiconductor substrate;

fabricating an integrated circuit with the semiconductor substrate;

providing a second substrate having an adhesive layer separated by a separation layer;

transferring the integrated circuit from the substrate to the second substrate such that a first surface of the integrated circuit adheres to the adhesive layer;

forming an intermediate structure that exposes a second surface of the integrated circuit;

providing a third substrate having a second adhesive layer;

transferring the intermediary structure to the third substrate such that the semiconductor material adheres to the second adhesive layer; and

removing the second substrate to expose the first side of the integrated circuit; and

sealing the integrated circuit to form a flexible integrated circuit structure.

16. The method of claim 15 wherein the separation layer is amorphous silicon.

17. The method of claim 15 wherein the adhesive layer is less than 15 microns in thickness.

18. The method of claim 15 wherein the second adhesive layer is less 15 microns in thickness.

19. The method of claim 15 further comprising removing the separation and adhesive layers to expose the integrated circuit devices to provide a flexible integrated circuit.

20. The method of claim 19 wherein the flexible integrated circuit is less than 20 microns of thickness.

21. The method of claim 15 wherein the flexible integrated circuit is less than 4 microns of thickness.

22. The method of claim 15 wherein the second substrate is glass.

23. The method of claim 15 wherein the third substrate is Teflon.

24. The method claim 15 wherein the separation layer is copper.

25. The method of claim 24 wherein the copper is less than 700 angstroms in thickness.

26. A smart card flexible circuit device comprising:

a silicon semiconductor material on a silicon dioxide layer;

an integrated circuit fabricated with the silicon semiconductor material;

an encapsulating layer to seal the integrated circuit; and

a flexible support layer adhered to the integrated circuit.

27. The circuit of claim 26 wherein the support layer is copper.

28. The circuit of claim 26 wherein the support layer is Teflon®

.

29. The circuit of claim 26 wherein the support layer is plastic.

30. The circuit of claim 26 wherein the integrated circuit comprises a plurality of spaced semiconductor regions on the flexible support layer that are electrically connected.

31. The circuit of claim 26 further comprising an adhesive layer between the support layer and the integrated circuit wherein the adhesive layer is less than 15 microns in thickness.

32. The circuit of claim 26 wherein the integrated circuit is less than 20 microns thick.

33. The circuit of claim 26 wherein the integrated circuit is less than 4 microns thick.

34. The circuit claim 26 further comprising a copper separation layer.

35. The circuit of claim 34 wherein the copper is less than 700 angstroms thick.

36. A flexible circuit comprising:

a flexible layer of semiconductor material having a first integrated circuit formed with the first layer of semiconductor material;

a second layer of semiconductor material having a second integrated circuit formed with the second layer of semiconductor material;

a separation layer between the first integrated circuit and the second integrated circuit, the first integrated circuit being electrically connected to the second integrated circuit,

an encapsulating layer to seal the flexible circuit; and

a flexible support layer adhered to the flexible circuit.

37. The circuit of claim 36 wherein the support layer is copper.

38. The circuit of claim 36 wherein the support layer is Teflon.

39. The circuit of claim 36 wherein the support layer is plastic.

40. The circuit of claim 36 wherein each integrated circuit comprises a plurality of spaced semiconductor regions on the flexible support layer that are electrically connected.