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CMOS semiconductor devices and method of formation

  • US 6,027,961 A
  • Filed: 06/30/1998
  • Issued: 02/22/2000
  • Est. Priority Date: 06/30/1998
  • Status: Expired due to Term
First Claim
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1. A method for forming a semiconductor device comprising the steps of:

  • providing a semiconductor substrate, the semiconductor substrate having a first region of a first conductivity type and a second region of a second conductivity type;

    forming a first conductive nitride layer overlying the first region of the semiconductor substrate;

    forming a second conductive nitride layer overlying the second region of the semiconductor substrate;

    patterning the first conductive nitride layer to form a first gate electrode overlying the first region, the first gate electrode having a first work function value; and

    patterning the second conductive nitride layer to form a second gate electrode overlying the second region, the second gate electrode having a second work function value, wherein the second work function value is less than the first work function value.

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