CMOS semiconductor devices and method of formation
First Claim
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1. A method for forming a semiconductor device comprising the steps of:
- providing a semiconductor substrate, the semiconductor substrate having a first region of a first conductivity type and a second region of a second conductivity type;
forming a first conductive nitride layer overlying the first region of the semiconductor substrate;
forming a second conductive nitride layer overlying the second region of the semiconductor substrate;
patterning the first conductive nitride layer to form a first gate electrode overlying the first region, the first gate electrode having a first work function value; and
patterning the second conductive nitride layer to form a second gate electrode overlying the second region, the second gate electrode having a second work function value, wherein the second work function value is less than the first work function value.
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Abstract
In one embodiment, a metal layer (18) is formed over a gate dielectric layer (14, 16) on a semiconductor substrate. A masking layer (20) is patterned to mask a portion of the metal layer (18). An exposed portion of the metal layer (18) is nitrided to form a conductive nitride layer (24). The masking layer (20) is removed and the conductive nitride layer (24) is patterned to form a first gate electrode (23) having a first work function value, and the conductive layer (18) is patterned to form a second gate electrode (25) having a second work function value which is different from that of the first work function value.
347 Citations
17 Claims
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1. A method for forming a semiconductor device comprising the steps of:
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providing a semiconductor substrate, the semiconductor substrate having a first region of a first conductivity type and a second region of a second conductivity type; forming a first conductive nitride layer overlying the first region of the semiconductor substrate; forming a second conductive nitride layer overlying the second region of the semiconductor substrate; patterning the first conductive nitride layer to form a first gate electrode overlying the first region, the first gate electrode having a first work function value; and patterning the second conductive nitride layer to form a second gate electrode overlying the second region, the second gate electrode having a second work function value, wherein the second work function value is less than the first work function value. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for forming a semiconductor device comprising the steps of:
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providing a semiconductor substrate, the semiconductor substrate having a first region of a first conductivity type and a second region of a second conductivity type; forming a conductive layer overlying the semiconductor substrate, the conductive layer having a first portion overlying the first region and a second portion overlying the second region; nitriding the first portion of the conductive layer to form a conductive nitride layer overlying the first region; patterning the conductive nitride layer to form a first gate electrode overlying the first region; and patterning the conductive layer to form a second gate electrode overlying the second region. - View Dependent Claims (8, 9, 10, 11)
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12. A method for forming a semiconductor device comprising the steps of:
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providing a semiconductor substrate, the semiconductor substrate having a first region of a first conductivity type and a second region of a second conductivity type; forming a metal layer overlying the semiconductor substrate, the metal layer having a first portion overlying the first region and a second portion overlying the second region; nitriding the first portion of the metal layer to form a first metal nitride layer overlying the first region; nitriding the second portion of the metal layer to form a second metal nitride layer overlying the second region; patterning the first metal nitride layer to form a first gate electrode overlying the first region, the first gate electrode having a first work function value; and patterning the second metal nitride layer to form a second gate electrode overlying the second region, the second gate electrode having a second work function value, wherein the second work function value is less than the first work function value. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification