Method of fabricating semiconductor device with MIS structure

• US 6,027,977 A
• Filed: 05/14/1998
• Issued: 02/22/2000
• Est. Priority Date: 05/14/1997
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Mogami, Toru
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Ghyka, Alexander G.
• Application Number:
  US09/078,811
• Time in Patent Office: 649 Days
• Field of Search: 438/287, 438/291, 438/301, 438/303, 438/305, 438/769, 438/786
• US Class Current: 438/287
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A fabrication method of a semiconductor device with the MIS structure is provided, which prevents the boron penetration phenomenon from occurring even if a gate insulator film is as thin as approximately 3 nm or less. After a silicon nitride film is formed on a semiconductor substrate, oxygen is doped into the silicon nitride film by a suitable process such as a thermal oxidation, ion implantation or plasma doping process, thereby forming an oxygen-doped silicon nitride film having an oxygen-rich region that extends along an interface between the oxygen-doped silicon nitride film and the substrate. The oxygen-rich region is higher in oxygen concentration than the remainder of the oxygen-doped silicon nitride film. At least part of the oxygen-doped silicon nitride film serves as a gate insulator film of a MISFET. Next, a gate electrode of the MISFET is formed on the oxygen-doped silicon nitride film. A dopant is selectively introduced into the substrate to form a pair of source/drain regions of the MISFET in the substrate at each side of the boron-doped gate electrode. Finally, the substrate is heat-treated to activate or anneal the dopant introduced into the substrate.

Claims

1. A method of fabricating a semiconductor device, comprising the steps of:

(a) forming a silicon nitride film on a semiconductor substrate;

(b) ion-implanting oxygen into said silicon nitride film and by heat-treating said oxygen-implanted silicon nitride film, thereby forming an oxygen-doped silicon nitride film having an oxygen-rich region that extends along an interface between said oxygen-doped silicon nitride film and said substrate;

said oxygen-rich region being higher in oxygen concentration than a remainder of said oxygen-doped silicon nitride film;

at least part of said oxygen-doped silicon nitride film serving as a gate insulator film of a MISFET;

(c) forming a gate electrode of said MISFET on said oxygen-doped silicon nitride film;

(d) selectively introducing a dopant into said substrate to form a pair of source/drain regions of said MISFET in said substrate at each side of said gate electrode; and

(e) heat-treating said substrate to activate said dopant introduced into said substrate in said step (d).

2. A method as claimed in claim 1, wherein said heat treatment of said oxygen-implanted silicon nitride film is performed in an oxygen-containing atmosphere.

3. A method as claimed in claim 2, wherein said heat treatment of said oxygen-implanted silicon nitride film is performed at a temperature of 700 to 1100°

C.

4. A method as claimed in claim 1, wherein said heat treatment of said oxygen-implanted silicon nitride film is performed in a nitrogen-containing atmosphere.

5. A method as claimed in claim 4, wherein said heat treatment of said oxygen-implanted silicon nitride film is performed at a temperature of 700 to 1100°

C.

6. A method as claimed in claim 1, wherein said silicon nitride film is formed by thermally nitriding said substrate in an atmosphere containing one selected from the group consisting of NH₃, NO, and NO₂.

7. A method as claimed in claim 1, wherein said silicon nitride film in the step (a) has a thickness of 1 to 5 nm.

8. A method as claimed in claim 1, wherein said oxygen-doped silicon nitride film in the step (b) has a thickness of 1 to 5 nm.

9. The method as claimed in claim 1, wherein said oxygen-doped silicon nitride film in the step (b) is implanted using an acceleration voltage of about 20 keV.

10. A method of fabricating a semiconductor device, comprising the steps of:

(a) forming a silicon nitride film on a semiconductor substrate;

(b) plasma-doping oxygen into said silicon nitride film and heat-treating said oxygen-implanted silicon nitride film, thereby forming an oxygen-doped silicon nitride film having an oxygen-rich region that extends along an interface between said oxygen-doped silicon nitride film and said substrate;

said oxygen-rich region being higher in oxygen concentration than a remainder of said oxygen-doped silicon nitride film;

wherein at least part of said oxygen-doped silicon nitride film serves as a gate insulator film of a MISFET;

(c) forming a gate electrode of said MISFET on said oxygen-doped silicon nitride film;

(d) selectively introducing a dopant into said substrate to form a pair of source/drain regions of said MISFET in said substrate at each side of said gate electrode; and

(e) heat-treating said substrate to activate said dopant introduced into said substrate in said step (d).

11. The method as claimed in claim 10, wherein said heat treatment of said oxygen-implanted silicon nitride film is performed in an atmosphere containing one selected from the group consisting of an oxygen gas and a mixture of oxygen and hydrogen gases.

12. The method as claimed in claim 11, wherein said heat treatment of said oxygen-implanted silicon nitride film is performed at a temperature of 700 to 1100°

C.

13. The method as claimed in claim 10, wherein said silicon nitride film is formed by thermally nitriding said substrate in an atmosphere containing one selected from the group consisting of NH₃, NO, and NO₂.

14. The method as claimed in claim 10, wherein said silicon nitride film in the step (a) has a thickness of 1 to 5 nm.

15. The method as claimed in claim 10, wherein said oxygen-doped silicon nitride film in the step (b) has a thickness of 1 to 5 nm.

16. The method as claimed in claim 10, wherein said oxygen-doped silicon nitride film in the step (b) is plasma-doped using a bias voltage of about -1.0 keV.