High density plasma source for semiconductor processing
First Claim
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1. A plasma source comprising:
- a first loop forming a first layer; and
a second loop forming a second layer electrically connected to and spaced apart from said first loop, wherein subsequent conducting loops are electrically connected to loops in layers other than their own.
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Abstract
An apparatus for producing a plasma (70) within a vacuum chamber (50) comprising a high density plasma source (10) is disclosed wherein the source (10) comprises a top layer (13) and a bottom layer (11) electrically connected to and spaced apart from each other, in a manner to adjust the fields generated by the source (10), hence the uniformity of the plasma (70), wherein the top and bottom layers (13, 11) are formed by a plurality of conductive loops.
89 Citations
39 Claims
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1. A plasma source comprising:
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a first loop forming a first layer; and a second loop forming a second layer electrically connected to and spaced apart from said first loop, wherein subsequent conducting loops are electrically connected to loops in layers other than their own. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. An apparatus for generating a uniform plasma in a chamber by producing magnetic fields of high symmetry comprising:
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a first layer of loops; and a second layer of loops electrically connected to and spaced apart from said first layer of loops, wherein alternating loops are electrically connected to loops in layers other than their own. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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Specification