Method for igniting a plasma inside a plasma processing reactor

• US 6,028,286 A
• Filed: 12/30/1998
• Issued: 02/22/2000
• Est. Priority Date: 12/30/1998
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Cook, Joel M., Chen, Jian J., Wicker, Thomas E.
• Primary Examiner(s): PASCHALL, MARK H
• Application Number:
  US09/223,692
• Time in Patent Office: 419 Days
• Field of Search: 219/121.43, 219/121.41, 219/121.59, 219/121.52, 219/123, 219/121.4, 219/121.57, 204/298.21, 204/298.38, 156/345, 118/723 I
• US Class Current: 219/121.53
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3266 Magnetic control means

Abstract

The invention relates to a plasma processing reactor for processing a substrate. The plasma processing reactor includes a process chamber. The plasma processing reactor further includes an inductive coil configured to be coupled to a RF power source having a RF frequency wherein the inductive coil generates an electric field inside of the process chamber. The plasma processing reactor additionally includes a magnetic field producing device configured to produce a magnetic field inside the process chamber in proximity of the electric field.

Claims

1. A plasma processing reactor for processing a substrate, comprising:

a process chamber within which a plasma can be both ignited and sustained for said processing;

a RF power source having a RF frequency;

an inductive coil coupled to said RF power source and configured to generate an electric field inside of said process chamber; and

a magnetic field producing apparatus configured to produce a magnetic field inside said process chamber in proximity of said electric field, said magnetic field being effective to promote ignition of said plasma within said process chamber, said magnetic field being activated to ignite said plasma and then deactivated after said plasma is ignited within said process chamber.

2. The plasma processing reactor of claim 1 wherein said RF frequency is about 13.5 MHz.

3. The plasma processing reactor of claim 1 wherein said magnetic field producing apparatus is a solenoid;

said solenoid being powered by about 200 volt DC power.

4. The plasma processing reactor of claim 1 wherein said magnetic field has a magnetic flux in the range of about 25 to about 500 Gauss.

5. The plasma processing reactor of claim 1 wherein said magnetic field producing apparatus activates said magnetic field only for a period of time sufficient to ignite a plasma in said process chamber.

6. The plasma processing reactor of claim 1 wherein said magnetic field producing apparatus is placed between adjacent rings of said inductive coil.

7. The plasma processing reactor of claim 1 wherein said RF power source is set at a level suitable for said processing when said magnetic field producing apparatus is activated.

8. The plasma processing reactor of claim 1 wherein a chamber pressure within said plasma processing reactor is set at a level suitable for said processing when said magnetic field producing apparatus is activated.

9. The plasma processing reactor of claim 1 wherein said magnetic field is not activated during processing of said substrate.

10. The plasma processing reactor of claim 1 wherein said magnetic field producing apparatus is arranged to concentrate said magnetic field in a predetermined region of said electric field.

11. The plasma processing reactor of claim 10 wherein said predetermined region is where the electrons of said electric field are initially accelerated by said inductive coil.

12. The plasma processing reactor of claim 10 wherein said predetermined region is at a location inside said process chamber where the electric field line concentration of said electric field is the highest.

13. The plasma processing reactor of claim 1 wherein said magnetic field producing apparatus is disposed proximate a high voltage point of said inductive electrode.

14. The plasma processing reactor of claim 1 wherein said magnetic field is not symmetrically disposed within said process chamber.

15. A plasma processing reactor for processing substrates inside a process chamber, comprising:

means for generating an electric field inside said process chamber of said plasma processing reactor;

means, disposed externally of said process chamber, for generating a magnetic field in proximity of said electric field inside said process chamber, said magnetic field being effective to promote the ignition of a plasma within said process chamber; and

activation means, coupled to said means for generating said magnetic field, for controlling an activation of said magnetic field, said magnetic field being activated to ignite said plasma and then deactivated after said plasma is ignited within said process chamber.

16. The plasma processing reactor of claim 15 wherein said means for generating said electric field is an inductive coil coupled to an RF power source.

17. The plasma processing reactor of claim 15 wherein said means for generating said magnetic field is a solenoid coupled to a DC power source.

18. The plasma processing reactor of claim 15 wherein said magnetic field has a magnetic flux in the range of about 25 to about 500 Gauss during ignition of a plasma inside said process chamber.

19. The plasma processing reactor of claim 15 wherein said activation means activates said magnetic field only for a period of time sufficient to ignite a plasma inside said process chamber.

20. The plasma processing reactor of claim 15 wherein said means for generating said magnetic field is placed in proximity of said means for generating said electric field.

21. The plasma processing reactor of claim 15 wherein said means for generating said electric field is set at a level suitable for said processing when said magnetic field is present to promote ignition of a plasma within said process chamber.

22. The plasma processing reactor of claim 15 wherein a chamber pressure inside said process chamber is set at a level suitable for said processing when said magnetic field is present to promote ignition of a plasma within said process chamber.

23. In a plasma processing reactor, a method of igniting a plasma inside a process chamber, comprising:

providing an inductive coil;

coupling an RF power source to said inductive coil to provide RF power to said inductive coil, thereby generating an electric field inside said process chamber;

providing a magnetic field producing apparatus disposed outside of said process chamber, said magnetic field producing apparatus being configured to produced a magnetic field inside said process chamber in proximity of said electric field;

generating said magnetic field with said magnetic field producing apparatus to promote ignition of a plasma within said process chamber; and

removing said magnetic field from said process chamber when said plasma is ignited within said process chamber.

24. The method of claim 23 wherein said RF power has an RF frequency of about 13.5 MHz.

25. The method of claim 23 wherein said magnetic field producing apparatus is a solenoid coupled to a DC power source.

26. The method of claim 23 wherein said magnetic field has a magnetic flux in the range of about 25 to about 500 Gauss.

27. The method of claim 23 wherein said generating is only for a period of time sufficient to ignite said plasma in said process chamber.

28. The method of claim 23 wherein said magnetic field producing apparatus is placed between adjacent rings of said inductive coil.

29. The method of claim 23 wherein said RF power source is set at a level suitable for said processing when said magnetic field is generated within said process chamber to promote ignition of said plasma within said process chamber.

30. The method of claim 23 wherein a chamber pressure within said plasma processing reactor is set at a level suitable for said processing when said magnetic field is generated within said process chamber to promote ignition of said plasma within said process chamber.