Methods and circuitry for correcting temperature-induced errors in microbolometer focal plane array

• US 6,028,309 A
• Filed: 02/10/1998
• Issued: 02/22/2000
• Est. Priority Date: 02/11/1997
• Status: Expired due to Term

• Current Assignee: Teledyne FLIR LLC (Teledyne Technologies Incorporated)
• Original Assignee: Indigo Systems Corporation (Telecom Eireann)
• Inventors: Woolaway, James T., Parrish, William J.
• Primary Examiner(s): Hannaher, Constantine
• Assistant Examiner(s): GAGLIARDI, ALBERT J
• Application Number:
  US09/021,714
• Time in Patent Office: 742 Days
• Field of Search: 250/338.1, 250/338.4, 250/349, 250/370.08, 250/252.1 A, 250/332
• US Class Current: 250/332
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: G01J 5/22 Electrical features thereof
• CPC Class Codes: H04N 25/671 for non-uniformity detection or correction
• CPC Class Codes: H04N 25/673 by using reference sources
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

Correction for temperature-induced non-uniformities in the response characteristics of the microbolometers in an infrared focal plane array (FPA) is performed by applying a non-uniform corrective bias to the individual microbolometers. The corrective bias is applied either before or during the bias or integration period during which the detectors are sampled. The bias-correction can be applied to two-dimensional detector multiplexers at each column amplifier input, the reference potential for each column amplifier or the voltage supply for each detector element. The magnitude of each corrective bias is determined by calibrating the detectors at different temperatures and different levels of incident infrared radiation. According to another aspect of this invention, a microbolometer which is thermally-shorted to the substrate on which the read out integrated circuit (ROIC) is formed is used along with the sensing microbolometer to compensate for variations in temperature. In some embodiments, an adjustable voltage is applied to the thermally-shorted microbolometer to provide an offset correction. Circuitry for providing on-ROIC substrate temperature control is also described. This invention allows the operation of a microbolometer FPA over a wider range of device substrate temperatures and thereby significantly reduces the complexity and cost of the system as compared with the conventional technique of cooling the FPA.

Claims

1. A microbolometer detector circuit comprising:

a substrate;

a first microbolometer detector attached to but substantially thermally isolated from said substrate;

a second microbolometer detector thermally shorted to said substrate, said second microbolometer detector being for providing temperature compensation for said first microbolometer detector;

a first voltage source, said first and second microbolometers being connected in series in a conduction path supplied by said first voltage source;

a transistor connected between said first and second microbolometer detectors in said conduction path, a gate of said transistor being connected to a second voltage source; and

a variable voltage source coupled to said second microbolometer detector for providing a variable voltage across said second microbolometer detector.

2. The microbolometer detector circuit of claim 1 wherein said variable voltage source comprises a digital-to-analog converter connected to a negative terminal of said second microbolometer detector.

3. The microbolometer detector circuit of claim 1 wherein said variable voltage source comprises a second transistor connected in series between said first and second microbolometer detectors and a second digital-to-analog converter connected to a gate of said second transistor.

4. The microbolometer detector circuit of claim 1 wherein said second voltage source comprises a digital-to-analog converter.

5. The microbolometer detector circuit of claim 4 wherein said digital-to-analog converter is for providing a bias for correcting for variations in the properties of said first microbolometer detector.

6. The microbolometer detector circuit of claim 5 wherein said variable voltage source comprises a second digital-to-analog converter connected to a negative terminal of said second microbolometer detector.

7. The microbolometer detector circuit of claim 5 wherein said variable voltage source comprises a second transistor connected in series between said first and second microbolometer detectors and a second digital-to-analog converter connected to a gate of said second transistor.

8. A microbolometer detector circuit comprising:

a substrate;

a first microbolometer detector attached to but substantially thermally isolated from said substrate;

a digital-to-analog converter coupled to said first microbolometer detector for providing a bias for correcting for variations in the properties of said first microbolometer detector; and

a second microbolometer thermally-shorted to said substrate, said first and second microbolometer detectors being connected in series in a conduction path extending from an output of said digital-to-analog converter; and

a variable voltage source coupled to said second microbolometer detector for providing a variable voltage across said second microbolometer detector.

9. The microbolometer detector circuit of claim 8 wherein said variable voltage source comprises a second digital-to-analog converter connected to a negative terminal of said second microbolometer detector.

10. The microbolometer detector circuit of claim 8 wherein said variable voltage source comprises a second transistor connected in series between said first and second microbolometer detectors and a second digital-to-analog converter is connected to a gate of said second transistor.

11. A method of detecting a level of incident radiation comprising:

providing a first microbolometer detector, said first microbolometer detector being attached to but substantially thermally isolated from a substrate;

providing a second microbolometer detector, said second microbolometer detector being thermally connected to said substrate;

connecting said first and second microbolometers in a series conduction path;

applying a first variable voltage to said first microbolometer detector;

applying a second variable voltage to said second microbolometer detector; and

detecting a resistance of said first microbolometer detector, said resistance being representative of the level of said radiation.

12. The method of claim 11 wherein the step of detecting the resistance of said first microbolometer detector is performed during a sampling period, the steps of applying said first and second variable voltages being performed during said sampling period.

13. The method of claim 11 wherein the step of detecting the resistance of said first microbolometer detector is performed during a sampling period, the step of applying said first variable voltage being performed before the beginning of said sampling period, the step of applying said second variable voltage being performed during said sampling period.

14. The method of claim 11 further comprising the step of performing a first calibration process to determine the level of said first variable voltage, said first calibration process comprising the steps of:

detecting an output of said first microbolometer detector at a first substrate temperature and at a first level of incident radiation;

detecting an output of said first microbolometer detector at said first substrate temperature and at a second level of incident radiation;

detecting an output of said first microbolometer detector at a second substrate temperature and at said first level of incident radiation;

detecting an output of said first microbolometer detector at said second substrate temperature and at said second level of incident radiation.

15. The method of claim 14 further comprising the step of performing a second calibration process to determine the level of said second variable voltage, said second calibration process comprising the steps of:

setting said first variable voltage at a level determined by said first calibration process;

detecting an output of said first microbolometer detector at a first level of said second variable voltage; and

detecting an output of said first microbolometer detector at a second level of said second variable voltage.

16. The method of claim 15 wherein said microbolometer detector is included in an array of microbolometer detectors and said first calibration process comprises applying a linear incremental technique to outputs of microbolometer detectors in said array.

17. The method of claim 15 wherein said microbolometer detector is included in an array of microbolometer detectors and said calibration process includes applying a recursive technique to outputs of microbolometer detectors in said array.