Semiconductor device evaluation system using optical fiber

• US 6,028,435 A
• Filed: 03/21/1997
• Issued: 02/22/2000
• Est. Priority Date: 03/22/1996
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Nikawa, Kiyoshi
• Primary Examiner(s): Ballato, Josie
• Assistant Examiner(s): Solis, Jose M.
• Application Number:
  US08/821,518
• Time in Patent Office: 1,068 Days
• Field of Search: 324/752, 324/751, 324/753, 324/501, 324/719, 324/703, 324/73.1, 324/760
• US Class Current: 324/754.23
• CPC Class Codes: G01R 31/2656 using non-ionising electromagnetic radiation, e.g. optical radiation
• CPC Class Codes: G01R 31/311 of integrated circuits G01R31/31728 takes precedence

Abstract

In a system for evaluating a semiconductor device, a laser beam generating unit generates a laser beam, and an optical fiber receives the laser beam to heat an area of the semiconductor device. A current deviation detector or a voltage deviation detector is connected to a terminal of the semiconductor device. As a result, the current deviation detector or the voltage deviation detector detects a current deviation or a voltage deviation at the terminal of the semiconductor device.

Claims

1. A system for evaluating a semiconductor device, comprising:

a laser beam generating unit for generating a laser beam;

an optical fiber, coupled to said laser beam generating unit, for receiving said laser beam to heat an area of said semiconductor device; and

a current deviation detector, connected to a first terminal of said semiconductor device, for detecting a current deviation at said first terminal caused by heating the area of said semiconductor device.

2. The system as set forth in claim 1, wherein said optical fiber is spire-shaped.

3. The system as set forth in claim 2, wherein a tip portion of said optical fiber is in contact with the area of said semiconductor device, so that heat within the tip portion of said optical fiber is transferred by conduction of heat to the area of said semiconductor device.

4. The system as set forth in claim 3, wherein said optical fiber except for the tip portion thereof is coated by metal.

5. The system as set forth in claim 3, wherein said optical fiber including the tip portion thereof is coated by metal.

6. The system as set forth in claim 2, wherein a tip portion of said optical fiber is not in contact with the area of said semiconductor device, so that heat within the tip portion of said optical fiber is transferred by thermal radiation to the area of said semiconductor device.

7. The system as set forth in claim 6, wherein said optical fiber except for the tip portion thereof is coated by metal.

8. The system as set forth in claim 6, wherein said optical fiber including the tip portion thereof is coated by metal.

9. The system as set forth in claim 2, wherein said optical fiber except for a tip portion thereof is coated by metal,

a size of said tip portion being less than a wavelength of said laser beam,

the tip portion of said optical fiber being in close proximity to the area of said semiconductor device, so that near-field light leaks from the tip portion of said semiconductor to the area of said semiconductor device.

10. The system as set forth in claim 2, wherein said optical beam is a near infrared radiation,

said optical fiber except for a tip portion thereof being coated by metal,

a size of said tip portion larger than a wavelength of said laser beam,

the tip portion of said optical fiber being not in contact with the area of said semiconductor device, so that far-field light leaks from the tip portion of said semiconductor to the area of said semiconductor device.

11. The system as set forth in claim 1, further comprising a constant voltage source connected to a second terminal of said semiconductor device.

12. The system as set forth in claim 1, wherein said first terminal is a ground terminal,

a power supply terminal of said semiconductor device being grounded.

13. The system as set forth in claim 1, wherein said first terminal is a ground terminal,

a power supply terminal of said semiconductor device being opened.

14. The system as set forth in claim 1, further comprising:

a control unit for scanning said laser beam with respect to said semiconductor device; and

a display unit for displaying said current deviation.

15. A system for evaluating a semiconductor device, comprising:

a laser beam generating unit for generating a laser beam;

an optical fiber, coupled to said laser beam generating unit, for receiving said laser beam to heat an area of said semiconductor device; and

a voltage deviation detector, connected to a first terminal of said semiconductor device, for detecting a voltage deviation at said first terminal caused by heating the area of said semiconductor device.

16. The system as set forth in claim 15, wherein said optical fiber is spire-shaped.

17. The system as set forth in claim 16, wherein a tip portion of said optical fiber is in contact with the area of said semiconductor device, so that heat within the tip portion of said optical fiber is transferred by conduction of heat to the area of said semiconductor device.

18. The system as set forth in claim 17, wherein said optical fiber except for the tip portion thereof is coated by metal.

19. The system as set forth in claim 17, wherein said optical fiber including the tip portion thereof is coated by metal.

20. The system as set forth in claim 16, wherein a tip portion of said optical fiber is not in contact with the area of said semiconductor device, so that heat within the tip portion of said optical fiber is transferred by thermal radiation to the area of said semiconductor device.

21. The system as set forth in claim 20, wherein said optical fiber except for the tip portion thereof is coated by metal.

22. The system as set forth in claim 20, wherein said optical fiber including the tip portion thereof is coated by metal.

23. The system as set forth in claim 16, wherein said optical fiber except for a tip portion thereof is coated by metal.

a size of said tip portion being less than a wavelength of said laser beam,

the tip portion of said optical fiber being in close proximity to the area of said semiconductor device, so that near-field light leaks from the tip portion of said semiconductor to the area of said semiconductor device.

24. The system as set forth in claim 16, wherein said optical beam is a near infrared radiation, a size of said tip portion being less than a wavelength of said laser beam,

said optical fiber except for a tip portion thereof being coated by metal,

a size of said tip portion being less than a wavelength of said laser beam,

the tip portion of said optical fiber being not in contact with the area of said semiconductor device, so that far-field light leaks from the tip portion of said semiconductor to the area of said semiconductor device.

25. The system as set forth in claim 15, further comprising a constant current source connected to said first terminal of said semiconductor device,

a second terminal of said semiconductor device being grounded.

26. The system as set forth in claim 15, wherein said first terminal is a power supply terminal,

a ground terminal of said semiconductor device being grounded.

27. The system as set forth in claim 15, wherein said first terminal is a power supply terminal,

a ground terminal of said semiconductor device being opened.

28. The system as set forth in claim 15, further comprising:

a control unit for scanning said laser beam with respect to said semiconductor device; and

a display unit for displaying said current deviation.

29. A method for evaluating a semiconductor device, comprising the steps of:

moving a tip portion of a spire-shaped optical fiber to an area of said semiconductor device;

emitting a laser beam into said optical fiber to heat the area of said semiconductor device; and

detecting a current deviation at a first terminal of said semiconductor device caused by heating the area of said semiconductor device.

30. The method as set forth in claim 29, wherein said optical fiber moving step comprises a step of causing the tip portion of said optical fiber to be in contact with the area of said semiconductor device, so that heat within the tip portion of said optical fiber is transferred by conduction of heat to the area of said semiconductor device.

31. The method as set forth in claim 29, wherein said optical fiber moving step comprises a step of causing the tip portion of said optical fiber to be not in contact with the area of said semiconductor device, so that heat within the tip portion of said optical fiber is transferred by thermal radiation to the area of said semiconductor device.

32. The system as set forth in claim 29, wherein said optical fiber moving step comprises a step of causing the tip portion of said optical fiber to be in close proximity to the area of said semiconductor device, so that light leaks from the tip portion of said semiconductor to the area of said semiconductor device.

33. The system as set forth in claim 29, wherein said optical beam is a near infrared radiation,

said optical fiber moving step comprising causing the tip portion of said optical fiber to be not in contact with the area of said semiconductor device, so that light leaks from the tip portion of said semiconductor to the area of said semiconductor device.

34. The method as set forth in claim 29, further comprising a step of applying a constant voltage to a second terminal of said semiconductor device.

35. The method as set forth in claim 29, further comprising a step of causing a second terminal of said semiconductor device to be grounded.

36. The method as set forth in claim 29, further comprising a step of causing a second terminal of said semiconductor device to be opened.

37. The method as set forth in claim 29, further comprising a step of supplying test pattern signals to terminals of said semiconductor device.

38. The method as set forth in claim 29, further comprising the steps of:

scanning the tip portion of said optical fiber with respect to said semiconductor device; and

displaying an image of said current deviation during said scanning step and/or after said scanning step completes its operation.

39. The method as set forth in claim 29, further comprising the steps of:

stationing the tip portion of said optical fiber with respect to said semiconductor device for a predetermined duration; and

displaying said current deviation as a current-to-time diagram during said scanning step and/or after said stationing step completes its operation.

40. A method for evaluating a semiconductor device, comprising the steps of:

moving a tip portion of a spire-shaped optical fiber to an area of said semiconductor device;

emitting a laser beam into said optical fiber to heat the area of said semiconductor device; and

detecting a voltage deviation at a first terminal of said semiconductor device caused by heating the area of said semiconductor device.

41. The method as set forth in claim 40, wherein said optical fiber moving step comprises a step of causing the tip portion of said optical fiber to be in contact with the area of said semiconductor device, so that heat within the tip portion of said optical fiber is transferred by conduction of heat to the area of said semiconductor device.

42. The method as set forth in claim 40, wherein said optical fiber moving step comprises a step of causing the tip portion of said optical fiber to be not in contact with the area of said semiconductor device, so that heat within the tip portion of said optical fiber is transferred by thermal radiation to the area of said semiconductor device.

43. The method a set forth in claim 40, wherein said optical fiber moving step comprises a step of causing the tip portion of said optical fiber to be in close proximity to the area of said semiconductor device, so that light leaks from the tip portion of said semiconductor to the area of said semiconductor device.

44. The method as set forth in claim 40, wherein said optical beam is a near infrared radiation,

said optical fiber moving step comprising causing the tip portion of said optical fiber to be not in contact with the area of said semiconductor device, so that light leaks from the tip portion of said semiconductor to the area of said semiconductor device.

45. The method as set forth in claim 40, further comprising the steps of:

supplying a constant current to the first terminal of said semiconductor device; and

causing a second terminal of said semiconductor device to be grounded.

46. The method as set forth in claim 40, further comprising a step of causing a second terminal of said semiconductor device to be grounded.

47. The method as set forth in claim 40, further comprising a step of causing a second terminal of said semiconductor device to be opened.

48. The method as set forth in claim 40, further comprising a step of supplying test pattern signals to terminals of said semiconductor device.

49. The method as set forth in claim 40, further comprising the steps of:

scanning the tip portion of said optical fiber with respect to said semiconductor device; and

displaying an image of said voltage deviation during said scanning step and/or after said scanning step completes its operation.

50. The method as set forth in claim 40, further comprising the steps of:

stationing the tip portion of said optical fiber with respect to said semiconductor device for a predetermined duration; and

displaying said voltage deviation as a current-to-time diagram during said scanning step and/or after said stationing step completes its operation.

51. A system for evaluating a semiconductor device, comprising:

a laser beam generating unit for generating a laser beam;

an optical fiber having an aperture at a tip end, coupled to said laser beam generating unit, for receiving said laser beam to heat an area of said semiconductor device under said aperture; and

an electrical deviation detector, connected a first terminal of said semiconductor device, for detecting an electrical deviation at said first terminal caused by heating the area of said semiconductor device.