Method for forming coaxial silicon interconnects

• US 6,028,436 A
• Filed: 12/02/1997
• Issued: 02/22/2000
• Est. Priority Date: 12/02/1997
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Hembree, David R., Wood, Alan G., Akram, Salman
• Primary Examiner(s): Ballato, Josie
• Assistant Examiner(s): SUNDARAM, T R
• Application Number:
  US08/982,328
• Time in Patent Office: 812 Days
• Field of Search: 324/755, 324/754, 324/757, 324/758, 324/760, 324/765, 324/158.1
• US Class Current: 324/754.03
• CPC Class Codes: G01R 1/0408 Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets G01R1/067 takes precedence; mass production testing systems G01R31/59; testing of connections G01R31/66; for testing printed circuit boards G01R31/2808
• CPC Class Codes: G01R 31/2886 Features relating to contacting the IC under test, e.g. probe heads; chucks G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06

Abstract

An interconnect apparatus for testing bare semiconductor dice comprises raised contact members on a semiconductive substrate. The contact members are covered with an insulation layer and a conductive cap connected by a conductive trace to a testing circuit. The trace is covered with coaxial layers of a silicon containing insulation and a metal for shielding the trace from "cross-talk" and other interference. An apparatus for simultaneous testing of multiple dies on a wafer has thermal expansion characteristics matching those of the semiconductor die or wafer and provides clean signals.

Claims

1. An apparatus for testing a circuit of a semiconductor device, comprising:

a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having at least one bond pad thereon;

at least one raised contact member positioned on said substrate surface for contact with said at least one bond pad of said semiconductor device;

at least one conductive trace connected to said at least one raised contact member;

a second insulative layer overlying said at least one trace; and

a conductive layer overlying said second insulative layer and said at least one conductive trace to provide shielding to said at least one conductive trace.

2. The apparatus of claim 1, wherein said second insulative layer and said conductive layer comprise substantially continuous layers overlying said at least one trace, substrate between said at least one trace, and non-contact portions of said at least one raised contact member.

3. The apparatus of claim 1, wherein said conductive layer comprises one of aluminum, titanium, tungsten, cobalt, nickel, molybdenum, and copper.

4. The apparatus of claim 1, wherein said second insulative layer comprises silicon dioxide.

5. The apparatus of claim 1, wherein said second insulative layer comprises silicon nitride.

6. The apparatus of claim 1, wherein said substrate comprises a semiconductor.

7. The apparatus of claim 1, wherein said substrate comprises silicon dioxide.

8. The apparatus of claim 1, wherein said at least one raised contact member includes a projecting apex and a stop plane adjacent to said projecting apex.

9. An apparatus for testing a circuit of a semiconductor device, comprising:

a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having a plurality of bond pads thereon;

a plurality of raised contact members positioned on said substrate surface for contact with at least one bond pad of said plurality of bond pads of said semiconductor device;

a plurality of conductive traces, at least one of said plurality of conductive traces connected to at least one raised contact member of said plurality of raised contact members;

a second insulative layer substantially overlying each trace of said plurality of traces; and

a conductive layer overlying said second insulative layer and each said conductive trace of said plurality of traces to provide shielding to each said trace.

10. The apparatus of claim 9, wherein said second insulative layer and said conductive layer comprise continuous layers overlying said plurality of traces, substrate between said plurality of traces and non-contact portions of said plurality of raised contact members.

11. The apparatus of claim 9, wherein said conductive layer comprises one of aluminum, titanium, tungsten, cobalt, nickel, molybdenum, and copper.

12. The apparatus of claim 9, wherein said second insulation layer comprises silicon dioxide.

13. The apparatus of claim 9, wherein said second insulative layer comprises silicon nitride.

14. The apparatus of claim 9, wherein said substrate comprises a semiconductor.

15. The apparatus of claim 9, wherein said substrate comprises silicon dioxide.

16. The apparatus of claim 9, wherein at least one of said plurality of raised contact members includes a projecting apex and a stop plane adjacent to said projecting apex.

17. An apparatus for testing a circuit of a semiconductor device, comprising:

a substrate having an insulative surface thereon, said substrate configured to overlie a surface of a semiconductor device having a plurality of bond pads thereon;

a plurality of raised contact members positioned on said substrate surface for contact with said plurality of bond pads;

a plurality of conductive traces, at least one conductive trace of said plurality of traces connected to at least one contact member of said plurality of raised contact members;

a second insulative layer overlying each trace of said plurality of traces; and

a conductive layer overlying said second insulative layer.

18. The apparatus of claim 17, wherein said second insulative layer and said conductive layer comprise substantially continuous layers overlying said plurality of traces, substrate between said plurality of traces and non-contact portions of said plurality of raised contact members.

19. The apparatus of claim 17, wherein said conductive layer comprises one of aluminum, titanium, tungsten, cobalt, nickel, molybdenum, and copper.

20. The apparatus of claim 17, wherein said second insulative layer comprises silicon dioxide.

21. The apparatus of claim 17, wherein said second insulative layer comprises silicon nitride.

22. The apparatus of claim 17, wherein said substrate comprises a semiconductor.

23. The apparatus of claim 17, wherein said substrate comprises silicon dioxide.

24. The apparatus of claim 17, wherein substantially each raised contact member of said plurality of raised contact members includes a projecting apex and a stop plane adjacent to said projecting apex.