Process and apparatus for the formation of patterns in a photoresist by continuous laser irradiation, application to the production of microtips emissive cathode electron sources and flat display screens

• US 6,030,266 A
• Filed: 07/23/1997
• Issued: 02/29/2000
• Est. Priority Date: 07/29/1996
• Status: Expired due to Fees

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Rabarot, Marc, Ida, Michel
• Primary Examiner(s): Patel, Nimeshkumar D.
• Assistant Examiner(s): Smith, Michael J.
• Application Number:
  US08/899,169
• Time in Patent Office: 951 Days
• Field of Search: 495/24, 495/50, 430/396, 205/667
• US Class Current: 445/24
• CPC Class Codes: G03F 7/2022 Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
• CPC Class Codes: G03F 7/70075 Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
• CPC Class Codes: G03F 7/70383 Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams maskless lithography using a programmable mask G03F7/70291
• CPC Class Codes: H01J 2329/00 Electron emission display panels, e.g. field emission display panels
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

Process and apparatus for the formation of patterns in a photosensitive resin layer or photoresist by continuous laser irradiation, application to the production of microtip emissive cathode electron sources and flat display screens. Formation takes place of non-mutually interfering elementary light beams (41), there is at least one relative translation at constant light power and speed of said beams with respect to the layer in order to irradiate lines thereof, each line receiving a light dose lower than that necessary for the development of the resin, a relative rotation of all the beams with respect to the layer takes place, the translation is recommenced in order to irradiate other lines, each line receiving a light dose complimentary to the preceding dose and the resin is developed.

Claims

1. A process for the formation of patterns in a photoresist layer comprising:

forming a plurality of non-mutually interfering elementary light beams at a surface of the photoresist layer;

performing at least one first relative translation at a constant speed and constant light power of said elementary beams with respect to the photoresist layer, the elementary beams being focused on the photoresist, so as to irradiate first parallel lines of said photoresist layer, said speed and said power being chosen in such a way that each first irradiated parallel line receives a first light dose lower than the light dose necessary for the development of said photoresist layer;

performing a relative rotation by a given angle of all the elementary light beams with respect to the photoresist layer;

performing at least one second relative translation, at constant speed and constant light power, of said elementary beams with respect to the photoresist layer, the elementary beams being focused on the photoresist layer, so as to irradiate second parallel lines of said photoresist layer which intersect said first parallel lines, said speed and said light power being chosen in such a way that each irradiated second parallel line receives a second light dose equal to the difference between the light dose necessary for the development and the first light dose, so that only the intersections of the first and second lines receive the dose necessary for the development; and

developing the photoresist such that patterns are formed at said intersections.

2. The process according to claim 1, further comprising:

performing the first and second relative translations at the same speed and same light power, said speed and said light power being chosen in such a way that the first and second light doses are both equal to half the dose necessary for the development.

3. The process according to claim 1, further comprising:

performing the relative rotation at an angle of 90°

.

4. The process according to claim 1, further comprising:

performing first and second relative translations by keeping the photo-resist layer in a fixed position while the elementary light beams are displaced with respect to said photoresist layer.

5. The process according to claim 1, further comprising:

performing first and second relative translations by keeping the elementary light beams in a fixed position while the photoresist layer is displaced relative to the elementary light beams.

6. The process according to claim 1, further comprising:

performing first and second relative translations by displacing the elementary light beams and the photoresist layer in opposite directions.

7. The process according to claim 1, further comprising:

performing at least one series of several successive first relative translations and also at least one series of several successive second relative translations; and

performing, between any two successive first relative translations and between any two successive second relative translations, a first relative movement of all the elementary light beams with respect to the photoresist layer, said first relative movement being perpendicular to the irradiated lines of the previous successive relative translation and with a spacing (LT) such that the distance (LM) between two adjacent light beams is a multiple of this spacing.

8. The process according to claim 7, further comprising:

performing a plurality of series of relative first and relative second translations; and

performing, between any two successive series, a second relative movement of all the elementary light beams with respect to the photoresist layer, said second relative movement being perpendicular to the irradiated lines of the previous series of relative translations and with a spacing equal to the sum of the distance (LR) between the axes of the elementary light beams furthest from one another and the distance (LT) between the two corresponding, adjacent lines.

9. The process according to claim 1, further comprising:

forming the patterns in the photoresist layer using positive photoresist, so that the patterns formed are holes.

10. The process according to claim 1, further comprising:

forming the patterns in the photoresist layer using negative photoresist, so that the patterns formed are studs.

11. An apparatus for the formation of patterns in a photoresist layer comprising:

a light source able to transmit a light beam having a constant power;

means for the formation of a plurality of non-mutually interfering, elementary light beams at a surface of the photoresist layer from the constant power light beam; and

means for the relative translation and rotation of the means for the formation of a plurality of said non mutually interfering elementary light beams with respect to the photoresist layer.

12. The apparatus according to claim 11, characterized in that the means for formation of said plurality of elementary light beams comprises:

an array of optical fibers having first ends, whose axes are parallel to one another, and second ends which are optically coupled to the light source, so as to form elementary light beams respectively in the optical fibers; and

an array of optical focusing means optically coupled respectively to the first ends of the optical fibers and able to focus the elementary light beams onto the photoresist layer.

13. A process for the production of a microtip emissive cathode electron source, comprising:

forming a structure having a plurality of parallel cathode conductors on a substrate, an electrically insulating layer covering said cathode conductors; and

a plurality of parallel grids over said insulating layer and positioned at an angle with said cathode conductors;

forming holes through the grids and insulating layer in areas where the grids cross the cathode conductors, said process of forming holes comprising,

depositing a layer of positive photoresist at least in said areas where the grid crosses the cathode conductor,

forming a plurality of non-mutually interfering elementary light beams at a surface of the photoresist layer,

performing at least one first relative translation at a constant speed and constant light power of said elementary beams with respect to the photoresist layer, the elementary beams being focused on the photoresist, so as to irradiate first parallel lines of said photoresist layer, said speed and said power being chosen in such a way that each first irradiated parallel line receives a first light dose lower than the light dose necessary for the development of said photoresist layer,

performing a relative rotation by a given angle of all the elementary light beams with respect to the photoresist layer,

performing at least one second relative translation, at constant speed and constant light power, of said elementary beams with respect to the photoresist layer, the elementary beams being focused on the photoresist layer, so as to irradiate second parallel lines of said photoresist layer which intersect said first parallel lines, said speed and said light power being chosen in such a way that each irradiated second parallel line receives a second light dose equal to the difference between the light dose necessary for the development and the first light dose, so that only the intersections of the first and second lines receive the dose necessary for the development,

developing the photoresist such that patterns are formed at said intersections,

etching the grids and insulating layer through said holes formed in the photoresist; and

forming electron emitting material microtips in said holes on the cathode conductors.

14. The process according to claim 13, wherein said process is used to form an electron source for a flat screen display.