Apparatus for controlling etch rate when using consumable electrodes during plasma etching

• US 6,030,489 A
• Filed: 07/01/1999
• Issued: 02/29/2000
• Est. Priority Date: 01/22/1997
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Hwang, Yuan-Ko
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US09/345,355
• Time in Patent Office: 243 Days
• Field of Search: 156/345, 118/723 R, 118/723 E, 118/712, 118/713, 118/714, 118/715, 204/298.03, 204/298.32
• US Class Current: 156/345.26
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A method and apparatus to improve process control during plasma etching of semiconductor substrates. Improvements are directed towards controlling the rate of etching when using consumable electrodes. Consumable electrode materials are used to increase selectivity in certain plasma etching processes as in via. contact. or in SOG etch. A consumable electrode material has a significant effect on processing time due to changing gap dimension between electrodes. This invention teaches how to adjust for process variables by using feedback from two strategically placed pressure manometers.

Claims

1. A plasma assisted chemical etching apparatus for doing etching operations on the surface of semiconductor wafers, comprising:

a) a vacuum chamber;

b) a means for generating a plasma field between a moveable upper consumable electrode and a stationary lower non-consumable electrode within said vacuum chamber;

c) an interlock means for passing a wafer into said vacuum chamber;

d) a wafer support means contiguous to an upper surface of the lower non-consumable electrode;

e) a first port means connected to a throttle valve and to an external pumping source;

f) a second port for communicating with trifurcated ports disposed circularly and spaced equally on the underside of an annular upper electrode clamp;

g) a third port means for admission of a process gas from an external source;

h) a first manometer means connected externally to the first port to sense the vacuum chamber pressure adjacent said lower non-consumable electrode;

i) a first pressure controller implementing a pressure feedback communicated by said first manometer means;

j) a throttle valve which is actuated by said first pressure controller to equalize the vacuum chamber pressure to a preset process parameter; and

,

k) a second pressure manometer mounted to said second port to communicate pressure from said trifurcated ports to a gap controller that repeatedly computes new gap counts based on pressure feedback from said second manometer.

2. The plasma assisted chemical etching apparatus according to claim 1 wherein said feedback from said first and second pressure manometers is applied to hold constant a gap pressure between the upper consumable and lower non-consumable electrodes using the pressure controller and the gap controller.

3. The plasma assisted chemical etching apparatus according to claim 1 wherein feedback from said first pressure manometer controls the vacuum chamber pressure to within a predetermined process parameter.

4. The plasma assisted chemical etching apparatus according to claim 1 wherein feedback from said second pressure manometer is repeatedly converted to gap adjustment counts by a gap controller and used to automatically drive the upper consumed electrode to a new position by a gap driver and to make the new position conform to a predetermined ideal gap dimension.

5. The plasma assisted chemical etching apparatus according to claim 1 wherein an on-line option to automatically adjust said gap dimension to assure the upper consumed electrode'"'"'s gap pressure equals set point for each wafer before plasma etching begins.

6. The plasma assisted chemical etching apparatus according to claim 1 wherein an off-line option to automatically adjust said gap dimension assuring upper consumed electrode'"'"'s gap pressure equals set point after a preset number of wafers are etched.