Sputter etching chamber having a gas baffle with improved uniformity

• US 6,030,508 A
• Filed: 05/20/1998
• Issued: 02/29/2000
• Est. Priority Date: 11/02/1995
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yang, Chin-Shien, Chen, Chuan-Huai, Lin, Cheng-Kun
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): Mercado, Julian A.
• Application Number:
  US09/083,252
• Time in Patent Office: 650 Days
• Field of Search: 204/298.07, 204/298.11, 204/298.33, 204/298.31, 204/192.1, 204/192.32, 29/592
• US Class Current: 204/192.1
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: Y10T 29/49 Method of mechanical manufacture

Abstract

The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

Claims

1. A method for attaching a gas baffle that comprises a disk having smooth unbroken, upper and lower surfaces, to the inside of a sputtering shield comprising:

providing a first disk-shaped plate that has smooth unbroken surfaces;

drilling first holes through said first plate and countersinking said first holes on one side;

drilling a second hole, centrally located, through said first plate and then threading said second hole;

providing flat-head screws, passing said screws through said first holes and then screwing said screws into said sputtering shield to a depth sufficient to firmly attach said gas baffle to the inside of said sputtering shield while at the same time positioning the gas baffle to be a fixed distance from the sputtering shield;

providing a second disk-shaped plate that has upper and lower smooth unbroken surfaces;

attaching a threaded rod, formed on said second disk-shaped plate, normal to the center of the upper surface of said second plate; and

screwing said threaded rod into said second hole.

2. The method of claim 1 wherein said fixed distance is between about 4 and about 7 mm.

3. The method of claim 1 wherein an inlet for the admission of gas is located above the center of said first plate.

4. The method of claim 1 wherein said second plate comprises aluminum metal.