Process for preparing a film of an oxide or a hydroxide of an element of groups IIB or IIIA of the periodic table, and the composite structures which include such a film

• US 6,030,517 A
• Filed: 10/07/1997
• Issued: 02/29/2000
• Est. Priority Date: 04/06/1995
• Status: Expired due to Term

• Current Assignee: Centre National De La Recherche Scientifique
• Original Assignee: Centre National De La Recherche Scientifique
• Inventors: Lincot, Daniel, Peulon, Sophie
• Primary Examiner(s): Gorgos, Kathryn
• Assistant Examiner(s): Nicolas, Wesley A.
• Application Number:
  US08/930,624
• Time in Patent Office: 875 Days
• Field of Search: 205/333, 205/50, 205/316, 205/124, 205/155, 205/157, 205/320, 428/629, 438/95, 427/204, 427/205
• US Class Current: 205/333
• CPC Class Codes: C25D 9/04 with inorganic materials

Abstract

Process for depositing a film of a metal oxide or of a metal hydroxide on a substrate in an electrochemical cell, wherein (i) the metal hydroxide is of formula M(OH)_x A_y, M representing at least one metallic species in an oxidation state i chosen from the elements in Groups II and III of the Periodic Table, A being an anion whose number of charges is n, 0<x≦i and x+ny=i,

(ii) the electrochemical cell comprises (a) an electrode comprising the substrate, (b) a counterelectrode, (c) a reference electrode and (d) an electrolyte comprising a conducting solution comprising at least one salt of the metal M, the process comprising the steps of:

dissolving oxygen in the electrolyte and

imposing a cathode potential of less than the oxygen reduction potential and greater than the potential for deposition of the metal M in the electrolyte in question on the electrochemical cell.

Claims

1. Process for depositing a film of a metal oxide or of a metal hydroxide on a substrate in an electrochemical cell, wherein

(i) said metal oxide comprises a cation M and said metal hydroxide is of formula M(OH)_x A_y, M representing at least one metallic species in an oxidation state i selected from the group consisting of the elements in Groups IIB and IIIA of the Periodic Table, A being an anion whose number of charges is n, said formula satisfies

View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)

2. Process according to claim 1, wherein M is Zn, Cd, Ga or In.

3. Process according to claim 1, wherein said electrolyte comprises a polar solvent.

4. Process according to claim 3, wherein said polar solvent is water.

5. Process according to claim 1, wherein the salt of the metal M is a halide, a sulfate, a nitrate, a perchlorate, or an acetate.

6. Process according to claim 1, wherein the oxygen dissolved in the electrolyte is supplied by a mixture of inert gas and oxygen.

7. Process according to claim 1, wherein the counterelectrode is an electrode comprising the metal M.

8. Process according to claim 1, wherein the electrolyte comprises at least one dissociable supporting salt chosen from organic and inorganic salts comprising an anion which will not cause precipitation of an insoluble compound with the metal cation M.

9. Process according to claim 8, wherein the supporting salt is a halide, sulfate, nitrate, perchlorate, acetate, lactate, formate, oxalate, or citrate.

10. Process according to claim 8, wherein said organic or inorganic salt is a sodium, potassium or ammonium salt.

11. Process according to claim 1, for the preparation of an oxide film, wherein said electrolyte comprises an aqueous medium comprising KCl and wherein said metal M is Zn(II), in which the Zn(III) is present at a concentration of less than 10^-2 mol/l, the medium has a temperature of at least 50°

C. and the oxygen is present at a concentration less than saturation concentration in the solution.

12. Process according to claim 11, wherein the Zn(II) concentration is less than 5×

10^-3 mol/l.

13. Process according to claim 1, for the preparation of a Zn(OH)_x A_y film, wherein said electrolyte comprises an aqueous medium comprising KCl and has a concentration of Zn(II) greater than 2×

10^-2 mol/l, a temperature less than 50°

C. and an oxygen concentration less than or equal to saturation concentration.

14. Process according to claim 1, wherein the electrolyte comprises at least one precursor salt of different metallic species M.

15. Process according to claim 1, wherein the electrode comprises a metallic material, a conductive metal oxide, or a semiconductor material.

16. Process according to claim 15, wherein the metallic material or the semiconductor material is a thin film deposited on an insulating substrate.

17. Process according to claim 16, wherein the insulating substrate is transparent.

18. Process according to claim 15, wherein said metallic material is iron, steel, copper or gold.

19. Process according to claim 15, wherein said conductive metal oxide is tin oxide SnO₂, indium oxide In₂ O₃, mixed indium tin oxide (ITO) or titanium oxide TiO₂.

20. Process according to claim 15, wherein said semiconductor material is silicon, GaAs, InP, Cu(In,Ga) (S,Se)₂ or CdTe.

21. Process according to claim 1, wherein the electrolyte comprises at least two metal salts, M representing more than one metallic species.

22. Process according to claim 1, wherein said electrolyte further comprises in addition to or in place of the second salt, a compound which complexes with the cation M.

23. Process according to claim 22, wherein said compound is a gallium compound or an indium compound and the complexing agent is an oxalate, citrate, fluoride, chloride, bromide, or iodide.

24. Multilayer structure comprising

a substrate layer supporting a film of

a metal hydroxide of formula M(OH)_x A_y, M representing at least one metallic species in an oxidation state i selected from the group consisting of the elements in Groups IIB and IIIA of the Periodic Table, A being an anion whose number of charges is n, said formula satisfies 0<

x≦

i and x+ny=i, the substrate layer being a layer of a conductive material selected from the group consisting of iron, steel, copper, gold, a coductive metal oxide and a semiconductor material.

25. Multilayer structure according to claim 24, wherein the layer of conductive material or of semiconductor material is supported by an insulating plate.

26. Multilayer structure according to claim 24, wherein the conductive metal oxide is tin oxide SnO₂, indium oxide In₂ O₃, mixed indium tin oxide (ITO) or titanium oxide TiO₂.

27. Multilayer structure according to claim 24, wherein the semiconductor material is silicon, GaAs, InP, Cu(In, Ga) (S,Se)₂ or CdTe.

28. Electrode for a photocell, comprising a multilayer structure according to claim 24.