Process for defining a pattern using an anti-reflective coating and structure therefor

• US 6,030,541 A
• Filed: 06/19/1998
• Issued: 02/29/2000
• Est. Priority Date: 06/19/1998
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Ng, Hung, Caterer, Michael, Marsh, James T., Oberschmidt, James M., Rankin, Jed H., Adkisson, James W.
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): Powell, Alva C
• Application Number:
  US09/100,542
• Time in Patent Office: 620 Days
• Field of Search: 216/41, 216/49, 216/50, 216/51, 438/717
• US Class Current: 216/51
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/28123 Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
• CPC Class Codes: H01L 21/32139 using masks

Abstract

A pattern in a surface is defined by providing on the surface a hard mask material; depositing an anti-reflective coating on the hard mask material; applying a photoresist layer on the anti-reflective coating; patterning the photoresist layer, anti-reflective layer and hard mask material; and removing the remaining portions of the photoresist layer and anti-reflective layer; and then patterning the substrate using the hard mask as the mask. Also provided is a structure for defining a pattern in a surface which comprises a surface having a hard mask material thereon; an anti-reflective coating located on the hard mask material; and a photoresist located on the anti-reflective coating. Also provided is an etchant composition for removing the hard mask material which comprises an aqueous composition of HF and chlorine.

Claims

1. A process for defining a pattern in a surface which comprises:

providing on said surface a layer of hard mask material;

depositing an inorganic anti-reflective coating on said layer of hard mask material;

applying a photoresist layer above said anti-reflective coating;

patterning said photoresist layer;

patterning said antireflective coating;

patterning said layer of hard mask material;

removing the remaining portions of said photoresist layer;

removing the remaining portions of said anti-reflective layer by etching the remaining portions thereof; and

then patterning said surface using the hard mask as a mask.

2. The process of claim 1 wherein said layer of hard mask material is provided by reacting tetraethylorthosilicate with oxygen or ozone to provide silicon dioxide.

3. The process of claim 1 wherein said layer of hard mask material is about 400 to about 1000 Å

thick.

4. The process of claim 1 wherein said anti-reflective coating is a conformal inorganic coating.

5. The process of claim 1 wherein said anti-reflective coating is a conformably deposited silicon oxynitride.

6. The process of claim 5 wherein said silicon oxynitride is deposited by chemical vapor deposition.

7. The method of claim 6 wherein the top surface of said silicon oxynitride is oxidized, or a further oxide layer is deposited.

8. The process of claim 6 wherein the top surface of said silicon oxynitride is oxidized by a N₂ O plasma treatment.

9. The process of claim 6 wherein said anti-reflective coating has a thickness of about 100 to about 2000 Å

.

10. The process of claim 1 wherein said photoresist layer is a chemically amplified photoresist.

11. The process of claim 10 wherein said photoresist layer is about 3000 to about 15000 Å

thick.

12. The process of claim 1 wherein said anti-reflective coating is patterned by reactive ion etching or wet etching employing H₂ PO₄ aqueous etchant composition or downstream plasma etching.

13. The process of claim 5 wherein said hard mask material is silicon oxide from reacting tetraethylorthosilicate with oxygen or ozone and wherein said hard mask material is etched and removed employing an aqueous composition containing HF.

14. The process of claim 1 wherein said hard mask comprises a layer of silicon oxide from tetraethylorthosilicate reacted with ozone or oxygen and an upper layer of amorphous silicon.

15. The process of claim 14 wherein said amorphous silicon is about 100 to about 500 Å

thick.

16. The process of claim 1 wherein said surface is polycrystalline silicon.

17. The process of claim 16 wherein a gate oxide is present beneath the polycrystalline silicon the locations where patterned followed by a semiconductor substrate.

18. The process of claim 1 wherein said semiconductor substrate includes non-planar topology.