Method for manufacturing a sensor

• US 6,030,850 A
• Filed: 02/25/1998
• Issued: 02/29/2000
• Est. Priority Date: 10/11/1995
• Status: Expired due to Term

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Funk, Karsten, Laermer, Franz, Kurle, Juergen, Schilp, Andrea, Offenberg, Michael
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): Blum, David S
• Application Number:
  US09/030,414
• Time in Patent Office: 734 Days
• Field of Search: 438/48, 257/417, 257/418, 257/415, 73/777, 361/280
• US Class Current: 438/48
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2203/033 Trenches
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 1/0019 Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182
• CPC Class Codes: B81C 2201/0136 by doping limited material regions
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type

Abstract

In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.

Claims

1. A method for manufacturing a sensor, comprising the steps of:

sequentially depositing on a substrate, a first insulating layer, a conducting layer directly in contact with said first insulating layer, a second insulating layer directly in contact with said conducting layer, and a silicon layer directly in contact with said second insulating layer;

patterning the conducting layer and the second insulating layer before deposition of a subsequent layer;

introducing trenches into the silicon layer, the trenches extending from a top side of the silicon layer to the second insulating layer; and

applying an etching medium through the trenches to the second insulating layer.

2. The method according to claim 1, wherein the substrate is a silicon substrate.

3. The method according to claim 1, wherein the first and second insulating layers include silicon oxide.

4. The method according to claim 1, wherein the silicon layer is deposited in an epitaxial reactor.