Method for overpressure protected pressure sensor

• US 6,030,851 A
• Filed: 06/04/1997
• Issued: 02/29/2000
• Est. Priority Date: 06/07/1995
• Status: Expired due to Fees

• Current Assignee: Clifford D. Fung, Paul E. Grandmont
• Original Assignee: Clifford D. Fung, Paul E. Grandmont
• Inventors: Grandmont, Paul E., Fung, Clifford D.
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US08/869,014
• Time in Patent Office: 1,000 Days
• Field of Search: 438/53, 438/52, 438/577, 438/614, 438/670, 438/671, 438/674, 438/678, 438/FOR 455, 430/312
• US Class Current: 438/53
• CPC Class Codes: G01L 19/0618 Overload protection
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively

Abstract

A structure and method of fabrication is provided for a micromechanical overrange protected pressure sensor. A pressure sensor having a silicon substrate is provided with a cavity and a deformable diaphragm wherein deflection of the diaphragm in response to pressure is limited by a forward pressure stop. A method is provided for electrodepositing a metal layer which is attached to the substrate adjacent to the diaphragm to provide a reverse pressure stop in response to pressure supplied to the underside of a diaphragm. The metal layer has a relatively low thermal coefficient of expansion and is patterned through use of a photo-resist layer. A previously deposited precision spacer between the diaphragm and reverse pressure stop is removed to provide a precision gap between the reverse pressure stop and the diaphragm.

Micromechanical elements of relatively great size, yet having precision dimensions or positioning are herein fabricated by lithography of patterned resist films up to several hundred microns thick, exposed and developed to great depth with faithful pattern delineation. The patterns formed by development of the exposed resist are then metallized, preferably by pulse electroplating, to form structural or mechanical elements. Deep film patterning may be achieved by laying down successive layers of a dry film resist and exposing each layer after it is deposited.

Claims

1. A method for fabricating a mechanical overpressure stop on a pressure sensor having a silicon substrate and a sensing diaphragm comprising the steps of

depositing a layer of sacrificial material to form a spacer on said silicon substrate adjacent to said sensing diaphragm,

depositing a metalization layer on said silicon substrate and said spacer,

depositing a layer of dry film resist upon said metalization layer, wherein said dry resist layer is deposited in successive layers each less than approximately twenty-five micrometers thick, each layer being patterned in registry with a previously deposited resist layer before deposit of a subsequent layer,

removing a portion of said resist layer at locations adjacent to said spacer to partially expose said metalization layer,

depositing a metal layer upon exposed positions of said metalization layer to form said mechanical overpressure stop, and

removing the remainder of said resist layer and said spacer.

2. The method of fabricating a mechanical overpressure stop on a pressure sensor according to claim 1, wherein said step of depositing said resist layer provides said layer with a thickness greater than ten micrometers, and said step of removing a portion of said resist layer develops said resist layer uniformly in vertical sections extending through its thickness so that said resist layer is removed selectively.

3. The method of claim 1, wherein said step of depositing deposits each resist layer as a continuous sheet extending uniformly over a surface, and subsequently exposes each said deposited resist layer to a pattern of radiation prior to deposition of a next successive layer.

4. The method of claim 1, wherein said step of depositing exposes the resist layer to a patterning radiation that is strongly absorbed by said resist layer, and further comprising the step of providing a thermal gradient between the top and the bottom of the resist layer to enhance exposure sensitivity to radiation at the bottom of the layer.

5. The method of claim 4, wherein the step of providing a thermal gradient includes circulating fluid over the top of the resist layer and heating said substrate during patterning.

6. The method of claim 1, further including the step of selecting the resist layer to be a material that absorbs radiation in a selected wavelength range, and wherein said step of patterning exposes at least one of the resist layers by orienting said resist layer and a source of radiation transversely to an axis of illumination to produce an exposure penumbra adjacent to exposed regions, a width of the penumbra increasing with depth such that, once exposed, the exposed resist develops in a uniform manner to delineate a pattern edge.

7. The method of claim 1, further comprising the step of electroplating a metal deposit where said metalization layer is exposed by employing said metalization layer as a conductive electrode for said electroplating.

8. The method of claim 1, wherein the step of depositing a metalization layer comprises exposing the pressure sensor to a metalizing environment to deposit a layer of metal less than approximately one micrometer thick.

9. The method of claim 7, wherein said step of electroplating with said metalization layer as an electrode includes pulse electroplating said metal deposit to a thickness substantially equal to that of the resist layer.

10. The method of claim 1, wherein said step of depositing a metal layer forms a cap over said sensing diaphragm on said silicon substrate.

11. The method of claim 10, therein said step of depositing a metal layer forms said cap over the sacrificial material, and

further comprising the step of removing the sacrificial material to leave a precision gap between the cap and the diaphragm.

12. The method of claim 10, wherein said step of depositing a metal layer forms said cap as a sheet supported about its periphery by a pedestal structure, and is spaced from said diaphragm by a thickness effective to limit displacement of the diaphragm to less than several micrometers when a pressure over several hundred psi acts on the diaphragm.

13. The method of claim 10, wherein said step of depositing a metal layer forms said cap spaced from said diaphragm by a thickness effective to limit displacement of the cap to less than one micrometer when acted upon by a pressure of several thousand psi.

15. The method of claim 4, wherein the resist comprises dry resist that is deposited in successive layers each less than approximately twenty-five micrometers thick, each layer being patterned in registry with a previous layer before deposit of a subsequent layer.

14. A method of fabricating metal mechanical structures having an out-of-plane offset greater than ten micrometers, said method comprising the steps of

forming, patterning and developing a dry film resist layer to provide a patterned surface onto which metal is deposited to thereby achieve a selected pattern of metal, and characterized in that said step of forming, patterning and developing deposits the resist layer with a thickness greater than ten micrometers in successive layers each less than approximately twenty five micrometers thick, patterns each said deposited layer in registry with a previous layer before deposit of a subsequent layer, and develops said patterned resist layer substantially uniformly in vertical sections extending through its thickness.

16. The method of claim 14, wherein the resist is exposed to a patterning radiation that is strongly absorbed by said resist, and further characterized by the step of providing a thermal gradient between top and bottom of the resist layer that enhances exposure sensitivity to radiation at the-bottom of the layer.

17. The method of claim 16, wherein said forming, patterning and developing step forms, patterns and develops the resist layer to define a pattern for forming metal features on a workpiece, and further includes supporting the workpiece on a heated stage to achieve the thermal gradient.

18. The method of claim 14, wherein the resist is formed of material that absorbs exposure radiation, and exposure is effected by orienting at least one of the resist and the source of radiation transversely to an axis of illumination to produce an exposure penumbra adjacent to exposed regions, the width of the penumbra increasing with depth such that, once exposed, the exposed resist develops in a substantially uniform manner to delineate a pattern edge.

19. The method of claim 14, wherein the resist layer has a thickness of approximately 50-150 micrometers, and further comprising the steps of depositing a metal in patterned regions to create a pressure stop lying over a semiconductor membrane formed on a substrate.

20. The method of claim 14, wherein the resist layer has a thickness of 50-150 micrometers, and further comprising the steps of

a) premetalizing patterned regions to form conductive regions of attachment, and

b) using the conductive regions of attachment as electrodes, pulse electroplating a thick metal deposit in the patterned regions.

21. The method of claim 20, wherein the step of premetalizing includes depositing a metal by exposure to a metalizing environment through a pattern mask to deposit a layer of metal less than approximately one micrometer thick.

22. The method of claim 20, where the step of electroplating includes pulse electroplating with a silicon compatible metal to a thickness substantially equal to that of the resist layer.

23. The method of claim 20, wherein the pattern of metal is deposited as a cap over a sensing diaphragm formed on a silicon wafer.

24. The method of claim 23, wherein the cap is formed over a sacrificial layer, and further comprising the step of removing the sacrificial layer to leave a precision gap between the cap and the diaphragm.

25. The method of claim 23, wherein said premetalizing step forms said cap as a sheet supported about its periphery by a pedestal structure, and spaced from said diaphragm by a thickness effective to limit displacement of the diaphragm to less than several micrometers when a pressure over several hundred psi acts on the diaphragm.

26. A method of forming a metal structure on a surface of a workpiece, said method comprising the steps of

premetalizing the surface with a metal layer,

depositing a plurality of dry film resist layers on the workpiece, wherein each said layer is patterned by exposure to an obliquely extending radiation to pattern said layer in registry with a previously deposited layer before deposit of a subsequent layer,

developing portions of said resist layers exposed to the radiation to form a pattern having a shape of the metal structure in said resist layers, and

metalizing the pattern to form the metal structure.