Band gap reference using a low voltage power supply

• US 6,031,365 A
• Filed: 03/26/1999
• Issued: 02/29/2000
• Est. Priority Date: 03/27/1998
• Status: Expired due to Fees

• Current Assignee: Lattice Semiconductor Corporation
• Original Assignee: Vantis Corp (Lattice Semiconductor Corporation)
• Inventors: Sharpe-Geisler, Bradley A.
• Primary Examiner(s): BERHANE, ADOLF D
• Application Number:
  US09/276,991
• Time in Patent Office: 340 Days
• Field of Search: 323/312, 323/313, 323/314, 323/315, 323/316, 327/538, 327/539, 327/63, 327/65, 327/66
• US Class Current: 323/313
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

A band gap reference includes an operational amplifier with an output (n23) driving the gate of three current source transistors (501-503). The first current source (501) drives the (+) opamp input (n20) and a transistor (511) functioning as a diode. The second current source (502) drives the (-) opamp input and a series resistor (R₁) and a transistor (512) functioning as a diode. The third current source (503) drives a series resistor (R₂) and diode connected transistor (513). The opamp includes first series transistors (521) and (524) connected between V_DD and V_SS, and second series transistors (522) and (525) connected between V_DD and V_SS. With only two series transistors between V_DD and V_SS at any point, only two times a CMOS transistor threshold drop (less than 1.8 volts) will occur enabling V_DD to range from 1.8-3.6 volts without altering the band gap reference output voltage (V_DIODE). Further, CMOS transistors in the circuit may operate with a 2.7 volt maximum gate to source, or gate to drain voltage.

Claims

1. A band gap reference comprising:

an operational amplifier (opamp) having a (+) input, a (-) input, and an output;

a first diode having a first terminal coupled to V_SS, and a second terminal coupled to the (+) input of the opamp;

a first current source transistor having a source to drain path coupling V_DD to the second terminal of the first diode, and a gate coupled to the output of the opamp;

a second diode having a first terminal coupled to V_SS, and a second terminal;

a first resistor having a first terminal coupled to the second terminal of the second diode, and a second terminal coupled to the (-) input of the opamp;

a second current source transistor having a source to drain path coupling V_DD to the second terminal of the first resistor, and a gate coupled to the output of the opamp;

a third diode having a first terminal coupled to V_SS, and a second terminal;

a second resistor having a first terminal coupled to the second terminal of the third diode, and a second terminal providing the output of the band gap reference; and

a third current source transistor having a source to drain path coupling V_DD to the second terminal of the second resistor, and a gate coupled to the output of the opamp.

2. The band gap reference of claim 1, wherein the first, second and third diodes comprises a PNP transistor having a base and collector coupled to form their second terminal and an emitter forming their first terminal.

3. The band gap reference of claim 1, wherein the first, second and third current source transistors are PMOS devices.

4. The band gap reference of claim 1 wherein the opamp comprises:

a first transistor (524) having a gate forming the (+) input of the opamp, and a source to drain path with a first end coupled to V_SS ;

a second transistor (525) having a gate forming the (-) input of the opamp, and a source to drain path with a first end coupled to the first end of the source to drain path of the first transistor (524);

a third transistor (521) having a source to drain path coupling V_DD to a second end of the source to drain path of the first transistor (524), and having a gate forming the output of the opamp; and

a fourth transistor (522) having a source to drain path coupling V_DD to a second end of the source to drain path of the second transistor (525), and having a gate coupled to the gate of the third transistor (521) and to the second end of the source to drain path of the second transistor (525).

5. The band gap reference of claim 1 wherein the opamp comprises:

a first transistor (524) having a gate forming the (+) input of the opamp, and a source to drain path with a first end coupled to V_SS ;

a second transistor (525) having a gate forming the (-) input of the opamp, and a source to drain path with a first end coupled to the first end of the source to drain path of the first transistor (524);

a third transistor (521) having a source to drain path coupling V_DD to a second end of the source to drain path of the first transistor (524), and having a gate coupled to the second end of the source to drain path of the first transistor (524);

a fourth transistor (522) having a source to drain path coupling V_DD to a second end of the source to drain path of the second transistor (525), and having a gate coupled to the gate of the third transistor (521);

a fifth transistor (523) having a gate coupled to the second end of the source to drain path of the second transistor (525), and a source to drain path coupling V_DD to the output of the opamp; and

a sixth transistor (526) having a gate coupled to the gate of the first transistor (524), and a source to drain path coupling the output of the opamp to V_DD.

6. The band gap reference of claim 1 further comprising:

a first PMOS transistor (530) having a source to drain path coupling V_DD to the (+) input of the opamp, and having a gate;

a second PMOS transistor (532) having a source to drain path coupling V_DD to the gate of the first PMOS transistor (530), and having a gate coupled to the output of the opamp;

a first NMOS transistor (534) having a gate coupled to the output of the opamp, and having a source to drain path coupled on a first end to V_SS ;

a second NMOS transistor (536) having a gate coupled to the gate of the first PMOS transistor (530), and a source to drain path coupling a second end of the source to drain path of the first NMOS transistor (534) to the gate of the first PMOS transistor (530).

7. A band gap reference comprising:

an operational amplifier (opamp) having a (+) input, a (-) input, and an output, the opamp comprising;

a first transistor (524) having a gate forming the (+) input of the opamp;

a second transistor (525) having a gate forming the (-) input of the opamp, and a source to drain path connected on a first end to a first end of the source to drain path of the first transistor (524); and

a current mirror comprising;

a third transistor (521) having a source to drain path coupling V_DD to a second end of the source to drain path of the first transistor (524), and having a gate; and

a fourth transistor (522) having a source to drain path coupling V_DD to a second end of the source to drain path of the second transistor (525), and having a gate coupled to the gate of the third transistor (521);

a current sink having a first terminal coupled to V_SS, and a second terminal coupled to the first end of the source to drain path of the first transistor (524) and the second transistor (525);

a first bipolar transistor (511) having an emitter to collector path coupling the (+) input of the opamp to V_SS, and a base coupled to the second terminal of the current sink;

a first current source transistor (501) having a source to drain path coupling V_DD to the (+) input of the opamp, and having a gate coupled to the output of the opamp;

a first resistor (R₁) having a first terminal coupled to the (-) input of the opamp, and a second terminal;

a second bipolar transistor (512) having an emitter to collector path coupling the second terminal of the first resistor (R₁) to V_SS, and a base coupled to the base of the first bipolar transistor (511);

a second current source transistor (502) having a source to drain path coupling V_DD to the (-) input of the opamp, and having a gate coupled to the output of the opamp;

a second resistor (R₂) having a first terminal forming the output of the band gap reference, and a second terminal;

a third bipolar transistor (513) having an emitter to collector path coupling the second terminal of the second resistor (R₂) to V_SS, and having a base coupled to V_SS ; and

a third current source transistor (503) having a source to drain path coupling V_DD to the output of the band gap reference, and having a gate coupled to the output of the opamp.

8. The band gap reference of claim 7, wherein the current sink comprises a third resistor (Rn).

9. The band gap reference of claim 7 further comprising:

a fifth transistor (528) having a source to drain path coupling the gates of the first bipolar transistor (511) and second bipolar transistor (512) to the second terminal of the current sink, and having a gate coupled to the (+) input of the opamp.

10. The band gap reference of claim 9, wherein the gate of the fourth transistor (522) is coupled to the second end of the source to drain path of the second transistor (525) to form the output of the opamp.

11. The band gap reference of claim 10 further comprising:

a fifth transistor (528) having a source to drain path coupling the gates of the first bipolar transistor (511) and second bipolar transistor (512) to the second terminal of the current sink, and having a gate coupled to the (+) input of the opamp.

12. The band gap reference of claim 9, wherein the gate of the third transistor (521) is coupled to the second end of the source to drain path of the first transistor (524), the band gap reference further comprising:

a fifth transistor (523) having a gate coupled to the second end of the source to drain path of the second transistor (525), and a source to drain path coupling V_DD to the output of the opamp; and

a sixth transistor (526) having a gate coupled to the gate of the first transistor (524), and a source to drain path coupling the output of the opamp to the second end of the current sink.

13. The band gap reference of claim 7 further comprising:

a first PMOS transistor (530) having a source to drain path coupling V_DD to the (+) input of the opamp, and having a gate;

a second PMOS transistor (532) having a source to drain path coupling V_DD to the gate of the first PMOS transistor (530), and having a gate coupled to the output of the opamp;

a first NMOS transistor (534) having a gate coupled to the output of the opamp, and having a source to drain path coupled on a first end to V_SS ;

a second NMOS transistor (536) having a gate coupled to the gate of the first PMOS transistor (530), and a source to drain path coupling a second end of the source to drain path of the first NMOS transistor (534) to the gate of the first PMOS transistor (530).

14. A band gap reference comprising:

an operational amplifier (opamp) having a (+) input, a (-) input, and an output, the opamp comprising;

a first transistor (524) having a gate forming the (+) input of the opamp;

a second transistor (525) having a gate forming the (-) input of the opamp, and a source to drain path connected on a first end to a first end of the source to drain path of the first transistor (524); and

a current mirror comprising;

a third transistor (521) having a source to drain path coupling V_DD to a second end of the source to drain path of the first transistor (524), and having a gate; and

a fourth transistor (522) having a source to drain path coupling V_DD to a second end of the source to drain path of the second transistor (525), and having a gate coupled to the gate of the third transistor (521);

a first resistor (Rn) having a first terminal coupled to V_SS and a second terminal coupled to the first end of the source to drain path of the first transistor (524);

a fifth transistor (528) having a source to drain path with a first end coupled to the second terminal of the first resistor (Rn), a second terminal, and having a gate coupled to the (+) input of the opamp;

a first bipolar transistor (511) having an emitter to collector path coupling the (+) input of the opamp to V_SS, and a base coupled to the second end of the source to drain path of the fifth transistor (528);

a first current source transistor (501) having a source to drain path coupling V_DD to the (+) input of the opamp, and having a gate coupled to the output of the opamp;

a second resistor (R₁) having a first terminal coupled to the (-) input of the opamp, and a second terminal;

a second bipolar transistor (512) having an emitter to collector path coupling the second terminal of the second resistor (R₁) to V_SS, and a base coupled to the base of the first bipolar transistor (511);

a second current source transistor (502) having a source to drain path coupling V_DD to the (-) input of the opamp, and having a gate coupled to the output of the opamp;

a third resistor (R₂) having a first terminal forming the output of the band gap reference, and a second terminal;

a third bipolar transistor (513) having an emitter to collector path coupling the second terminal of the third resistor (R₂) to V_SS, and having a base coupled to V_SS ; and

a third current source transistor (503) having a source to drain path coupling V_DD to the output of the band gap reference, and having a gate coupled to the output of the opamp.

15. The band gap reference of claim 14, wherein the gate of the third transistor (521) is coupled to the second end of the source to drain path of the first transistor (524), the band gap reference further comprising:

a fifth transistor (523) having a gate coupled to the second end of the source to drain path of the second transistor (525), and a source to drain path coupling V_DD to the output of the opamp; and

a sixth transistor (526) having a gate coupled to the gate of the first transistor (524), and a source to drain path coupling the output of the opamp to the second terminal of the first resistor (Rn).

16. The band gap reference of claim 15 further comprising:

a first PMOS transistor (530) having a source to drain path coupling V_DD to the (+) input of the opamp, and having a gate;

a second PMOS transistor (532) having a source to drain path coupling V_DD to the gate of the first PMOS transistor (530), and having a gate coupled to the output of the opamp;

a first NMOS transistor (534) having a gate coupled to the output of the opamp, and having a source to drain path coupled on a first end to V_SS ;

a second NMOS transistor (536) having a gate coupled to the gate of the first PMOS transistor (530), and a source to drain path coupling a second end of the source to drain path of the first NMOS transistor (534) to the gate of the first PMOS transistor (530).

17. The band gap reference of claim 16,

wherein the first transistor (524), the second transistor (525), and the sixth transistor (523) are NMOS transistors, and

wherein the third transistor (521), the fourth transistor (522), the fifth transistor (528), the first current source transistor (501), the second current source transistor (502), the third current source transistor (502), and the sixth transistor (526) are PMOS transistors.