Solid-state imaging device
First Claim
1. A solid-state imaging device comprising:
- a storage section which is formed on a surface portion of a semiconductor substrate to receive and store signal charges;
a discharge section formed on the surface portion of the semiconductor substrate at a predetermined distance from said storage section;
a reset section constituted by a depletion-type MOS transistor formed between said storage section and said discharge section; and
a reset voltage setting section for setting a voltage of a reset pulse to be applied to said reset section,wherein said reset voltage setting section has a resistive element and a depletion-type MOS transistor series-connected between one end to which a predetermined voltage is applied and the other end which is grounded, and a node for connecting said resistive element to said depletion-type MOS transistor, the node is connected to a reset voltage application electrode, and said depletion-type MOS transistor has a depletion-type impurity layer formed by the same process as that for a depletion-type impurity layer of said reset section.
1 Assignment
0 Petitions
Accused Products
Abstract
A solid-state imaging device has a storage section formed on a surface portion of a semiconductor substrate to receive and store signal charges, a discharge section formed on the surface portion of the substrate at a predetermined distance from the storage section, a reset section constituted by a depletion-type MOS transistor formed between the storage section and the discharge section, and reset voltage setting means for setting a voltage of a reset pulse to be applied to the reset section. The reset voltage setting section has first and second resistive elements series-connected between one end to which a predetermined voltage is applied and the other end which is grounded. A node which connects the first resistive element to the second resistive element is connected to a reset voltage application electrode. The second resistive element consists of a depletion-type MOS transistor, and the depletion-type MOS transistor has a depletion-type impurity layer formed by the same process as that of a depletion-type impurity layer of the reset section.
-
Citations
20 Claims
-
1. A solid-state imaging device comprising:
-
a storage section which is formed on a surface portion of a semiconductor substrate to receive and store signal charges; a discharge section formed on the surface portion of the semiconductor substrate at a predetermined distance from said storage section; a reset section constituted by a depletion-type MOS transistor formed between said storage section and said discharge section; and a reset voltage setting section for setting a voltage of a reset pulse to be applied to said reset section, wherein said reset voltage setting section has a resistive element and a depletion-type MOS transistor series-connected between one end to which a predetermined voltage is applied and the other end which is grounded, and a node for connecting said resistive element to said depletion-type MOS transistor, the node is connected to a reset voltage application electrode, and said depletion-type MOS transistor has a depletion-type impurity layer formed by the same process as that for a depletion-type impurity layer of said reset section. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A solid-state imaging device comprising:
-
a floating diffusion layer which is formed on a surface portion of a semiconductor substrate to receive and store signal charges transferred from an adjacent CCD; a reset drain formed on the surface portion of the semiconductor substrate to oppose said floating diffusion layer through a channel region; a reset gate electrode which is formed on said channel region through an insulating film, and electrically connects said floating diffusion layer to said reset drain through said channel region upon application of a reset pulse to transfer the signal charges stored in said floating diffusion layer to said reset drain; and a reset voltage setting circuit for setting a voltage of the reset pulse to be applied to said reset gate electrode, wherein said reset voltage setting circuit has a resistive element and a depletion-type MOS transistor series-connected between one end to which a predetermined voltage is applied and the other end which is grounded, and a node for connecting said resistive element to said depletion-type MOS transistor, the node is connected to said reset gate electrode, a channel region of said depletion-type MOS transistor being provided by the same process as that for said channel region of a depletion-type reset transistor including said floating diffusion layer, said reset drain, and said reset gate electrode. - View Dependent Claims (7, 8, 9, 10)
-
-
11. A solid-state imaging device comprising:
-
a floating diffusion layer which is formed on a surface portion of a semiconductor substrate to receive and store signal charges transferred from an adjacent CCD; a reset drain formed on the surface portion of the semiconductor substrate to oppose said floating diffusion layer through a channel region; a reset gate electrode which is formed on said channel region through an insulating film, and electrically connects said floating diffusion layer to said reset drain through said channel region upon application of a reset pulse to transfer the signal charges stored in said floating diffusion layer to said reset drain; and a reset voltage setting circuit for setting a voltage of the reset pulse to be applied to said reset gate electrode, wherein said reset voltage setting circuit has a resistive element and a depletion-type MOS transistor series-connected between one end to which a predetermined voltage is applied and the other end which is grounded, and a node for connecting said resistive element to said depletion-type MOS transistor, the node is connected to a reset voltage application electrode, a channel region of said depletion-type MOS transistor being provided by the same process as that for said channel region of a depletion-type reset transistor including said floating diffusion layer, and reset drain, and said reset gate electrode. - View Dependent Claims (12, 13, 14, 15)
-
-
16. A solid-state imaging device comprising:
-
a floating diffusion layer which is formed on a surface portion of a semiconductor substrate to receive and store signal charges transferred from an adjacent CCD; a charge detecting section for detecting the signal charges stored in said floating diffusion layer and outputting a detection signal; a reset drain formed on the surface portion of the semiconductor substrate to oppose said floating diffusion layer through a channel region; a reset gate electrode which is formed on said channel region through an insulating film, and electrically connects said floating diffusion layer to said reset drain through said channel region upon application of a reset pulse to transfer the signal charges stored in said floating diffusion layer to said reset drain; and a voltage applying section, having an output terminal connected to said reset drain, for outputting a predetermined voltage and applying the voltage to said reset drain and a resistance-type voltage dividing unit having one end connected to the output terminal of said voltage applying section, the other end which is grounded, a resistive element and a depletion-type MOS transistor series-connected between said one end and said other end, and a node for connecting said resistive element to said depletion-type MOS transistor, said node being connected to said reset gate electrode, wherein a channel region of said depletion-type MOS transistor is provided by the same process as that for said channel region of a depletion-type reset transistor including said floating diffusion layer, and reset drain, and said reset gate electrode. - View Dependent Claims (17, 18, 19, 20)
-
Specification