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Process for reducing copper oxide during integrated circuit fabrication

  • US 6,033,584 A
  • Filed: 12/22/1997
  • Issued: 03/07/2000
  • Est. Priority Date: 12/22/1997
  • Status: Expired due to Term
First Claim
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1. A method for reducing the amount of copper oxide formed over a surface of copper on a semiconductor wafer, the method comprising the steps of:

  • placing the semiconductor wafer in a gap between a pair of electrodes arranged within a reaction chamber;

    establishing a flow of H2 gas through said reaction chamber;

    adjusting the pressure within said reaction chamber to a pressure within the range of about 0.4 Torr to about 1.2 Torr; and

    applying RF power between the pair of electrodes for selectively etching said copper oxide from said surface of copper on said semiconductor wafer.

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