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Dot-junction photovoltaic cells using high-absorption semiconductors

  • US 6,034,321 A
  • Filed: 03/24/1998
  • Issued: 03/07/2000
  • Est. Priority Date: 03/24/1998
  • Status: Expired due to Fees
First Claim
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1. A photovoltaic device comprising:

  • an electrically inactive semiconductor substrate; and

    ,a thin active layer direct bandgap semiconductor grown directly on the substrate;

    wherein said electrically inactive semiconductor substrate and said thin active layer semiconductor combine to have at least three surfaces, a first surface serving as an entrance point for light, a second surface delineating the active photovoltaic cell from the substrate and, a third surface configured with a plurality of rectifying contacts herein the third surface contains at least one electrical contact to a localized rectifying contact and at least one ohmic contact to the active semiconductor layer.

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