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Methods of operating ferroelectric memory devices having linear reference cells therein

  • US 6,034,387 A
  • Filed: 09/14/1999
  • Issued: 03/07/2000
  • Est. Priority Date: 06/17/1997
  • Status: Expired due to Term
First Claim
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1. A method of forming a ferroelectric memory device having a memory cell array and a reference cell array, comprising steps of:

  • a) forming a memory cell storage electrode and a ferroelectric layer pattern on a predetermined region of the memory cell array, and at the same time forming a reference cell storage electrode on a predetermined region of the reference cell array;

    b) forming a dielectric layer pattern exposing the ferroelectric layer pattern; and

    c) forming a memory cell plate electrode covering the exposed ferroelectric layer pattern, and a reference cell plate electrode covering the dielectric layer on the reference cell storage electrode.

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