Variable capacitor using resistor generated heat to control dielectric thickness
First Claim
1. A capacitor with a variable capacitance formed on a semiconductor substrate, said capacitor comprising of:
- a first storage electrode of conductive material;
a second storage electrode of conductive material; and
a variable length means coupled between said first storage electrode and said second storage electrode, for splitting said first storage electrode and said second storage electrode apart with a dielectric thickness, and varying said capacitance by varying said dielectric thickness through an electrical input by thermal buckling of said variable length means under said electrical input.
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Abstract
The invention discloses a variable capacitor including a first storage electrode, a second storage electrode, and a variable length means coupled therebetween. The capacitance can be adjusted by varying a dielectric space therebetween according with an electrical input. The method for manufacturing a variable capacitor in an integrated circuit includes the steps of forming a first storage electrode, a first dielectric layer, a second dielectric layer, a pair of contact channels, and a second sacrificial layer. The method further includes forming a third sacrificial layer, a second storage electrode, a resistor pattern, a passivation layer, and etching the third, the second, and the first sacrificial layer for having a dielectric space between the first storage electrode and the second storage electrode.
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Citations
9 Claims
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1. A capacitor with a variable capacitance formed on a semiconductor substrate, said capacitor comprising of:
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a first storage electrode of conductive material; a second storage electrode of conductive material; and a variable length means coupled between said first storage electrode and said second storage electrode, for splitting said first storage electrode and said second storage electrode apart with a dielectric thickness, and varying said capacitance by varying said dielectric thickness through an electrical input by thermal buckling of said variable length means under said electrical input. - View Dependent Claims (2, 3)
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4. A capacitor with a variable capacitance formed on a semiconductor substrate, said capacitor comprising of:
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a first storage electrode of conductive material; a second storage electrode of conductive material; a variable length means coupled between said first storage electrode and said second storage electrode, for splitting said first storage electrode and said second storage electrode apart with a dielectric thickness, and varying said capacitance by varying said dielectric thickness through an electrical input; and at least two layers of dielectric material placed between and adjacent to said first storage electrode and said second storage electrode plate. - View Dependent Claims (5, 6)
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7. A capacitor with a variable capacitance formed on a semiconductor substrate, said capacitor comprising of:
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a first storage electrode of conductive material; a second storage electrode of conductive material; and a pair of arms having a pair of thermal resistors therewithin, said pair of arms coupled between said first storage electrode and said second storage electrode for splitting said first storage electrode and said second storage electrode apart with a dielectric thickness, said pair of resistors being connected to an electrical input, and as said resistors being heated by said electric input for generating thermal buckling of said arms, said capacitance being varied by varying said dielectric thickness. - View Dependent Claims (8, 9)
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Specification