Active matrix substrate and display device incorporating the same

• US 6,034,747 A
• Filed: 09/25/1996
• Issued: 03/07/2000
• Est. Priority Date: 09/27/1995
• Status: Expired due to Term

• Current Assignee: Unified Innovative Technology, LLC
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Shimada, Takayuki, Ban, Atsushi, Tanaka, Shinya, Katayama, Mikio
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): NGO, HUYEN LE
• Application Number:
  US08/720,152
• Time in Patent Office: 1,259 Days
• Field of Search: 349/111, 349/39, 349/44, 349/38, 349/42, 349/43
• US Class Current: 349/43
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136218 Shield electrodes
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

An active matrix substrate includes a gate line, a source line, and a thin film transistor provided in the vicinity of an intersection between the gate line and the source line. The thin film transistor includes a gate electrode connected to the gate line, a source electrode connected to the source line, and a drain electrode connected to a pixel electrode. An interlayer insulating film is provided over the thin film transistor, the gate line, and the source line. The pixel electrode is provided on the interlayer insulating film, and is connected to the drain electrode via a contact hole formed in the interlayer insulating film. A conductive layer extends over a channel region of the thin film transistor via the interlayer insulating film.

Claims

1. An active matrix substrate used in a display device comprising:

a gate line;

a source line;

a thin film transistor (TFT) provided in the vicinity of an intersection between the gate line and the source line, the thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the source line, a drain electrode, and a channel region;

an interlayer insulating film having a planer surface provided over the thin film transistor, the gate line, and the source line, wherein the interlayer insulating film is an organic film;

a transparent pixel electrode provided on the planer surface of the interlayer insulting film and connected to the drain electrode via a contact hole formed in the interlayer insulating film, wherein the pixel electrode is formed of a transparent conductive material through which light passes during operation of the display device and the pixel electrodes having edges overlapping the gate and source lines; and

a conductive layer formed over the channel region of the thin film transistor via the interlayer insulating film to minimize deterioration of an OFF-characteristic of the thin film transistor resulting from extended application of voltage to the thin film transistor.

2. An active matrix substrate according to claim 1, wherein the conductive layer is electrically connected to the drain electrode.

3. An active matrix substrate according to claim 1, wherein the conductive layer is set at a same potential as the source electrode.

4. An active matrix substrate according to claim 1, wherein the conductive layer is in a floating state.

5. An active matrix substrate according to claim 1, wherein the conductive layer is formed of a transparent conductive material.

6. An active matrix substrate according to claim 1, wherein the conductive layer is formed of a light-intercepting conductive material.

7. An active matrix substrate according to claim 1, wherein the conductive layer is formed of a portion of the pixel electrode.

8. An active matrix substrate according to claim 1, wherein the conductive layer is formed so as to at least partially overlap both the source electrode and the drain electrode via the interlayer insulating film.

9. An active matrix substrate according to claim 1, wherein the interlayer insulating film is formed of an organic material.

10. A display device comprising:

an active matrix substrate according to claim 1, a display medium layer, and a counter substrate, the counter substrate opposing the active matrix substrate with the display medium layer interposed therebetween.

11. An active matrix substrate according to claim 10, wherein the counter substrate comprises a color filter layer which does not include a black matrix.

12. An active matrix substrate according to claim 1, wherein a thickness of the interlayer insulating film is about 1.5 micrometers or more.

13. An active matrix substrate used in a display device comprising:

a gate line;

a source line;

a thin film transistor provided in the vicinity of an intersection between the gate line and the source line, the thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the source line, a drain electrode, and a channel region;

an interlayer insulating film provided over the thin film transistor, the gate line, and the source line, wherein the interlayer insulating film is formed of an organic material; and

a transparent pixel electrode provided on the interlayer insulating film and connected to the drain electrode via a contact hole formed in the interlayer insulating film, wherein the pixel electrode is formed of a transparent conductive material through which light passes during operation of the display device and the pixel electrodes having edges aligned with the source and gate lines, and the pixel electrode extending from the contact hole to over the channel region of the thin film transistor.

14. An active matrix display substrate according to claim 13, wherein a thickness of the interlayer insulating film is about 1.5 micrometers or more.

15. An active matrix display substrate according to claim 13, wherein the pixel electrode at least partially overlaps both the source electrode and the drain electrode via the interlayer insulating film.

16. An active matrix display substrate according to claim 13, comprising:

a display medium layer and a counter substrate, the counter substrate opposing the active matrix substrate with the display medium layer interposed therebetween.

17. An active matrix display substrate according to claim 13, wherein the counter substrate comprises a color filter layer which does not include a black matrix.

18. An active matrix substrate used in a display device comprising:

a gate line;

a source line;

a thin film transistor (TFT) provided in the vicinity of an intersection between the gate line and the source line, the thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the source line, a drain electrode, and a channel region;

an interlayer insulating film having a planer surface provided over the thin film transistor, the gate line, and the source line, wherein the interlayer insulating film is an organic film;

a transparent pixel electrode provided on the planer surface of the interlayer insulting film and connected to the drain electrode via a contact hole formed in the interlayer insulating film, wherein the pixel electrode is formed of a transparent conductive material through which light passes during operation of the display device and the pixel electrodes have edges aligned with and overlapping the gate and source lines, and

a conductive layer formed over the channel region of the thin film transistor via the interlayer insulating film.

19. An active matrix substrate used in a display device comprising:

a gate line;

a source line including;

a thin film transistor provided in the vicinity of an intersection between the gate line and the source line, the thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the source line, a drain electrode, and a channel region;

a transparent conductive film connected to the drain electrode;

an interlayer insulating film having a planer surface provided over the thin film transistor, the gate line, the source line, the pixel capacitive line and the wherein the interlayer insulating film is formed of an organic material,

a transparent and conductive pixel electrode provided on the planer surface of the interlayer insulating film having edges aligned with and overlapping the gate and source lines, and connected to the transparent conductive film via a contact hole formed in the interlayer insulating film;

a pixel capacitive line separated from the pixel electrode by the interlayer insulating film and aligned with the contact hole in the pixel electrode, wherein the transparent conductive film extends from the drain electrode to the capacitive line and overlaps the capacitive line to connect to the pixel electrode at the contact hole.