Radiation detector with shielding electrode

• US 6,037,595 A
• Filed: 10/14/1997
• Issued: 03/14/2000
• Est. Priority Date: 10/13/1995
• Status: Expired due to Term

• Current Assignee: Digirad Corporation
• Original Assignee: Digirad Corporation
• Inventors: Lingren, Clinton L.
• Primary Examiner(s): Westin, Edward P.
• Assistant Examiner(s): HANIG, RICHARD E
• Application Number:
  US08/950,269
• Time in Patent Office: 882 Days
• Field of Search: 250/370.01, 250/370.09, 250/370.13, 250/370.14, 257/428
• US Class Current: 250/370.01
• CPC Class Codes: G01T 1/241 Electrode arrangements, e.g. continuous or parallel strips or the like constructional or manufacturing details H01L31/00

Abstract

A cross-strip radiation detector for detecting ionizing radiation with two non-parallel sets of signal strips formed on the same side of the detector. The detector includes a semiconductor having at least two sides. A bias electrode is formed on one side of the semiconductor. A signal electrode is formed on a side of the semiconductor and is used to detect the energy level of the ionizing radiation. A third electrode (the control electrode) is also formed on the semiconductor. The control electrode shares charges induced by the ionizing radiation with the signal electrode, shielding the signal electrode until the charge clouds are close to the signal electrode. The control electrode also alters the electric field within the semiconductor, such that the field guides the charge clouds toward the signal electrode when the clouds closely approach the signal electrode. Large detector arrays can be formed by butting such coplanar cross-strip detectors side-by-side without little dead area. High-voltage decoupling circuitry can be eliminated by maintaining the coplanar signal strips at substantially the same voltage.

Claims

1. A cross-strip radiation detector, comprising:

(a) a semiconductor having a plurality of sides and of sufficient thickness to interact with ionizing radiation;

(b) at least one independent bias electrode formed on a first side of the semiconductor and maintained at a bias voltage;

(c) a plurality of signal electrodes formed on a second side of the semiconductor opposing the first side and coupled to form at least two independent signal strips parallel to each other, each signal strip including one or more electrically coupled signal electrodes and being set at a signal electrode voltage and operable to produce a signal indicative of an amount of charge produced in the semiconductor in response to an ionizing event and to provide a coordinate of a location of the ionizing event;

(d) at least one shield electrode strip, formed on the second side of the semiconductor in a direction that is not parallel to the signal strips and electrically insulated from the signal strips, the shield electrode strip operable to produce an identification signal induced by the ionizing event to determine another coordinate of the location of the ionizing event; and

(e) a signal conditioning circuit coupled to the signal strips and the shield electrode strip and configured to process the signal from at least one signal strip to determine the amount of charge of the ionizing event, without reference to the identification signal.

2. The cross-strip radiation detector of claim 1, wherein the shield electrode strip is maintained at a potential near the signal electrode voltage.

3. The cross-strip radiation detector of claim 1, further comprising a circuit layer formed over the second side of the semiconductor and configured to extend within the perimeter of the second surface, the circuit layer including the signal conditioning circuit which is connected to the shield electrode strip and the signal strips and produces information indicative of the ionizing radiation.

4. The cross-strip radiation detector of claim 3, wherein the signal conditioning circuit includes a plurality of amplifiers each designated to receive and amplify signals from each of the signal strips and control electrode strip.

5. The cross-strip radiation detector of claim 1, wherein the shield electrode strip has an area that is larger than the total area of the signal electrodes to substantially reduce induced charge on the signal electrodes.

6. The cross-strip radiation detector of claim 1, further comprising a control electrode grid having two mutually orthogonal and intersecting sets of thin parallel conducting lines formed on the second surface of the semiconductor and defining an array of open areas that encase the signal electrodes, wherein the control electrode grid is insulated from the signal electrodes and the shield electrode strip and is operable to effect a charge focusing mechanism.

7. The cross-strip radiation detector of claim 6, wherein the control electrode grid is maintained at a control potential ranging between the bias voltage and the signal electrode voltage.

8. A cross-strip radiation detector, comprising:

(a) a semiconductor having a plurality of sides and of sufficient thickness to interact with ionizing radiation;

(b) at least one independent bias electrode formed on a first side of the semiconductor;

(c) a plurality of signal electrodes formed on a second side of the semiconductor opposing the first side and intercoupled as at least two independent signal strips, each of the signal electrodes maintained at a potential difference with respect to the bias electrode to effect a bias electrical field within the semiconductor;

(d) a plurality of shield electrodes formed on the second side of the semiconductor and intercoupled as at least one independent shield signal strip to produce an identification signal caused by an ionizing event to determine the location of the ionizing event according to a signal from the signal strips; and

(e) at least one control electrode formed on the second side of the semiconductor relative to the signal electrodes and insulated from the signal electrodes and shield electrodes, the control electrode having a control potential to facilitate collection by the signal electrodes of charge carriers caused by the ionizing radiation.

9. The cross-strip radiation detector of claim 8, wherein the control electrode includes a plurality of intersecting conducting strips to form a control grid on the second surface and defines a plurality of grid open areas, each of the signal electrodes being located in one of the grid open areas and insulated from the control grid.

10. The cross-strip radiation detector of claim 9, wherein each of the shield electrodes is located within one of the grid open areas.

11. The cross-strip radiation detector of claim 8, wherein the shield electrodes are maintained at the same potential as the signal electrodes.

12. The cross-strip radiation detector of claim 8, further comprising a circuit layer formed over the second side of the semiconductor and configured to extend within the perimeter of the second surface, the circuit layer including a signal conditioning circuit which is connected to the shield electrode strip and the signal strips and determines information indicative of the ionizing radiation according to signals from the shield electrode strip and the signal strips.

13. The cross-strip radiation detector of claim 12, wherein the signal conditioning circuit includes a plurality of amplifiers each designated to receive and amplify signals from each of the signal strips and the shield electrode strip.

14. A cross-strip radiation detector, comprising:

(a) a semiconductor having a plurality of sides and of sufficient thickness to interact with ionizing radiation;

(b) at least one independent bias electrode formed on a first side of the semiconductor;

(c) a first electrode layer formed on a second side of the semiconductor opposing the first side, comprising an array of signal electrodes which are intercoupled to form parallel signal strips which are maintained at a potential difference with respect to the bias electrode to effect a bias electrical field within the semiconductor and is operable to produce signals indicative of the ionizing radiation; and

(d) a second electrode layer disposed in proximity of the second side of the semiconductor and capacitively coupled to the semiconductor, the second electrode layer having a plurality of independent parallel shield electrode strips that are insulated from and not parallel to the signal strips, wherein the shield electrode strips are operable to produce identification signals caused by an ionizing event to determine the location of the ionizing event according to signals from the signal strips caused by the ionizing event.

15. The cross-strip radiation detector of claim 14, further comprising a processing circuit layer formed on the second electrode layer and electrically connected to the first and second electrode layers to receive the signals from the signal strips and shield electrode strips.

16. The cross-strip radiation detector of claim 15, wherein the processing circuit layer includes a plurality of amplifiers each designated to receive and amplify signals from each of the signal strips and the shield electrode strips.

17. The cross-strip radiation detector of claim 14, wherein the first electrode layer further includes a control electrode grid having two intersecting sets of thin parallel conducting lines formed on the second surface of the semiconductor and defining an array of open areas that encase the signal electrodes, wherein the control electrode grid is insulated from the signal electrodes and is operable to effect a charge focusing mechanism.

18. The radiation imaging device of claim 14, further comprising an insulation layer formed on the first electrode layer on the second side of the semiconductor, wherein the second electrode layer is formed over the insulation layer.

19. The radiation imaging device of claim 14, further comprising a separate substrate upon which the second electrode layer is formed, wherein the second side of the semiconductor having the first electrode layer is mounted on the substrate to overlay the first and second electrode layers.

20. A radiation imaging device, comprising a plurality of cross-strip detector elements arranged relative to one another side-by-side to form a detector array, each cross-strip detector element comprising:

(1) a semiconductor having a plurality of sides and of sufficient thickness to interact with ionizing radiation;

(2) at least one independent bias electrode formed on a first side of the semiconductor;

(3) a first electrode layer formed on a second side of the semiconductor opposing the first side, comprising an array of signal electrodes which are intercoupled to form parallel signal strips which are maintained at a potential difference with respect to the bias electrode to effect a bias electrical field within the semiconductor and are operable to produce signals indicative of the ionizing radiation;

(4) an insulation layer formed on the first electrode layer on the second side of the semiconductor;

(5) a second electrode layer formed over the insulator layer and capacitively coupled to the semiconductor, the second electrode layer having a plurality of independent parallel shield electrode strips that are insulated from and not parallel to the signal strips, wherein the shield electrode strips are operable to produce identification signals caused by an ionizing event to determine the location of the ionizing event according to signals from the signal strips caused by the ionizing event.

21. The radiation imaging device of claim 20, wherein the signal electrodes and the shield electrode strips have approximately the same potential.

22. The radiation imaging device of claim 20, further comprising a signal processor which receives and processes signals from the detector array to form an electronic image representation of the ionizing radiation.

23. A method of forming a cross-strip radiation detector, comprising:

(a) providing a semiconductor which has a plurality of sides and of sufficient thickness to interact with ionizing radiation;

(b) forming at least one independent bias electrode on a first side of the semiconductor;

(c) forming a first electrode layer on a second side of the semiconductor opposing the first side, the first electrode layer having an array of signal electrodes which are coupled to form parallel signal strips;

(d) forming a second electrode layer on the second side which has a plurality of independent parallel shield electrode strips, that are insulated from and not parallel to the signal strips, to shield the signal electrodes from trapped charge; and

(e) applying a bias electrical field within the semiconductor between the bias electrode on the first surface and the signal electrodes on the second surface to produce a first set of signals from the signal electrodes and a second set of signals from the shield electrode strips;

(f) processing one of the first set of signals to determine an amount of the charge produced in the semiconductor by the ionizing event, without reference to the second set of signals; and

(g) using the first and second set of signals to respectively determine a first position along a direction perpendicular to the signal strips and a second position along a direction perpendicular to the shield electrode strips so as to determine a location of the ionizing event in the semiconductor.

24. The method of claim 23, comprising forming an insulation layer on the first electrode layer, wherein the second electrode layer is directly formed on the insulation layer.

25. The method of claim 23, wherein the second electrode layer is formed on a mounting substrate upon which the semiconductor is mounted with the first electrode layer overlaying the second electrode layer.

26. A radiation detector, comprising:

(a) a semiconductor having a plurality of sides and of sufficient thickness to interact with ionizing radiation;

(b) at least one independent bias electrode formed on at least two adjacent sides of the semiconductor;

(c) a signal electrode formed on a signal side of the semiconductor that is not covered by the bias electrode, wherein the signal electrode is electrically insulated from the bias electrode and is maintained at a bias potential with respect to the bias electrode to effect a bias electrical field within the semiconductor so that the signal electrode is operable to produce signals indicative of the ionizing radiation; and

(d) a shield electrode disposed in proximity of the signal side of the semiconductor and capacitively coupled to the semiconductor, wherein the shield electrode is insulated from the semiconductor, the bias and signal electrodes and operable to reduce the induced charge on the signal electrode.

27. The radiation detector of claim 26, further comprising a separate substrate upon which the shield electrode is formed, wherein the signal side of the semiconductor having the signal electrode is mounted on the substrate to overlay the signal and shield electrodes.

28. The radiation detector of claim 26, further comprising an insulation layer formed on the signal side of the semiconductor, wherein the shield is directly formed over the insulation layer.