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Measurement of the interface trap charge in an oxide semiconductor layer interface

  • US 6,037,797 A
  • Filed: 07/11/1997
  • Issued: 03/14/2000
  • Est. Priority Date: 07/11/1997
  • Status: Expired due to Term
First Claim
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1. A method of determining charge associated with traps present in a semiconductor oxide interface between a semiconductor wafer and an oxide layer disposed on the wafer, the method comprising the steps of:

  • depositing a dose of charge over a portion of a surface of the oxide layer;

    measuring a resultant value of surface potential barrier at the portion of the surface of the oxide layer; and

    determining a value of charge associated with interface trap from the surface potential barrier and the deposited charge dose.

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