Liquid crystal display and method of manufacturing the same
First Claim
1. A method of manufacturing a liquid crystal display comprising the steps of:
- forming a gate bus line, a gate electrode extending from the gate bus line, and a gate pad placed at an end portion of the gate bus line, with a first conductive material on a substrate;
sequentially depositing a first insulating material, an intrinsic semiconductor material, a doped semiconductor material and a second conductive material on the gate bus line, the gate electrode and the gate pad;
patterning the second conductive material to form a source bus line, a source electrode extending from the source bus line, a drain electrode, and a source pad at an end portion of the source bus line;
forming a semiconductor layer, a gate insulating layer, and a gate pad protecting layer covering a first portion of the gate pad, by simultaneously patterning the intrinsic semiconductor material and the first insulating material, the gate pad protecting layer including a portion of the first insulating material and the semiconductor material; and
forming a passivation layer by depositing a second insulating material over the substrate, the source bus line, the source electrode, the drain electrode, and the source pad, and patterning the passivation layer to expose a second portion of the gate pad and the gate pad protecting layer.
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Accused Products
Abstract
A liquid crystal display includes a gate bus line, a gate electrode extending from the gate bus line, and a gate pad placed at an end portion of the gate bus line with a first conductive material formed on a substrate. A first insulating material, an intrinsic semiconductor material, a doped semiconductor material and a second conductive material are sequentially deposited on the gate bus line, the gate electrode, and the gate pad. The second conductive material is patterned to form a source bus line, a source electrode extending from the source bus line, a drain electrode, and a source pad at an end portion of the source bus line. A semiconductor layer, a gate insulating layer, and a gate protecting layer covering a first portion of the gate pad are formed by simultaneously patterning the intrinsic semiconductor material and the first insulating material. A passivation layer is formed by depositing a second insulating material over the substrate, the source bus line, the source electrode, the drain electrode, and the source pad, and patterning the passivation layer to expose a second portion of the gate pad and the gate pad protecting layer.
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Citations
22 Claims
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1. A method of manufacturing a liquid crystal display comprising the steps of:
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forming a gate bus line, a gate electrode extending from the gate bus line, and a gate pad placed at an end portion of the gate bus line, with a first conductive material on a substrate; sequentially depositing a first insulating material, an intrinsic semiconductor material, a doped semiconductor material and a second conductive material on the gate bus line, the gate electrode and the gate pad; patterning the second conductive material to form a source bus line, a source electrode extending from the source bus line, a drain electrode, and a source pad at an end portion of the source bus line; forming a semiconductor layer, a gate insulating layer, and a gate pad protecting layer covering a first portion of the gate pad, by simultaneously patterning the intrinsic semiconductor material and the first insulating material, the gate pad protecting layer including a portion of the first insulating material and the semiconductor material; and forming a passivation layer by depositing a second insulating material over the substrate, the source bus line, the source electrode, the drain electrode, and the source pad, and patterning the passivation layer to expose a second portion of the gate pad and the gate pad protecting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A liquid crystal display comprising:
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a substrate; a gate bus line including a first conductive material on the substrate; a gate electrode extending from the gate bus line; a gate pad at an end portion of the gate bus line; a gate insulating layer including a first insulating material covering the gate electrode and the gate bus line; a semiconductor layer including an intrinsic semiconductor material on a portion of the gate insulating layer over the gate electrode; a gate pad protecting layers including a portion of the first insulating material and the semiconductor materials covering a border portion of the gate pad; a source electrode including a second conductive material and in contact with one side of the semiconductor layer; a source bus line connected to the source electrode; a source pad at an end portion of the source bus line; and a passivation layer including a second insulating material and covering the substrate excluding the gate pad and the gate pad protecting layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification