×

Precision programming of nonvolatile memory cells

  • US 6,038,174 A
  • Filed: 11/20/1998
  • Issued: 03/14/2000
  • Est. Priority Date: 03/06/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. An integrated circuit memory system comprising:

  • control means for controlling operations of said integrated circuit memory system;

    a plurality of memory cells, each memory cell comprising a source, drain, control gate and floating gate, said floating gate capable of storing electric charge, said memory cells programmable by hot carrier injection of electric charge to said floating gate corresponding to input signals to said integrated memory system; and

    circuit means, responsive to said control means, for iteratively applying incrementally varying voltages to a source, drain, or control gate of a selected memory cell and for controlling a current independently of said input signals, said current flowing between said source and drain during programming of said selected memory cell so that an amount of electric charge stored on said floating gate of said selected memory cell is precisely controlled.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×