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High-voltage generator for word lines of a bank-activated semiconductor memory device

  • US 6,038,178 A
  • Filed: 12/23/1998
  • Issued: 03/14/2000
  • Est. Priority Date: 12/24/1997
  • Status: Expired due to Term
First Claim
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1. A high-voltage generator for word lines of a bank-activated semiconductor memory device, the generator comprising:

  • a high-voltage generation circuit that includes a number of unit high-voltage generation means that each output a high-voltage signal of a same level; and

    a multi-bank circuit that includes a number of unit bank circuits that are each driven independently in response to the high-voltage signal from corresponding unit high-voltage generation means, a corresponding row decoder output signal, and a corresponding column decoder output signal;

    wherein each of the row decoder output signals and each of the column decoder output signals are different from each other.

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