PECVD of compounds of silicon from silane and nitrogen

• US 6,040,022 A
• Filed: 04/14/1998
• Issued: 03/21/2000
• Est. Priority Date: 08/14/1987
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wang, David N. K., Maydan, Dan, Chang, Mei, White, John M.
• Primary Examiner(s): King, Roy V.
• Application Number:
  US09/059,734
• Time in Patent Office: 707 Days
• Field of Search: 427/579, 427/578, 427/255.2, 427/255.1, 427/255, 427/255.18, 427/255.27, 427/255.37, 427/255.394
• US Class Current: 427/579
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus

Abstract

An inlet gas manifold for a vacuum deposition chamber incorporates inlet apertures which increase in diameter or cross-section transverse to the direction of gas flow. The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia. The inlet manifold containing the increasing-diameter gas inlet holes provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.

Claims

1. A plasma enhanced chemical vapor deposition process for the deposition of compounds of silicon selected from the group consisting of silicon oxide and silicon oxynitride having a substantially uniform thickness on a substrate from a mixture of precursor gases including silane comprising

activating said precursor gases by passing them through a parallel plate electrode having a face plate including an array of tapered openings therein, wherein the openings for gas inlet are smaller than the openings for gas outlet and the taper is sufficient to increase the dissociation of one or more precursor gases as they pass through said faceplate, while applying radio frequency energy to the plate.

2. A process according to claim 1 wherein silicon oxide is deposited and the precursor gases are silane and N₂ O.

3. A process according to claim 1 wherein silicon oxynitride is deposited from precursor gases including silane, ammonia, N₂ O and nitrogen.

4. A plasma enhanced chemical vapor deposition process for the deposition of compounds of silicon having a substantially uniform thickness on a substrate from a mixture of precursor gases including silane and nitrogen comprising

activating said precursor gases by passing them through a parallel plate electrode having an array of tapered openings therein, wherein the openings for gas inlet are smaller than the openings for gas outlet, and wherein the openings for gas outlet are large enough to permit gas dissociation and the inlet openings have a length and diameter which prevents plasma penetration into the parallel plate electrode.

5. A plasma enhanced chemical vapor deposition process according to claim 4 wherein said array is in the form of an interlocking face centered hexagonal pattern.