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Insulated trench semiconductor device with particular layer structure

  • US 6,040,599 A
  • Filed: 09/25/1996
  • Issued: 03/21/2000
  • Est. Priority Date: 03/12/1996
  • Status: Expired due to Term
First Claim
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1. An insulated gate semiconductor device, comprising:

  • a first semiconductor layer of a first conductivity type having first and second main surfacesa second semiconductor layer of a second conductivity type provided over the first main surface of said first semiconductor layer;

    a third semiconductor layer of the second conductivity type provided in close contact on a surface of said second semiconductor layer and having an impurity concentration higher than the impurity concentration of said second semiconductor layer;

    a fourth semiconductor layer of the first conductivity type provided in close contact on a surface of said third semiconductor layer;

    a fifth semiconductor layer of the second conductivity type selectively provided in a surface of said fourth semiconductor layer;

    a trench having an opening in a surface of said fifth semiconductor layer and having a depth extending through at least said fourth semiconductor layer from the surface of said fifth semiconductor layer;

    an insulating film provided on an inner entire wall of said trench;

    a control electrode provided in said trench to face said fourth semiconductor layer through said insulating film;

    a first main electrode provided on the surface of said fourth and fifth semiconductor layers; and

    a second main electrode provided on the second main surface of said first semiconductor layer, wherein said second semiconductor layer is thicker than said third semiconductor layer.

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