Method for programming an analog/multi-level flash EEPROM

• US 6,040,993 A
• Filed: 02/23/1998
• Issued: 03/21/2000
• Est. Priority Date: 02/23/1998
• Status: Expired due to Term

• Current Assignee: Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Chen, Chia-Hsing, Wang, Mam-Tsung
• Primary Examiner(s): LE, VU ANH
• Application Number:
  US09/028,229
• Time in Patent Office: 757 Days
• Field of Search: 365/185.03, 365/185.19, 365/185.22, 365/185.24
• US Class Current: 365/185.03
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 16/3486 Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
• CPC Class Codes: G11C 2211/5642 Multilevel memory with buffers, latches, registers at input or output
• CPC Class Codes: G11C 27/005 with non-volatile charge storage, e.g. on floating gate or MNOS

Abstract

A method for programming an analog/multi-level flash memory array, which insures fast programming to substantially all of the cells in the array, without over-programming, is based on providing a pattern of program retry pulses which have respective pulse widths and pulse heights which vary according to a pattern. The pattern includes three stages which program and verify cell threshold voltages with different program verification margins so that an accurate cell threshold voltage can be achieved for each cell.

Claims

1. A method for programming a multi-level floating gate memory cell, comprising the steps of:

searching a program data-line voltage of the cell and ascertaining that said program data-line voltage is less than a first program verification margin for each data-line of the cell by using a first number of program pulse shots having a first pulse width and a second number of program pulse shots having a second pulse width and recording the program data-line voltage of the cell;

using the recorded program data-line voltage for each bit-line and page programming the cell using a third number of program pulse shots having a third pulse width until the cell has less than a second program verification margin;

determining whether the cell is programmed within the second program verification margin; and

if not

iteratively applying another program retry pulse to the cell and determining whether the cell is programmed, until the cell is programmed within the second program verification margin or a maximum number, M, of retries is made;

using the recorded data-line voltage for each bit-line and page programming the cell using a fourth number of program pulses having a fourth pulse width until the cell has less than a third program verification margin;

determining whether the cell is programmed within the third program verification margin; and

if not

iteratively applying another program retry pulse to the cell and determining whether the cell is programmed, until the cell is programmed within the third program verification margin or a maximum number, N, of retries is made.

2. The method of claim 1, wherein the cell has a number of multi-level including two and greater than two.

3. The method of claim 1, wherein the first program verification margin is 600 mV.

4. The method of claim 1, wherein the first pulse width is 100 μ

s.

5. The method of claim 1, wherein the first number of shots is 10.

6. The method of claim 1, wherein the second pulse width is 1 ms.

7. The method of claim 1, wherein the second number of shots is 10.

8. The method of claim 1, wherein the third pulse width is 100 μ

s.

9. The method of claim 1, wherein the second program verification margin is 60 mV.

10. The method of claim 1, wherein M is 10.

11. The method of claim 1, wherein the fourth pulse width is 10 μ

s.

12. The method of claim 1, wherein the third program verification margin is 6 mV.

13. The method of claim 1, wherein N is 10.

14. The method of claim 1, wherein the first program verification margin is greater than the second program verification margin and the third program verification margin.

15. The method of claim 1, wherein the second program verification margin is greater than the third program verification margin.

16. The method of claim 1, wherein the cell has a control gate, a source and a drain, and the program pulses are generated by supplying a negative voltage to the control gate and a variable voltage to the drain, such that Fowler-Nordheim tunneling is induced to discharge the cell.

17. An apparatus having program circuits, coupled to a memory array, supply circuits and a plurality of bit latches for programming a cell on a selected word-line and on bit-lines coupled to a bit latch storing a program value, said apparatus comprising the following circuitry:

an analog data-line voltage record circuitry for each bit-line decoder and bit-latch;

a pulse width control means;

a program verification voltage regulating means for each program stage.

18. The apparatus of claim 17, wherein the program circuits have circuitry to program a multi-level floating gate memory cell, and to perform the steps of:

searching a program data-line voltage of the cell and ascertaining that said program data-line voltage is less than a first program verification margin for each data-line of the cell by using a first number of program pulse shots having a first pulse width and a second number of program pulse shots having a second pulse width and recording the program data-line voltage of the cell;

using the recorded program data-line voltage for each bit-line and page programming the cell using a third number of program pulse shots having a third pulse width until the cell has less than a second program verification margin;

determining whether the cell is programmed within the second program verification margin; and

if not

iteratively applying another program retry pulse to the cell and determining whether the cell is programmed, until the cell is programmed within the second program verification margin or a maximum number, M, of retries is made;

using the recorded data-line voltage for each bit-line and page programming the cell using a fourth number of program pulses having a fourth pulse width until the cell has less than a third program verification margin;

determining whether the cell is programmed within the third program verification margin; and

if not

iteratively applying another program retry pulse to the cell and determining whether the cell is programmed, until the cell is programmed within the third program verification margin or a maximum number, N, of retries is made.

19. The apparatus of claim 18, wherein the number for multi-level means two or more.

20. The apparatus of claim 18, wherein the first program verification margin is 600 mV.

21. The apparatus of claim 18, wherein the first pulse width is 100 μ

s.

22. The apparatus of claim 18, wherein the first number of shots is 10.

23. The apparatus of claim 18, wherein the second pulse width is 1 ms.

24. The apparatus of claim 18, wherein the second number of shots is 10.

25. The apparatus of claim 18, wherein the third pulse width is 100 μ

s.

26. The apparatus of claim 18, wherein the second program verification margin is 60 mV.

27. The apparatus of claim 18, wherein M is 10.

28. The apparatus of claim 18, wherein the fourth pulse width is 10 μ

s.

29. The apparatus of claim 18, wherein the third program verification margin is 6 mV.

30. The apparatus of claim 18, wherein N is 10.

31. The apparatus of claim 18, wherein the first program verification margin is greater than the second program verification margin and the third program verification margin.

32. The apparatus of claim 18, wherein the second program verification margin is greater than the third program verification margin.

33. The apparatus of claim 18, wherein the floating gate cell has a control gate, a source and a drain, and the program pulses are generated by supplying a negative voltage to the control gate and a variable voltage to the drain, such that Fowler-Nordheim tunneling is induced to discharge the floating gate cell.