Plasma processing apparatus protected from discharges in association with secondary potentials

• US 6,041,733 A
• Filed: 10/24/1997
• Issued: 03/28/2000
• Est. Priority Date: 10/24/1996
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Jin-ho, Kim, Chang-sik, Kim, Ju-ho, Choi, Byung-mook, Moon, Kyeong-seob, Seo, Young-ho, Lim, Tae-hyung
• Primary Examiner(s): Lacey, David
• Assistant Examiner(s): BECKER, DREW E
• Application Number:
  US08/957,054
• Time in Patent Office: 886 Days
• Field of Search: 156/345, 204/298.34, 204/298.31, 204/298.06, 204/298.02, 118/723 E
• US Class Current: 118/723.00E
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A plasma processing apparatus such as a plasma etching apparatus, which is not subject to arcing to the gas distributor plate which is caused by secondary potentials generated by polymers adhering to a gas distribution plate. The gas distribution plate is electrically isolated from the ground electric potential, and does not have any polarity. The gas distribution plate may be formed of an insulating material. Furthermore, a support plate may be adapted to fix the gas distribution plate to a chamber of the apparatus in such a manner that the gas distribution plate is detachably coupled with the support plate. Thereby, it is easier to separate the gas distribution plate from the apparatus to remove the accumulated polymers during the plasma process.

Claims

1. A plasma processing apparatus comprising:

a vessel having surfaces defining a vacuum chamber;

a gas inlet and a gas outlet communicating with the vacuum chamber;

a first electrode communicating with the vacuum chamber;

a second electrode communicating with the vacuum chamber and spaced apart from the first electrode;

a workpiece support for supporting a workpiece between the first and second electrodes;

a perforated flat gas distributor disposed between the first and second electrodes; and

an insulating support member disposed at an inner wall of said chamber and coupled to said gas distributor, for supporting said gas distributor.

2. The plasma processing apparatus of claim 1, wherein the first electrode is a cathode.

3. The plasma processing apparatus of claim 2, wherein the cathode is connected to a DC (Direct Current) power supply.

4. The plasma processing apparatus of claim 2, wherein the cathode is connected to an RF (Radio Frequency) power supply.

5. The plasma processing apparatus of claim 1, wherein the second electrode is connected to a ground potential.

6. The plasma processing apparatus of claim 1, wherein the gas distribution plate includes a plurality of gas nozzles.

7. The plasma processing apparatus of claim 1, wherein the insulating support member further comprises a plasma-resistant material.

8. The plasma processing apparatus of claim 1, wherein the workpiece is a semiconductor substrate.

9. The plasma processing apparatus of claim 1 wherein the plasma processing apparatus is a chemical vapor deposition apparatus.

10. The plasma processing apparatus of claim 1 wherein the second electrode comprises at least a portion of the vessel.

11. The plasma processing apparatus of claim 10 wherein the second electrode comprises an upper inner surface of the vacuum chamber.

12. The plasma processing apparatus of claim 11 wherein the upper inner surface of the vacuum chamber comprises a removeable lid.

13. The plasma processing apparatus of claim 1 wherein the workpiece support comprises a surface of the first electrode.

14. The plasma processing apparatus of claim 1 wherein the gas distributor plate comprises an insulative outer layer.

15. The plasma processing apparatus of claim 1 wherein the insulating support member is interposed between the gas distributor and the second electrode.

16. A plasma processing apparatus comprising:

a vessel having surfaces defining a vacuum chamber;

a gas inlet and a gas outlet communicating with the vacuum chamber;

a first electrode communicating with the vacuum chamber;

a second electrode communicating with the vacuum chamber and spaced apart from the first electrode;

a workpiece support for supporting a workpiece between the first and second electrodes;

a gas distributor assembly comprising an insulating support member, and a perforated flat gas distributor plate mounted to the insulating support member and disposed between the first and second electrodes; and

the insulating support member disposed at an inner wall of said chamber and coupled to said gas distributor, for supporting said gas distributor.

17. A plasma processing apparatus comprising:

a vacuum chamber;

a gas inletting device for introducing a reactive gas into the chamber;

a first electrode disposed in the chamber and including a surface for supporting a workpiece;

a second electrode disposed in the chamber and opposed to the first electrode;

a gas distributor assembly including an insulating support plate fixed to the chamber, and a perforated flat gas distributor detachably mounted on the insulating support plate and disposed between the first and the second electrodes;

a gas exhausting device for discharging the reactive gas out of the chamber, and

the insulating support plate disposed at an inner wall of said chamber and coupled to said gas distributor, for supporting said gas distributor plate.

18. The plasma processing apparatus of claim 17 wherein the gas distribution plate comprises an insulating material.

19. The plasma processing apparatus of claim 18, wherein the gas distribution plate comprises a material is selected from the group consisting of SiC, SiO2, and quartz.

20. The plasma processing apparatus of claim 17, wherein the insulating support plate comprises a soft-anodized aluminum material.

21. The plasma processing apparatus of claim 17, wherein the gas distributor is coupled with the insulting support plate by screws.